N-Ch P-Ch
VDSS 20V -20V
RDS(on) 0.029Ω 0.058Ω
N-Channel P-Channel
Drain-Source Voltage VDS 20 -20
Gate-Source Voltage VGS ± 12
TA = 25°C 6.6 -5.3
TA = 70°C 5.3 -4.3
Pulsed Drain Current IDM 26 -21
Continuous Source Current (Diode Conduction) I
S2.5 -2.5
TA = 25°C 2.0
TA = 70°C 1.3
Single Pulse Avalanche Energy EAS 100 150 mJ
Avalanche Current IAR 4.1 -2.9 A
Repetitive Avalanche Energy EAR 0.20 mJ
Peak Diode Recovery dv/dt dv/dt 5.0 -5.0 V/ ns
Junction and Storage Temperature Range TJ, TSTG -55 to + 150 °C
HEXFET® Power MOSFET
PD - 95296
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
5/25/04
SO-8
lGeneration V Technology
lUltra Low On-Resistance
lDual N and P Channel MOSFET
lSurface Mount
lFully Avalanche Rated
IRF7317PbF
Description
Thermal Resistance Ratings
Parameter Symbol Limit Units
Maximum Junction-to-Ambient RθJA 62.5 °C/W
Continuous Drain Current
Maximum Power Dissipation
A
W
Symbol Maximum Units
D1
N-CHANNEL MOSFET
P-CHANNEL MOSFET
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
45
6
7
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
lLead-Free
IRF7317PbF
Surface mounted on FR-4 board, t ≤ 10sec.
Parameter Min. Typ. Max. Units Conditions
N-Ch 20 VGS = 0V, ID = 250µA
P-Ch -20 VGS = 0V, ID = -250µA
N-Ch 0.027 Reference to 25°C, ID = 1mA
P-Ch 0.031 Reference to 25°C, ID = -1mA
0.023 0.029 VGS = 4.5V, ID = 6.0A
0.030 0.046 VGS = 2.7V, ID = 5.2A
0.049 0.058 VGS = -4.5V, ID = -2.9A
0.082 0.098 VGS = -2.7V, ID = -1.5A
N-Ch 0.7 VDS = VGS, ID = 250µA
P-Ch -0.7 VDS = VGS, ID = -250µA
N-Ch 20 VDS = 10V, ID = 6.0A
P-Ch 5.9 VDS = -10V, ID = -1.5A
N-Ch 1.0 VDS = 16V, VGS = 0V
P-Ch -1.0 VDS = -16V, VGS = 0V
N-Ch 5.0 VDS = 16V, VGS = 0V, TJ = 55°C
P-Ch -25 VDS = -16V, VGS = 0V, TJ = 55°C
IGSS Gate-to-Source Forward Leakage N-P ±100 VGS = ±12V
N-Ch 18 27
P-Ch 19 29
N-Ch 2.2 3.3
P-Ch 4.0 6.1
N-Ch 6.2 9.3
P-Ch 7.7 12
N-Ch 8.1 12
P-Ch 15 22
N-Ch 17 25
P-Ch 40 60
N-Ch 38 57
P-Ch 42 63
N-Ch 31 47
P-Ch 49 73
N-Ch 900
P-Ch 780
N-Ch 430 pF
P-Ch 470
N-Ch 200
P-Ch 240
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient
RDS(ON) Static Drain-to-Source On-Resistance
VGS(th) Gate Threshold Voltage
gfs Forward Transconductance
IDSS Drain-to-Source Leakage Current
QgTotal Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
td(on) Turn-On Delay Time
trRise Time
td(off) Turn-Off Delay Time
tfFall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V
V/°C
Ω
V
S
µA
nC
ns
N-Channel
ID = 6.0A, VDS = 10V, VGS = 4.5V
P-Channel
ID = -2.9A, VDS = -16V, VGS = -4.5V
N-Channel
VDD = 10V, ID = 1.0A, RG = 6.0Ω,
RD = 10Ω
P-Channel
VDD = -10V, ID = -2.9A, RG = 6.0Ω,
RD = 3.4Ω
N-Channel
VGS = 0V, VDS = 15V, = 1.0MHz
P-Channel
VGS = 0V, VDS = -15V, = 1.0MHz
N-Ch
P-Ch
Parameter Min. Typ. Max. Units Conditions
N-Ch 2.5
P-Ch -2.5
N-Ch 26
P-Ch -21
N-Ch 0.72 1.0 TJ = 25°C, IS = 1.7A, VGS = 0V
P-Ch -0.78 -1.0 TJ = 25°C, IS = -2.9A, VGS = 0V
N-Ch 52 77
P-Ch 47 71
N-Ch 58 86
P-Ch 49 73
Source-Drain Ratings and Characteristics
ISContinuous Source Current (Body Diode)
ISM Pulsed Source Current (Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
A
V
ns
nC
N-Channel
TJ = 25°C, IF =1.7A, di/dt = 100A/µs
P-Channel
TJ = 25°C, IF = -2.9A, di/dt = 100A/µs
N-Channel ISD ≤ 4.1A, di/dt ≤ 92A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel ISD ≤ -2.9A, di/dt ≤ -77A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 22 )
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
N-Channel Starting TJ = 25°C, L = 12mH RG = 25Ω, IAS = 4.1A. (See Figure 12)
P-Channel Starting TJ = 25°C, L = 35mH RG = 25Ω, IAS = -2.9A.
nA
IRF7317PbF
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Typical Source-Drain Diode
Forward Voltage
N-Channel
1
10
100
0.1 1 10
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
7.50V
4.50V
4.00V
3.50V
3.00V
2.70V
2.00V
1.50V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
1.50V
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4 1.6
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
1
10
100
0.1 1 10
20µs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
7.50V
4.50V
4.00V
3.50V
3.00V
2.70V
2.00V
1.50V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
1.50V
1
10
100
1.5 2.0 2.5 3.0
V = 10V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
IRF7317PbF
Fig 5. Normalized On-Resistance
Vs. Temperature
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 7. Typical On-Resistance Vs. Gate
Voltage
N-Channel
RDS (on) , Drain-to-Source On Resistance (Ω)
RDS (on) , Drain-to-Source On Resistance (Ω)
25 50 75 100 125 150
0
50
100
150
200
250
300
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
1.8A
3.3A
4.1A
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
4.5V
6.0A
0.01
0.02
0.03
0.04
0.05
02468
A
GS
V , Gate-to-Source Voltage (V)
I = 6.6A
D
0.020
0.024
0.028
0.032
0 102030
A
I , Drain Current (A)
D
V = 4.5V
GS
V = 2.7V
GS
IRF7317PbF
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
N-Channel
0
400
800
1200
1600
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0 5 10 15 20 25 30
0
2
4
6
8
10
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D6.0A
V = 10V
DS
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF7317PbF
Fig 14. Typical Transfer Characteristics
Fig 13. Typical Output Characteristics
Fig 12. Typical Output Characteristics
Fig 15. Typical Source-Drain Diode
Forward Voltage
P-Channel
1
10
100
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V = -10V
20µs PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
0.1
1
10
100
0.1 1 10
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
-7.50V
-4.50V
-4.00V
-3.50V
-3.00V
-2.70V
-2.00V
-1.50V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-1.50V
0.1
1
10
100
0.1 1 10
20µs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
-7.50V
-4.50V
-4.00V
-3.50V
-3.00V
-2.70V
-2.00V
-1.50V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-1.50V
IRF7317PbF
Fig 16. Normalized On-Resistance
Vs. Temperature
Fig 19. Maximum Avalanche Energy
Vs. Drain Current
Fig 17. Typical On-Resistance Vs. Drain
Current
Fig 18. Typical On-Resistance Vs. Gate
Voltage
P-Channel
RDS(on) , Drain-to-Source On Resistance ( Ω )
RDS(on) , Drain-to-Source On Resistance ( Ω )
-ID , Drain Current (A)
25 50 75 100 125 150
0
100
200
300
400
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
-1.3A
-2.3A
-2.9A
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
A
I = -2.9A
V = -4.5V
D
GS
0.0
0.2
0.4
0.6
0.8
0 4 8 121620
A
-I , Drain Current (A)
D
V = -4.5V
GS
V = -2.7V
GS
0.03
0.04
0.05
0.06
0.07
0.08
0.0 2.0 4.0 6.0 8.0
A
GS
V , Gate-to-Source Voltage (V)
I = -5.3A
D
IRF7317PbF
Fig 21. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 20. Typical Capacitance Vs.
Drain-to-Source Voltage
P-Channel
Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
-
0
200
400
600
800
1000
1200
1400
1 10 100
C, Capacitance (pF)
A
DS
-V , Drain-to-Source Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
2
4
6
8
10
0 5 10 15 20 25 30
G
GS
A
-V , Gate-to-Source Voltage (V)
Q , Total Gate Charge (nC)
I = -2.9A
V = -16V
D
DS
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF7317PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BASIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 B ASI C
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX
MILLIMETERSINCHES
MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BASIC 0.635 BAS IC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L 8X c
y
0.25 [.010] C A B
e1
A
A1
8X b
C
0.10 [.004]
4312
F OOT PR I NT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OU T L INE CONF OR MS T O JE DE C OU T L I NE MS -012 AA.
NOT ES :
1. DIMENS IONING & TOLE RANCING PER AS ME Y14.5M-1994.
2. CONTROLLING DIMENS ION: MIL LIMET ER
3. DIMENS IONS ARE S HOWN IN MILLIMETE RS [INCHES ].
5 DIME NSION DOES NOT INCLUDE MOLD PROTRUS IONS .
6 DIME NSION DOES NOT INCLUDE MOLD PROTRUS IONS .
MOL D PROT RUS IONS NOT TO E XCEED 0.25 [.010].
7 DIMENSION IS T HE LENGTH OF LEAD FOR S OLDERING T O
A SUBS T RATE .
MOL D PROT RUS IONS NOT TO E XCEED 0.15 [.006].
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
DAT E CODE (YWW)
XXXX
INT ERNATIONAL
RECT IFIER
LOGO
F 7101
Y = LAS T DIGIT OF T HE YE AR
PART NUMBER
LOT CODE
WW = WE E K
EXAMPLE: T HIS IS AN IRF7101 (MOSFE T )
P = DE S IGNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
A = AS S E MB L Y S IT E CODE
IRF7317PbF
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/04
