IPI50N10S3L-16 - Infineon Technologies

IPB50N10S3L-16

IPI50N10S3L-16, IPP50N10S3L-16

OptiMOS®-T Power-Transistor

Features

• N-channel - Enhancement mode

• Automotive AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green product (RoHS compliant)

• 100% Avalanche tested

Maximum ratings, at Tj=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current IDTC=25 °C, VGS=10 V 50 A

TC=100 °C,

VGS=10 V1) 37

Pulsed drain current1) ID,pulse TC=25 °C 200

Avalanche energy, single pulse1) EAS ID=25A 330 mJ

Avalanche current, single pulse IAS 50 A

Gate source voltage2) VGS ±20 V

Power dissipation Ptot TC=25 °C 100 W

Operating and storage temperature Tj, Tstg -55 ... +175 °C

IEC climatic category; DIN IEC 68-1 55/175/56

Value

VDS 100 V

RDS(on),max (SMD version) 15.4 mΩ

ID50 A

Product Summary

PG-TO220-3-1PG-TO262-3-1PG-TO263-3-2

Type Package Marking

IPB50N10S3L-16 PG-TO263-3-2 3N10L16

IPI50N10S3L-16 PG-TO262-3-1 3N10L16

IPP50N10S3L-16 PG-TO220-3-1 3N10L16

Rev. 1.1 page 1 2008-04-09

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IPB50N10S3L-16

IPI50N10S3L-16, IPP50N10S3L-16

Parameter Symbol Conditions Unit

min. typ. max.

Thermal characteristics1)

Thermal resistance, junction - case RthJC - - 1.5 K/W

Thermal resistance, junction -

ambient, leaded RthJA --62

SMD version, device on PCB RthJA minimal footprint - - 62

6 cm2 cooling area3) --40

Electrical characteristics, at Tj=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID= 1 mA 100 - - V

Gate threshold voltage VGS(th) VDS=VGS, ID=60µA 1.2 1.7 2.4

Zero gate voltage drain current IDSS

VDS=80 V, VGS=0 V,

Tj=25 °C - 0.01 1 µA

VDS=80 V, VGS=0 V,

Tj=125 °C2) - 1 100

Gate-source leakage current IGSS VGS=16V, VDS=0V - - 100 nA

Drain-source on-state resistance RDS(on) VGS=4.5V, ID=50A - 16.1 20.9 mΩ

VGS=4.5V, ID=50A,

SMD version - 15.8 20.6

VGS=10 V, ID=50 A - 13.1 15.7

VGS=10 V, ID=50 A,

SMD version - 12.8 15.4

Values

Rev. 1.1 page 2 2008-04-09

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IPB50N10S3L-16

IPI50N10S3L-16, IPP50N10S3L-16

Parameter Symbol Conditions Unit

min. typ. max.

namic characteristics1)

Input capacitance Ciss - 3215 4180 pF

Output capacitance Coss - 730 949

Reverse transfer capacitance Crss -6395

Turn-on delay time td(on) -10-ns

Rise time tr-5-

Turn-off delay time td(off) -28-

Fall time tf-5-

Gate Char

e Characteristics1)

Gate to source charge Qgs - 9 12 nC

Gate to drain charge Qgd -812

Gate charge total Qg-4964

Gate plateau voltage Vplateau - 3.7 - V

Reverse Diode

Diode continous forward current1) IS- - 50 A

Diode pulse current1) IS,pulse - - 200

Diode forward voltage VSD

VGS=0 V, IF=50 A,

Tj=25 °C 0.6 1 1.2 V

Reverse recovery time1) trr

VR=50V, IF=IS,

diF/dt=100A/µs -80-ns

Reverse recovery charge1) Qrr - 185 - nC

TC=25°C

Values

VGS=0V, VDS=25V,

f=1MHz

VDD=20 V, VGS=10 V,

ID=50 A, RG=3.5 Ω

VDD=80 V, ID=70 A,

VGS=0 to 10 V

1) Defined by design. Not subject to production test.

3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

2) Qualified with VGS = +20/-5V.

Rev. 1.1 page 3 2008-04-09

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IPB50N10S3L-16

IPI50N10S3L-16, IPP50N10S3L-16

1 Power dissipation 2 Drain current

Ptot = f(TC); VGS ≥ 6 V ID = f(TC); VGS ≥ 6 V; SMD

3 Safe operating area 4 Max. transient thermal impedance

ID = f(VDS); TC = 25 °C; D = 0; SMD ZthJC = f(tp)

parameter: tpparameter: D=tp/T

1 µs

10 µs

100 µs

1 ms

100

1000

0.1 1 10 100

VDS [V]

ID [A]

single pulse

0.01

0.05

0.1

0.5

100

10-1

10-2

10-3

10-4

10-5

10-6

101

100

10-1

10-2

10-3

tp [s]

ZthJC [K/W]

100

120

0 50 100 150 200

TC [°C]

Ptot [W]

0 50 100 150 200

TC [°C]

ID [A]

Rev. 1.1 page 4 2008-04-09

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IPB50N10S3L-16

IPI50N10S3L-16, IPP50N10S3L-16

5 Typ. output characteristics 6 Typ. drain-source on-state resistance

ID = f(VDS); Tj = 25 °C; SMD RDS(on) = f(ID); Tj = 25 °C; SMD

parameter: VGS parameter: VGS

7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance

ID = f(VGS); VDS = 6V RDS(on) = f(Tj); ID = 50 A; VGS = 10 V; SMD

parameter: Tj

-60 -20 20 60 100 140 180

Tj [°C]

RDS(on) [mΩ]

3 V

3.5 V

4 V

4.5 V

5 V

10 V

100

120

140

160

180

200

012345

VDS [V]

ID [A]

3 V 3.5 V 4 V

4.5 V

5 V

10 V

0 20406080100

ID [A]

RDS(on) [mΩ]

-55 °C

25 °C

175 °C

100

150

12345

VGS [V]

ID [A]

Rev. 1.1 page 5 2008-04-09

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IPB50N10S3L-16

IPI50N10S3L-16, IPP50N10S3L-16

9 Typ. gate threshold voltage 10 Typ. capacitances

VGS(th) = f(Tj); VGS = VDS C = f(VDS); VGS = 0 V; f = 1 MHz

parameter: ID

11 Typical forward diode characteristicis 12 Typ. avalanche characteristics

IF = f(VSD)IA S= f(tAV)

parameter: Tjparameter: Tj(start)

103

102

101

100

0 0.2 0.4 0.6 0.8 1 1.2 1.4

VSD [V]

IF [A]

60 µA

300 µA

0.5

1.5

2.5

-60 -20 20 60 100 140 180

Tj [°C]

VGS(th) [V]

Ciss

Coss

Crss

102

103

104

0 5 10 15 20 25 30

VDS [V]

C [pF]

101

25 °C

100 °C

150 °C

0.1

100

0.1 1 10 100 1000

tAV [µs]

IAV [A]

25 °C

175 °C

103

102

101

100

0 0.2 0.4 0.6 0.8 1 1.2 1.4

VSD [V]

IF [A]

Rev. 1.1 page 6 2008-04-09

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IPB50N10S3L-16

IPI50N10S3L-16, IPP50N10S3L-16

13 Typical avalanche energy 14 Typ. drain-source breakdown voltage

EAS = f(Tj)VBR(DSS) = f(Tj); ID = 1 mA

parameter: ID

15 Typ. gate charge 16 Gate charge waveforms

VGS = f(Qgate); ID = 50 A pulsed

parameter: VDD

gate

gs(th)

g(th)

100

105

110

115

-55 -15 25 65 105 145

Tj [°C]

VBR(DSS) [V]

20 V 80 V

0 10203040

Qgate [nC]

VGS [V]

50 A

25 A

12.5 A

100

200

300

400

500

600

25 75 125 175

Tj [°C]

EAS [mJ]

Rev. 1.1 page 7 2008-04-09

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IPB50N10S3L-16

IPI50N10S3L-16, IPP50N10S3L-16

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaime

The information given in this document shall in no event be regarded as a guarantee of conditions

or characteristics. With respect to any examples or hints given herein,

any typical values stated herein and/or any information regarding the application of the device,

Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including

without limitation warranties of non‑infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices please

contact your nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements components may contain dangerous substances. For information

on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the

express written approval of Infineon Technologies, if a failure of such components can reasonably

be expected to cause the failure of that life-support device or system, or to affect the safety or

effectiveness of that device or system. Life support devices or systems are intended to be

implanted in the human body, or to support and/or maintain and sustain and/or protect human life.

If they fail, it is reasonable to assume that the health of the user or other persons may be

endangered.

Rev. 1.1 page 8 2008-04-09

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IPB50N10S3L-16

IPI50N10S3L-16, IPP50N10S3L-16

Revision History

Version

1.1

Date

08.04.2008

09.04.2008

Changes

Page 1: VGS changed from ±16V

to ±20V

Page 3: Footnote 2) added

Page 1: EAS changed from 264mJ

to 330mJ

Rev. 1.1 page 9 2008-04-09

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