APT20M34BLL APT20M34SLL 200V 74A 0.034 POWER MOS 7 R MOSFET BLL D3PAK (R) Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg VDSS SLL D * Increased Power Dissipation * Easier To Drive * TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS Symbol TO-247 G S All Ratings: TC = 25C unless otherwise specified. Parameter APT20M34BLL_SLL UNIT 200 Volts Drain-Source Voltage ID Continuous Drain Current @ TC = 25C IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 VGSM Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 403 Watts Linear Derating Factor 3.23 W/C PD TJ,TSTG 1 Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy 1 Amps 296 TL EAS 74 -55 to 150 C 300 Amps 74 (Repetitive and Non-Repetitive) 1 Single Pulse Avalanche Energy Volts 30 4 mJ 1300 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) 200 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 37A) TYP MAX Volts 0.034 Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 160V, VGS = 0V, TC = 125C) 500 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) Ohms A 100 nA 5 Volts 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 9-2004 Characteristic / Test Conditions 050-7008 Rev B Symbol DYNAMIC CHARACTERISTICS Symbol APT20M34BLL_SLL Test Conditions Characteristic MIN TYP C iss Input Capacitance Coss Output Capacitance VDS = 25V 1170 Reverse Transfer Capacitance f = 1 MHz 60 VGS = 10V 60 VDD = 100V 23 Crss Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) ID = 74A @ 25C tr td(off) tf 27 VDD = 100V RG = 0.6 Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 6 6 ns 25 ID = 74A @ 25C Turn-off Delay Time nC 10 VGS = 15V Rise Time pF 26 RESISTIVE SWITCHING Turn-on Delay Time UNIT 3660 VGS = 0V 3 MAX 4 INDUCTIVE SWITCHING @ 25C 505 VDD = 133V, VGS = 15V ID = 74A, RG = 5 395 INDUCTIVE SWITCHING @ 125C 640 VDD = 133V VGS = 15V J 425 ID = 74A, RG = 5 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS MIN Characteristic / Test Conditions TYP 74 Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -74A, dl S/dt = 100A/s) 160 Q Reverse Recovery Charge (IS = -74A, dl S/dt = 100A/s) 1.3 rr dv/ dt Peak Diode Recovery dv/ 296 (Body Diode) (VGS = 0V, IS = -74A) dt MAX 1.3 5 UNIT Amps Volts ns C 5 V/ns MAX UNIT THERMAL CHARACTERISTICS Symbol MIN Characteristic RJC Junction to Case RJA Junction to Ambient 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 TYP 0.31 40 4 Starting Tj = +25C, L = 0.470mH, RG = 25, Peak IL = 74A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID74A di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.9 0.25 0.7 0.20 0.5 0.15 0.3 0.10 t1 t2 Duty Factor D = t1/t2 0.05 0 Note: PDM Z JC, THERMAL IMPEDANCE (C/W) 050-7008 Rev B 9-2004 0.35 0.30 0.1 0.05 10-5 C/W Peak TJ = PDM x ZJC + TC SINGLE PULSE 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves APT20M34BLL_SLL RC MODEL Junction temp. (C) 0.131 0.00789F Power (watts) 0.180 0.161F ID, DRAIN CURRENT (AMPERES) 160 VGS=10 &15V 140 6.5V 120 6V 100 80 5.5V 60 5V 40 4.5V 20 4V Case temperature. (C) 0 VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE 100 80 60 TJ = +25C 40 TJ = +125C TJ = -55C 20 0 0 2 4 6 8 10 12 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 70 1.2 VGS=10V 1.1 1.0 0.9 0.8 VGS=20V 0 60 50 40 30 20 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE D = 10V 2.0 1.5 1.0 0.5 0.0 -50 1.05 1.00 0.95 0.90 -50 = 37A GS -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) I 1.10 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 2.5 V 20 40 60 80 100 120 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.1 1.0 0.9 0.8 9-2004 ID, DRAIN CURRENT (AMPERES) GS 1.3 1.15 80 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) NORMALIZED TO V = 10V @ 37A 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-7008 Rev B ID, DRAIN CURRENT (AMPERES) 120 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.4 297 10,000 Ciss 100S 10 1 1mS C, CAPACITANCE (pF) 100 16 = 74A 12 VDS=40V VDS=100V 8 VDS=160V 4 0 0 Crss 10 1 10 100 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA D 100 10mS TC =+25C TJ =+150C SINGLE PULSE I Coss 1,000 10 20 30 40 50 60 70 80 90 100 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) OPERATION HERE LIMITED BY RDS (ON) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) APT20M34BLL_SLL 20,000 50 200 100 TJ =+150C TJ =+25C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 120 V DD td(off) R DD R G = 5 T = 125C J L = 100H 20 tf 60 tr 40 td(on) 20 30 0 10 70 90 110 130 ID (A) FIGURE 14, DELAY TIMES vs CURRENT 50 70 90 110 130 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 1200 DD R G 1000 J Eon E ON includes diode reverse recovery. 600 400 Eoff 800 Eon 600 V 400 I 30 50 70 90 110 130 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 0 DD D = 133V = 74A T = 125C J 200 200 0 10 Eoff = 5 T = 125C L = 100H 800 50 = 133V SWITCHING ENERGY (J) 1000 30 1200 V SWITCHING ENERGY (J) J 80 = 133V tr and tf (ns) td(on) and td(off) (ns) 30 0 10 9-2004 T = 125C L = 100H V 10 050-7008 Rev B G 100 40 = 133V = 5 L = 100H E ON includes diode reverse recovery. 0 5 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE Typical Performance Curves APT20M34BLL_SLL 90% Gate Voltage 10% Gate Voltage T 125C J td(on) tf Drain Current tr Drain Voltage 90% 90% 5% TJ125C td(off) 10% 0 5% 10% Drain Voltage Switching Energy Drain Current Switching Energy Figure 19, Turn-off Switching Waveforms and Definitions Figure 18, Turn-on Switching Waveforms and Definitions APT60S20 ID V DD V DS G D.U.T. Figure 20, Inductive Switching Test Circuit 3 TO-247 Package Outline 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) Drain (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) D PAK Package Outline 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) Revised 4/18/95 Drain 20.80 (.819) 21.46 (.845) 1.04 (.041) 1.15 (.045) 13.79 (.543) 13.99 (.551) 13.41 (.528) 13.51 (.532) Revised 8/29/97 11.51 (.453) 11.61 (.457) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) Gate Drain 1.27 (.050) 1.40 (.055) 1.22 (.048) 1.32 (.052) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.} Source 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Source Drain Gate Dimensions in Millimeters (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 3.81 (.150) 4.06 (.160) (Base of Lead) Heat Sink (Drain) and Leads are Plated 050-7008 Rev B 0.46 (.018) 0.56 (.022) {3 Plcs} 2.87 (.113) 3.12 (.123) 9-2004 3.50 (.138) 3.81 (.150)