D44H11, D45H11
High Power Bipolar Transistors
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Designed for various specific and general purpose application such as; output and
driver stages of amplifiers operating at frequencies from DC to greater than 1 MHz;
series, shunt and switching regulators; low and high frequency inverters/converters
and many others
Features:
•Very low collector saturation voltage
•Excellent linearity
•Fast switching
•PNP values are negative, observe proper polarity
Dimensions : Millimetres
Dimensions Minimum Maximum
A 14.68 15.31
B 9.78 10.42
C 5.01 6.52
D 13.06 14.62
E 3.57 4.07
F 2.42 3.66
G 1.12 1.36
H 0.72 0.96
I 4.22 4.98
J 1.14 1.38
K 2.2 2.97
L 0.33 0.55
M 2.48 2.98
O 3.7 3.9
NPN PNP
D44H11 D45H11
10 Amperes
Complementary Silicon
Power Transistors
80 Volts
50 Watts
Characteristic Symbol D44H11
D45H11 Unit
Collector - emitter voltage VCEO 80 V
Collector - base voltage VCES
Emitter - base voltage VEBO 5
A
Collector current - continuous
- peak
IC
ICM
10
20
Base current IB2
Total power dissipation at TC= 25°C
derate above 25°C PD50
0.4
W
W/°C
Operating and storage junction temperature range TJ, TSTG -55 to +150 °C
Maximum Ratings
Characteristic Symbol Maximum Unit
Thermal resistance junction to case Rθjc 2.5 °C/W
Thermal Characteristics
Pin 1. Base
2. Collector
3. Emitter
4. Collector (Case)
TO-220
D44H11, D45H11
High Power Bipolar Transistors
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Characteristic Symbol Minimum Maximum Unit
OFF Characteristics
Collector - emitter sustaining voltage
(IC= 30 mA, IB= 0) VCEO (SUS) 80 - V
Collector - emitter cut off current
(VCE = 80 V, VBE = 0) ICES - 10
µA
Emitter - base cut off current
(VEB = 5 V, IC= 0) IEBO - 100
ON Characteristics (1)
DC current gain
(IC= 2 A, VCE = 1 V)
(IC= 4 A, VCE = 1 V)
hFE 60
40
- -
Collector - emitter saturation voltage
(IC= 8 A, IB= 400 mA) VCE (sat) - 1
V
Base - emitter saturation voltage
(IC= 8 A, IB= 800 mA) VBE (sat) - 1.5
Dynamic Characteristics
Current gain - bandwidth product (2) D44H11
(IC= 500 mA, VCE = 10 V, f = 0.5 MHz) D45H11 fT15
12 - MHz
Small - signal current gain D44H11
(VCB = 200 mA, IE= 10 V, f = 1 MHz) D45H11 Cob 220
400 - -
Switching Characteristics
Rise Time
IC= 5 A,
IB1 = -IB2 = 500 mA
D44H11
D45H11 tr-0.5
0.6 µs
Storage Time D44H11
D45H11 ts-1
1.2 µs
Fall Time D44H11
D45H11 tf-0.4
0.5 µs
Electrical Characteristics (TC= 25°C Unless Otherwise Noted)
Figure - 1 Power Derating
PD, Power Dissipation (Watts)
TC, Temperature (°C)
(1) Pulse Test : Pulse width =300 µs, duty cycle ≤2%
(2) fT= hfe• ftest
D44H11, D45H11
High Power Bipolar Transistors
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DC Current Gain
hFE, DC Current Gain
“ON” Voltages
“ON” Voltages
V, Voltage (Volts)
IC, Collector Current (Amperes)
IC, Collector Current (Amperes) IC, Collector Current (Amperes)
V, Voltage (Volts)
Forward Bias Safe Operating Area
IC, Collector Current (Amperes)
IC, Collector Current (Amperes)
Specification Table
Description
IC(av)
Maximum
(A)
VCEO
Maximum
(V)
hFE
Minimum at
at IC= 2 A
Ptot
at 25°C
(W)
Type Part Number
High Power Bipolar Transistor
10 80 60 50
NPN D44H11
High Power Bipolar Transistor PNP D45H11
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all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use
made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted.
Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising)
is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. © Premier Farnell plc 2011.
