PMEG3010EB,115 - NXP Semiconductors

1. Product profile

1.1 General description

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an

integrated guard ring for stress protection, encapsulated in a SOD523 ultra small and flat

lead Surface-Mounted Device (SMD) plastic package.

1.2 Features and benefits

Forward current: IF ≤ 1 A

Reverse voltage: VR ≤ 30 V

Very low forward voltage

AEC-Q101 qualified

Ultra small and flat lead SMD plastic

package

1.3 Applications

Low voltage rectification

High efficiency DC-to-DC conve rs i on

Switch mode power supply

Reverse polarity protection

Low power consumption applications

1.4 Quick reference data

2. Pinning information

[1] The marking bar indicates the cathode.

PMEG3010EB

1 A very low VF MEGA Schottky barrier rectifier

Rev. 2 — 15 March 2012 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

IFforward current Tsp ≤55°C --1A

VRreverse voltage - - 30 V

VFforward voltage IF= 1 A; pulsed; tp≤300 µs; δ≤0.02 ;

Tamb =25°C - 610 680 mV

Tabl e 2. Pinning info rmation

Pin Symbol Description Simplified outline Graphi c sy mbol

1 K cathode[1]

SOD523

2 A anode

sym001

Product data sheet Rev. 2 — 15 March 2012 2 of 9

NXP Semiconductors PMEG3010EB

1 A very low VF MEGA Schottky barrier rectifier

3. Ordering information

4. Marking

5. Limiting values

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

6. Thermal characteristics

[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a

significant part of the total power losses.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[3] Soldering point of cathode tab.

Table 3. Ordering information

Type number Package

Name Description Version

PMEG3010EB - plastic surface-mounted package; 2 leads SOD523

Table 4. Marking codes

Type number Marking code

PMEG3010EB KA

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VRreverse voltage - 30 V

IFforward current Tsp ≤55 °C - 1 A

IFRM repetitive peak forward current tp≤1 ms; δ≤0.25 - 3 A

IFSM non-repetitive peak forward

current tp=8ms; T

j(init) = 25 °C; square wave - 5 A

Ptot total power dissipation Tamb ≤25 °C [1] - 310 mW

Tjjunction temperature - 150 °C

Tamb ambient temperature -65 150 °C

Tstg storage temperature -65 150 °C

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance

from junction to

ambient

in free air [1][2] - - 400 K/W

Rth(j-sp) thermal resistance

from junction to solder

point

[3] --75K/W

Product data sheet Rev. 2 — 15 March 2012 3 of 9

NXP Semiconductors PMEG3010EB

1 A very low VF MEGA Schottky barrier rectifier

7. Characteristics

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

VFforward voltage IF= 0.1 mA; pulsed; tp≤300 µs;

δ≤0.02 ; Tamb =25°C - 90 180 mV

IF= 1 mA; pulsed; tp≤300 µs;

δ≤0.02 ; Tamb =25°C - 150 200 mV

IF= 10 mA; pulsed; tp≤300 µs;

δ≤0.02 ; Tamb =25°C - 210 270 mV

IF= 100 mA; pulsed; tp≤300 µs;

δ≤0.02 ; Tamb =25°C - 295 360 mV

IF= 500 mA; pulsed; tp≤300 µs;

δ≤0.02 ; Tamb =25°C - 430 500 mV

IF= 1 A; pulsed; tp≤300 µs; δ≤0.02 ;

Tamb =25°C - 610 680 mV

IRreverse current VR=10V; T

amb = 25 °C - 15 200 µA

VR=30V; T

amb = 25 °C - 70 500 µA

Cddiode capacitance VR= 1 V; f = 1 MHz; Tamb = 25 °C - 24 30 pF

(1) Tamb = 150 °C

(2) Tamb = 125 °C

(3) Tamb = 85 °C

(4) Tamb = 25 °C

(5) Tamb = −40 °C

(1) Tamb = 150 °C

(2) Tamb = 125 °C

(3) Tamb = 85 °C

(4) Tamb = 25 °C

(5) Tamb = −40 °C

Fig 1. Forward current as a function of forward

voltage; typical values Fig 2. Reverse current as a fu nction of reverse

voltage; typical values

006aaa855

103

102

104

(mA)

10−1

VF (V)

0 1.41.20.4 0.8 1.00.2 0.6

(1)

(2)

(3)

(4)

(5)

006aaa856

(μA)

10−2

10−1

104

103

102

105

10−3

VR (V)

0302551510 20

(1)

(2)

(3)

(4)

(5)

Product data sheet Rev. 2 — 15 March 2012 4 of 9

NXP Semiconductors PMEG3010EB

1 A very low VF MEGA Schottky barrier rectifier

8. Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualif ication for discrete semiconductors, and is

suitable for use in automotive applications.

f = 1 MHz; Tamb = 25 °C

Fig 3. Diode capacitance as a function of reverse voltage; typical values

006aaa857

VR (V)

0302010

(pF)

Fig 4. Duty cycle definition

tcy

006aac658

duty cycle δ =

tcy

Product data sheet Rev. 2 — 15 March 2012 5 of 9

NXP Semiconductors PMEG3010EB

1 A very low VF MEGA Schottky barrier rectifier

9. Package outline

10. Soldering

Fig 5. Package outline SOD523

02-12-13Dimensions in mm

1.65

1.55 1.25

1.15

0.17

0.11

0.34

0.26

0.65

0.58

0.85

0.75

Fig 6. Reflow soldering footprint for SOD523

solder lands

solder resist

occupied area

solder paste

Dimensions in mm

0.6

(2×)

0.5

(2×)

2.15

1.1

0.7

(2×)

0.8

(2×)

1.2

sod523_fr

Product data sheet Rev. 2 — 15 March 2012 6 of 9

NXP Semiconductors PMEG3010EB

1 A very low VF MEGA Schottky barrier rectifier

11. Revision history

Table 8. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PMEG3010EB v.2 20120315 Product data sheet - PMEG3010EB v.1

Modifications: • 1 “Product profile” updated

• 5 “Limiting values”:IFRM and IFSM values corrected

• 8 “Test inform ation” updated

PMEG3010EB v.1 20061201 Product data sheet - -

Product data sheet Rev. 2 — 15 March 2012 7 of 9

NXP Semiconductors PMEG3010EB

1 A very low VF MEGA Schottky barrier rectifier

12. Legal information

12.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The p r oduct status of device(s) described in this document may hav e changed sinc e this document was published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URLhttp://www.nxp.com.

12.2 Definitions

Preview — The document is a preview version only. The document is still

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with the same product type number(s) and tit le. A short data sh eet is intended

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risk.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Char acteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semico nductors makes no

representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

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NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the applicatio n or use by custo mer’s

third party customer(s). Customer is responsible for doing all necessary

testing for th e customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

Document status[1] [2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [shor t] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 2 — 15 March 2012 8 of 9

NXP Semiconductors PMEG3010EB

1 A very low VF MEGA Schottky barrier rectifier

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in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standard s, customer

(a) shall use the product without NXP Semiconductors’ warranty of the

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Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G

reenChip,HiPerSmart,HITAG,I²C-bus

logo,ICODE,I-CODE,ITEC,Labelution,MIFARE,MIFARE Plus,MIFARE

Ultralight,MoReUse,QLPAK,Silicon

Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia

andUCODE — are trademarks of NXP B.V.

HD Radio andHD Radio logo — are trademarks of iBiquity Digital

Corporation.

13. Contact information

For more information, please visit:http://www.nxp.com

For sales office addresses, please send an email to:salesaddresses@nxp.com

NXP Semiconductors PMEG3010EB

1 A very low VF MEGA Schottky barrier rectifier

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 15 March 2012

Document identifier: PMEG3010EB

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

14. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2

6 Thermal characteristics . . . . . . . . . . . . . . . . . . .2

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .3

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . .4

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . .4

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .5

10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . .6

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . . .7

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .7

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . .7

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . .8

13 Contact information. . . . . . . . . . . . . . . . . . . . . . .8