© 2010 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 175°C 100 V
VDGR TJ= 25°C to 175°C, RGS = 1MΩ 100 V
VGSS Continuous ± 20 V
VGSM Transient ± 30 V
ID25 TC= 25°C 170 A
IL(RMS) External Lead Current Limit 160 A
IDM TC= 25°C, Pulse Width Limited by TJM 350 A
IATC= 25°C 60 A
EAS TC= 25°C 2 J
dv/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 10 V/ns
PDTC= 25°C 715 W
TJ -55 to +175 °C
TJM +175 °C
Tstg -55 to +175 °C
TL1.6mm (0.063in) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque (TO-264 & TO-3P) 1.13/10 Nm/lb.in.
Weight TO-268 4.0 g
TO-3P 5.5 g
TO-264 10.0 g
N-Channel Enhancement Mode
Avalanche Rated
PolarTM
Power MOSFET
IXTT170N10P
IXTQ170N10P
IXTK170N10P
DS99176F(01/10)
VDSS = 100V
ID25 = 170A
RDS(on) ≤≤
≤≤
≤ 9mΩΩ
ΩΩ
Ω
G = Gate D = Drain
S = Source Tab = Drain
TO-3P (IXTQ)
Tab
D
G
S
TO-264 (IXTK)
S
G
D Tab
TO-268 (IXTT)
G
S
Tab
Features
zInternational Standard Packages
zFast Intrinsic Rectifier
zAvalanche Rated
zLow RDS(ON) and QG
zLow Package Inductance
Advantages
zHigh Power Density
zEasy to Mount
zSpace Savings
Applications
zSwitch-Mode and Resonant-Mode
Power Supplies
zDC-DC Converters
zLaser Drivers
zAC and DC Motor Drives
zRobotics and Servo Controls
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 100 V
VGS(th) VDS = VGS, ID = 250μA 2.5 5.0 V
IGSS VGS = ± 20V, VDS = 0V ±100 nA
IDSS VDS = VDSS, VGS = 0V 25 μA
TJ = 150°C 250 μA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 9 mΩ
VGS = 15V, ID = 350A 7 mΩ
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IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTT170N10P IXTQ170N10P
IXTK170N10P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 50 72 S
Ciss 6000 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 2340 pF
Crss 730 pF
td(on) 35 ns
tr 50 ns
td(off) 90 ns
tf 33 ns
Qg(on) 198 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 39 nC
Qgd 107 nC
RthJC 0.21 °C/W
RthCS (TO-3P) 0.25 °C/W
(TO-264) 0.15 °C/W
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 60A
RG = 3.3Ω (External)
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 170 A
ISM Repetitive, Pulse Width Limited by TJM 350 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 120 ns
QRM 2.0 μC
IF = 25A, -di/dt = 100A/μs,
VR = 50V, VGS = 0V
TO-268 (IXTT) Outline
TO-3P (IXTQ) Outline
TO-264 AA ( IXTK) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Back Side 1 = Gate
2 = Drain
3 = Source
Tab = Drain
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© 2010 IXYS CORPORATION, All Rights Reserved
IXTT170N10P IXTQ170N10P
IXTK170N10P
Fi g . 1. Ou tpu t C h aracter i st i cs @ TJ = 25ºC
0
20
40
60
80
100
120
140
160
180
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
6V
5V
7V
8V
9V
Fi g . 2. Exte n d ed Ou tpu t C h ar ac ter i st i cs @ TJ = 25ºC
0
40
80
120
160
200
240
280
320
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V
DS
- Volts
I
D
- Ampere s
V
GS
= 10V
9V
5V
8V
6V
7V
Fi g . 3. Ou tp ut C h ar act er i stics @ TJ = 150º C
0
20
40
60
80
100
120
140
160
180
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
V
DS
- Volts
I
D
- Am peres
V
GS
= 10V
6V
5V
8V
9V
7V
Fig. 4. RDS(on) Normalized to ID = 85A Valu e vs.
Junction Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 170A
I
D
= 85A
Fig. 5. RDS(on) Normalized to ID = 8 5A Valu e vs.
Drain Current
0.6
1.0
1.4
1.8
2.2
2.6
3.0
0 50 100 150 200 250 300 350
I
D
- A mpere s
R
DS(on)
- Normalized
V
GS
= 10V
15V
- - - - -
T
J
= 175ºC
T
J
= 25ºC
Fi g . 6. Maxi mum D r ain C u rr en t vs.
Case Temp er atur e
0
20
40
60
80
100
120
140
160
180
-50 -25 0 25 50 75 100 125 150 175
T
C
- Deg re es Centig rade
I
D
- Ampe res
Ext er nal Lead Curr ent Limit
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IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTT170N10P IXTQ170N10P
IXTK170N10P
Fig. 7. Input Adm ittance
0
40
80
120
160
200
240
280
320
345678910
VGS - Volts
ID - Amperes
T
J
= - 40ºC
25ºC
150ºC
Fig. 8. Transcondu ctance
0
20
40
60
80
100
120
0 40 80 120 160 200 240 280 320
ID - Amp ere s
g
f s
- Si emens
T
J
= - 40ºC
25ºC
150ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
50
100
150
200
250
300
350
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
VSD - Volts
IS - Amperes
T
J
= 150ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160 180 200
QG - NanoCoulombs
VGS - Volts
V
DS
= 50V
I
D
= 85A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
VDS - Volts
Capacitance - PicoF arads
f
= 1 MHz
Ciss
Crss
Coss
Fi g . 12. F o r ward -B i as Sa fe Op er ati n g Area
1
10
100
1,000
110100
VDS - V o lts
ID - Amperes
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
1ms 100µs
R
DS(on)
Limit 10ms
DC
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© 2010 IXYS CORPORATION, All Rights Reserved IXYS REF: T_170N10P(8S)01-07-10-C
IXTT170N10P IXTQ170N10P
IXTK170N10P
F i g . 13. Maxi mu m Transi ent Ther mal I mp ed an ce
0.001
0.010
0.100
1.000
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z(th)JC - º C / W
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