Document Number: 93714 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 02-Feb-11 1
Phase Control Thyristors (Hockey PUK Version), 1473 A
ST1000C..K Series
Vishay Semiconductors
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case A-24 (K-PUK)
• High profile hockey PUK
• Compliant to RoHS Directive 2002/95/EC
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
ELECTRICAL SPECIFICATIONS
PRODUCT SUMMARY
IT(AV) 1473 A
A-24 (K-PUK)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV)
1473 A
Ths 55 °C
IT(RMS)
2913 A
Ths 25 °C
ITSM
50 Hz 20.0 A
60 Hz 21.2
I2t50 Hz 2000 kA2s
60 Hz 1865
I2t20 000 kA2s
VDRM/VRRM Range 1200 to 2600 V
tqTypical 300 μs
TJRange - 40 to 125 °C
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK REVERSE
VOLTAGE
V
IRRM MAXIMUM
AT TJ = 125 °C
mA
ST1000C..K
12 1200 1300
100
16 1600 1700
18 1800 1900
20 2000 2100
22 2200 2300
24 2400 2500
26 2600 2700
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2Revision: 02-Feb-11
ST1000C..K Series
Vishay Semiconductors Phase Control Thyristors
(Hockey PUK Version), 1473 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature IT(AV)
180° conduction, half sine wave
Double side (single side) cooled
1473 (630) A
55 (85) °C
Maximum RMS on-state current IT(RMS) DC at 25 °C heatsink temperature double side cooled 6540 A
Maximum peak, one-cycle,
non-repetitive surge current ITSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
20.0
kA
t = 8.3 ms 21.2
t = 10 ms 100 % VRRM
reapplied
17.0
t = 8.3 ms 18.1
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
2000
kA2s
t = 8.3 ms 1865
t = 10 ms 100 % VRRM
reapplied
1445
t = 8.3 ms 1360
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 20 000 kA2s
Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.950 V
High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.024
Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.283 m
High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.265
Maximum on-state voltage drop VTM Ipk = 3000 A, TJ = 125 °C, tp = 10 ms sine pulse 1.80 V
Maximum holding current IHTJ = 25 °C, anode supply 12 V resistive load 600 mA
Typical latching current IL1000
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of
rise of turned-on current dI/dt Gate drive 20 V, 20 , tr 1 μs
TJ = TJ maximum, anode voltage 80 % VDRM
1000 A/μs
Typical delay time td
Gate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C 1.9
μs
Typical turn-off time tq
ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/μs,
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs 300
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/μs
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied 100 mA
Document Number: 93714 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 02-Feb-11 3
ST1000C..K Series
Phase Control Thyristors
(Hockey PUK Version), 1473 A Vishay Semiconductors
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS
VALUES UNITS
TYP. MAX.
Maximum peak gate power PGM TJ = TJ maximum, tp 5 ms 16 W
Maximum peak average gate power PG(AV) TJ = TJ maximum, f = 50 Hz, d% = 50 3
Maximum peak positive gate current IGM
TJ = TJ maximum, tp 5 ms
3.0 A
Maximum peak positive gate voltage + VGM 20 V
Maximum peak negative gate voltage - VGM 5.0
DC gate current required to trigger IGT
TJ = - 40 °C
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
200 -
mATJ = 25 °C 100 200
TJ = 125 °C 50 -
DC gate voltage required to trigger VGT
TJ = - 40 °C 1.4 -
VTJ = 25 °C 1.1 3.0
TJ = 125 °C 0.9 -
DC gate current not to trigger IGD
TJ = TJ maximum
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated VDRM anode to
cathode applied
10 mA
DC gate voltage not to trigger VGD 0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating temperature range TJ- 40 to 125 °C
Maximum storage temperature range TStg - 40 to 150
Maximum thermal resistance,
junction to heatsink RthJ-hs
DC operation single side cooled 0.042
K/W
DC operation double side cooled 0.021
Maximum thermal resistance,
case to heatsink RthC-hs
DC operation single side cooled 0.006
DC operation double side cooled 0.003
Mounting force, ± 10 % 24 500
(2500)
N
(kg)
Approximate weight 425 g
Case style See dimensions - link at the end of datasheet A-24 (K-PUK)
RthJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180° 0.003 0.003 0.002 0.002
TJ = TJ maximum K/W
120° 0.004 0.004 0.004 0.004
90° 0.005 0.005 0.005 0.005
60° 0.007 0.007 0.007 0.007
30° 0.012 0.012 0.012 0.012
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4Revision: 02-Feb-11
ST1000C..K Series
Vishay Semiconductors Phase Control Thyristors
(Hockey PUK Version), 1473 A
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
Fig. 6 - On-State Power Loss Characteristics
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (°C)
70
80
90
100
110
120
130
0 100 200 300 400 500 600 700
30° 60° 90°
120°
180°
Conduction Angle
ST1000C..K Series
(Single Side Cooled
)
R (DC) = 0.042 K/W
thJ-hs
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (°C)
70
80
90
100
110
120
130
0 200 400 600 800 1000
DC
30° 60°
90°
120°
180°
Conduction Period
ST1000C..K Series
(Single Side Cooled)
R (DC) = 0.042 K/W
thJ-hs
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (°C)
40
50
60
70
80
90
100
110
120
130
0 400 800 1200 1600
30˚ 60˚ 90˚
120˚ 180˚
Conduction Angle
ST1000C..K Series
(Double Side Cooled)
R (DC) = 0.021 K/W
thJ-hs
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (°C)
40
50
60
70
80
90
100
110
120
130
0 400 800 1200 1600 2000 2400
DC
30˚
60˚
90˚
120˚
180˚
Conduction Period
ST1000C..K Series
(Double Side Cooled)
R (DC) = 0.021 K/W
thJ-hs
Average On-state Current (A)
Maximum Average On-state Power Loss (W)
0
500
1000
1500
2000
2500
3000
0 400 800 1200 1600
RMS Limit
Conduction Angle
180˚
120˚
90˚
60˚
30˚
ST1000C..K Series
T = 125˚C
J
Average On-state Current (A)
Maximum Average On-state Power Loss (W)
0
500
1000
1500
2000
2500
3000
3500
4000
0 500 1000 1500 2000 2500
DC
180˚
120˚
90˚
60˚
30˚
RMS Limit
Conduction Period
ST1000C..K Series
T = 125˚C
J
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Revision: 02-Feb-11 5
ST1000C..K Series
Phase Control Thyristors
(Hockey PUK Version), 1473 A Vishay Semiconductors
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - On-State Voltage Drop Characteristics
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
6000
8000
10000
12000
14000
16000
18000
110100
ST1000C..K Series
Initial T = 125˚C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
Pulse Train Duration (s)
Peak Half Sine Wave On-state Current (A)
6000
8000
10000
12000
14000
16000
18000
20000
22000
0.01 0.1 1
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
ST1000C..K Series
Initial T = 125˚C
No Voltage Reapplied
Rated V Reapplied
RRM
J
Instantaneous On-state Voltage (V)
Instantaneous On-state Current (A)
100
1000
10000
0.5 1 1.5 2 2.5 3 3.5 4
T = 25˚C
J
ST1000C..K Series
T = 125˚C
J
Square Wave Pulse Duration (s)
Transient Thermal Impedance Z thJ-hs (K/W)
0.001
0.01
0.1
0.001 0.01 0.1 1 10 100
Steady State Value
R = 0.42 K/W
(Single Side Cooled)
R = 0.21 K/W
(Double Side Cooled)
(DC Operation)
ST1000C..K Series
thJ-hs
thJ-hs
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6Revision: 02-Feb-11
ST1000C..K Series
Vishay Semiconductors Phase Control Thyristors
(Hockey PUK Version), 1473 A
Fig. 11 - Gate Characteristics
ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95081
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
Tj=25 ˚C
Tj=125 ˚C
Tj=-40 ˚C
(1)
(2) (3)
a) Recommended load line for
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
Frequency Limited by PG(AV)
rated di/dt : 20V, 10ohms; tr<=1 µs
tr<=1 µs
Rectangular gate pulse (1) PGM = 16W, tp = 4ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms
Device: ST100C..K Series
1- Thyristor
2- Essential part number
3- 0 = Converter grade
4- C = Ceramic PUK
8- Critical dV/dt:
5- Voltage code x 100 = VRRM (see Voltage Ratings table)
6- K = PUK case A-24 (K-PUK)
7- 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)
1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)
2 = Eyelet terminals (gate and auxiliary cathode soldered leads)
3 = Fast-on terminals (gate and auxiliary cathode soldered leads)
None = 500 V/µs (standard selection)
L = 1000 V/µs (special selection)
Device code
51324678
ST 100 0 C 26 K 1 -
Document Number: 95081 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 02-Aug-07 1
A-24 (K-PUK)
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
Legal Disclaimer Notice
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Revision: 12-Mar-12 1Document Number: 91000
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