TECHNICAL DATA
PNP SILICON AMPLIFIER TRANSISTOR
Qualified per MIL-PRF-19500/357
Devices Qualified Level
2N3634
2N3634L 2N3635
2N3635L 2N3636
2N3636L 2N3637
2N3637L
JAN
JANTX
JANTXV
JANS
MAXIMUM RATINGS
Ratings Symbol
2N3634*
2N3635* 2N3636*
2N3637* Unit
Collector-Emitter Voltage VCEO 140 175 Vdc
Collector-Base Voltage VCBO 140 175 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Collector Current IC 1.0 Adc
Total Power Dissipation @ TA = +250C(1)
@ TC = +250C(2) PT 1.0
5.0 W
W
Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 0C
*Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices
1) Derate linearly 5.71 mW/0C for TA > +250C
2) Derate linearly 28.6 mW/0C for TC > +250C
TO-39* (TO-205AD)
2N3634, 2N3635
2N3636, 2N3637
TO-5*
2N3634, 2N3635
2N3636, 2N3637
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
IC = 10 mAdc 2N3634, 2N3635
2N3636, 2N3637 V(BR)CEO
140
175
Vdc
Collector-Base Cutoff Current
VCB = 100 Vdc
VCB = 140 Vdc 2N3634, 2N3635 ICBO 100
10
ηAdc
µAdc
Emitter-Base Cutoff Current
VEB = 3.0 Vdc
VEB = 5.0 Vdc IEBO 50
10
ηAdc
µAdc
Collector-Emitter Cutoff Current
VCE = 100 Vdc ICEO 10 µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N3634, L, 2N3635, L, 2N3636, L, 2N3637, L JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 0.1 mAdc, VCE = 10 Vdc 2N3634, 2N3636
IC = 1.0 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 50 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
IC = 0.1 mAdc, VCE = 10 Vdc 2N3635, 2N3637
IC = 1.0 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 50 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
hFE
hFE
25
45
50
50
30
55
90
100
100
60
150
300
Collector-Emitter Saturation Voltage
IC = 10 mAdc, IB = 1.0 mAdc
IC = 50 mAdc, IB = 5.0 mAdc
VCE(sat)
0.3
0.6 Vdc
Base-Emitter Saturation Voltage
IC = 10 mAdc, IB = 1.0 mAdc
IC = 50 mAdc, IB = 5.0 mAdc
VBE(sat)
0.65
0.8
0.9 Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
IC = 30 mAdc, VCE = 30 Vdc, f = 100 MHz 2N3634, 2N3636
2N3635, 2N3637 hfe
1.5
2.0
8.0
8.5
Forward Current Transfer Ratio
IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz 2N3634, 2N3636
2N3635, 2N3637 hfe
40
80
160
320
Small-Signal Short-Circuit Input Impedance
IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz 2N3634, 2N3636
2N3635, 2N3637 hje
100
200
600
1200
Ω
Ω
Small-Signal Open-Circuit Output Admittance
IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz hoe
200 µs
Output Capacitance
VCB = 20 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 10 pF
Input Capacitance
VEB = 1.0 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz Cibo 75 pF
Noise Figure
VCE = 10 Vdc, IC = 0.5 mAdc, Rg = 1.0 Ω f = 100 Hz
f = 1.0 kHz
f = 10 kHz
NF
5.0
3.0
3.0
dB
SAFE OPERATING AREA
DC Tests
TC = 250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 100 Vdc, IC = 30 mAdc 2N3634, 2N3635
VCE = 130 Vdc, IC = 20 mAdc 2N3636, 2N3637
Test 2
VCE = 50 Vdc, IC = 95 mAdc
Test 3
VCE = 5.0 Vdc, IC = 1.0 Adc
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
