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Trench Gate Design
Six IGBTMOD™
200 Amperes / 600 Volts
CM200TU-12F
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Outline Drawing and Circuit Diagram
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Dimensions Inches Millimeters
A 4.21 107.0
B 4.02 102.0
C 1.14 +0.04/-0.02 29.0 +1.0/-0.5
D 3.54±0.01 90.0±0.25
E 3.15±0.01 80.0±0.25
F 0.16 4.0
G 1.02 26.0
H 0.31 8.1
J 0.91 23.0
K 0.47 12.0
L 0.43 11.0
Dimensions Inches Millimeters
M 0.57 14.4
N 0.85 21.7
P 0.67 17.0
Q 1.91 48.5
R 0.15 3.75
SM5 M5
T 0.22 Dia. 5.5 Dia.
V 0.03 0.8
W 0.02 0.5
X 0.110 2.79
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverse-
connected super-fast recover y
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offer ing simplified system assembly
and thermal management.
Features:
□Low Drive Power
□Low VCE(sat)
□Discrete Super-Fast Recover y
Free-Wheel Diode
□Isolated Baseplate for Easy
Heat Sinking
Applications:
□AC Motor Control
□UPS
□Batter y Powered Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM200TU-12F is a
600V (VCES), 200 Ampere Six-
IGBT IGBTMOD™ Power Module.
Current Rating VCES
Type Amperes Volts (x 50)
CM 200 12
V
J
D
J
LL
NN
A
L
C
H
G
F
K
GVP
EUN
N
EB
U
GUN
L
GUP EUP
N
CM
S - NUTS (5 TYP) K
J
Q
GWN
VW
GVN EVN EWN
R
EWP P
NL
EVP
L
GWP
P
T (4 TYP.)
M
RTC
RTC RTC
RTC
RTC
RTC
A
GUP
EUP
GUN
EUN
N
P
UV
EVN
GVN
EVP
GVP
W
EWN
GWN
EWP
GWP
W - THICK x X - WIDE
TAB (12 PLACES)
W - THICK x X - WIDE
TAB (12 PLACES)
TC
MEASURING
POINT
TC
MEASURING
POINT
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CM200TU-12F
Trench Gate Design Six IGBTMOD™
200 Amperes / 600 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM200TU-12F Units
Junction Temperature Tj-40 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current (Tc = 25°C) IC200 Amperes
Peak Collector Current (Tj ≤ 150°C) ICM 400* Amperes
Emitter Current** IE200 Amperes
Peak Emitter Current** IEM 400* Amperes
Maximum Collector Dissipation (Tj < 150°C) Pc590 Watts
Mounting Torque, M5 Main Ter minal –31 in-lb
Mounting Torque, M5 Mounting –31 in-lb
Weight –680 Grams
Isolation Voltage (Main Ter minal to Baseplate, AC 1 min.) Viso 2500 Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V ––1mA
Gate Leakage Voltage IGES VGE = VCES, VCE = 0V ––20 µA
Gate-Emitter Threshold V oltage VGE(th) IC = 20mA, VCE = 10V 5 6 7 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 200A, VGE = 15V, Tj = 25°C–1.6 2.2 Volts
IC = 200A, VGE = 15V, Tj = 125°C–1.6 –Volts
Total Gate Charge QGVCC = 300V, IC = 200A, VGE = 15V –1240 –nC
Emitter-Collector Voltage** VEC IE = 200A, VGE = 0V ––2.6 Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
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CM200TU-12F
Trench Gate Design Six IGBTMOD™
200 Amperes / 600 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies ––54 nf
Output Capacitance Coes VCE = 10V, VGE = 0V ––3.6 nf
Re verse Transfer Capacitance Cres ––2nf
Inductive Tur n-on Delay Time td(on) VCC = 300V, IC = 200A, ––120 ns
Load Rise Time trVGE1 = VGE2 = 15V, ––100 ns
Switch Tur n-off Delay Time td(off) RG = 3.1⍀,––350 ns
Times F all Time tfInductive Load ––250 ns
Diode Reverse Recovery Time** trr Switching Operation ––150 ns
Diode Reverse Recovery Charge** Qrr IE = 200A –3.8 –µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/6 Module, Tc Reference –0.21 °C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/6 Module, Tc Reference ––0.35 °C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case R th(j-c)'Q Per IGBT 1/6 Module, –0.13 °C/W
Tc Reference Point Under Chip
Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied –0.015 –°C/W
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
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CM200TU-12F
Trench Gate Design Six IGBTMOD™
200 Amperes / 600 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
01234
240
80
0
VGE = 20V
11 10
9.5
9
7.5
Tj = 25o
C
160
320
400
8.5
8
15
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
2.5
0 80 160 240 320
2.0
1.5
1.0
0.5
0400
VGE = 15V
Tj = 25°C
Tj = 125°C
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
048121620
4
3
2
1
0
Tj = 25°C
IC = 80A
IC = 400A
IC = 200A
0
10
0
10
1
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
2
10
3
EMITTER CURRENT, IE, (AMPERES)
1234
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
CAPACITANCE, Cies, Coes, Cres, (nF)
CAPACITANCE VS. VCE
(TYPICAL)
10
-1
10
0
10
2
10
2
10
1
10
0
10
-1
10
1
VGE = 0V
Cies
Coes
Cres
COLLECTOR CURRENT, IC, (AMPERES)
10
3
10
1
10
2
10
3
10
2
10
1
10
0
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
td(off)
td(on)
tr
VCC = 300V
VGE = ±15V
RG = 3.1 Ω
Tj = 125°C
Inductive Load
tf
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY TIME, trr, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
2
10
1
10
2
10
3
10
1
10
0
trr
10
2
10
1
10
0
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
Irr
VCC = 300V
VCC = 200V
GATE CHARGE, QG, (nC)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
GATE CHARGE, VGE
20
0
16
12
8
4
0
IC = 200A
600 1200 1800
T
j
= 25°C
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
10
-1
10
-2
10
-3
Zth = Rth • (NORMALIZED VALUE)
Per Unit Base
Rth(j-c) = 0.21°C/W (IGBT)
Rth(j-c) = 0.35°C/W (FWDi)
Single Pulse
TC = 25°C
VCC = 300V
VGE = ±15V
RG = 3.1 Ω
Tj = 25°C
Inductive Load
