IPA50R140CP
CoolMOSTM Power Transistor
Features
W4 EHB: M?: ;8;IJ/ =L"a`#?D1,
W)EM ;IJ<?=KH;E<C ;H?J/ , + N. Y
W2 BJH7BEM =7J;9>7H=;
W" NJH;C ;: L: JH7J;:
W% ?=>F;7A9KHH;DJ97F78?B?JO
W-8<H;;B;7: FB7J?D=/ E% 09EC FB?7DJ    
W. K7B!<?;:       799EH: ?D=JE' " !" )#
CoolMOS CP is designed for:
W% 7H: 7D: IE<JIM ?J9>?D=0* -0<EHI;HL;HFEM ;HIKFFB?;I
W * -# <EH 15+ EJ;8EEA7: 7FJ;H- !- 7D: ) !13
W-4 * IJ7=;I<EH0 ;HL;H : 7FJ;H
Maximum ratings, 7JT\ Z KDB;IIEJ>;HM ?I;IF;9?<?;:
Parameter Symbol Conditions Unit
EDJ?DKEKI: H7?D9KHH;DJ
*# I=T< Z 9
T< Z
-KBI;: : H7?D9KHH;DJ
+# I=%bg^eW T< Z
L7B7D9>;;D;H=OI?D=B;FKBI; E9L I=  V== 3 /*/ _C
L7B7D9>;;D;H=OH;F;J?J?L;t9K
+#%,# E9K I=  V== 3
L7B7D9>;9KHH;DJH;F;J?J?L;t9K
+#%,# I9K 9
* , 0# " 1: v(VtHK==;: D;II : v(VtV=L  3 O(`e
$ 7J;IEKH9;LEBJ7=; V@L efSf[U O
< % P
-EM;H: ?II?F7J?ED Pfaf T< Z P
, F;H7J?D=7D: IJEH7=;J;C F;H7JKH; T\TefY v<
* EKDJ?D=JEHGK; *  I9H;M I + 9C
w,)
,-

)'2,
2',
.)
w+)
Value
+,
*.
./
V!08M\_Sj ..) O
R=L"a`#%_Sj )'*-) "
QY%fkb -1 `<
Product Summary
Type Package Marking
BI9.)K*-)<I I@&MH++)?I .K*-)I
1, # -
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IPA50R140CP
Maximum ratings, 7JT\ Z KDB;IIEJ>;HM ?I;IF;9?<?;:
Parameter Symbol Conditions Unit
EDJ?DKEKI: ?E: ;<EHM7H: 9KHH;DJ
*# IL9
!?E: ;FKBI;9KHH;DJ
+# IL%bg^eW ./
/ ;L;HI;: ?E: ;: v(Vt-# Vv(Vt*. O(`e
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
1>;HC 7BH;I?IJ7D9;@KD9J?ED97I; RfZC< & & ,'/. D(P
RfZC9 ^WSVWV & & /+
0EB: ;H?D=J;C F;H7JKH;
M7L;IEB: ;H?D=EDBO7BBEM;: 7JB;7: I Tea^V
 C C   ?D
<HEC 97I;<EH I & & +/) v<
Electrical characteristics, 7JT\ Z KDB;IIEJ>;HM ?I;IF;9?<?;:
Static characteristics
!H7?DIEKH9;8H;7A: EMDLEBJ7=; V";K#=LL V@L 3 I= \ .)) & & O
$ 7J;J>H;I>EB: LEBJ7=; V@L"fZ# V=L6V@LI=  C +'. , ,'.
6;HE=7J;LEBJ7=;: H7?D9KHH;DJ I=LL V=L 3 V@L 3 
T\ Z & & + x9
V=L 3 V@L 3 
T\ Z & +) &
$ 7J;IEKH9;B;7A7=;9KHH;DJ I@LL V@L 3 V=L 3 & & *)) `9
!H7?DIEKH9;EDIJ7J;H;I?IJ7D9; R=L"a`# V@L 3 I=  
T\ Z & )'*, )'*- "
V@L 3 I=  
T\ Z & )',+ &
$ 7J;H;I?IJ7D9; R@f * % PEF;D: H7?D  "
Value
T< Z
*-
Values
1>;HC 7BH;I?IJ7D9;@KD9J?ED
S_T[W`f
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IPA50R140CP
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
&DFKJ97F79?J7D9; C[ee & +.-) & b?
, KJFKJ97F79?J7D9; Caee & **) &
" <<;9J?L;EKJFKJ97F79?J7D9;;D;H=O
dW^SfWV.# Ca"Wd# & **) &
" <<;9J?L;EKJFKJ97F79?J7D9;J?C ;
dW^SfWV/# Ca"fd# & +,) &
1KHDED: ;B7OJ?C ; tV"a`# & ,. & `e
/ ?I;J?C ; td& *- &
1KHDE<<: ;B7OJ?C ; tV"aXX# & 1) &
# 7BBJ?C ; tX& 1') &
$ 7J; >7H=; >7H79J;H?IJ?9I
$ 7J;JEIEKH9;9>7H=; QYe & ** & `<
$ 7J;JE: H7?D9>7H=; QYV & *. &
$ 7J;9>7H=;JEJ7B QY& -1 /-
$ 7J;FB7J;7KLEBJ7=; Vb^SfWSg & .'+ & O
Reverse Diode
!?E: ;<EHM 7H: LEBJ7=; VL= V@L 3 I?  
T\ Z & )'2 *'+ O
/ ;L;HI;H;9EL;HOJ?C ; tdd & -)) & `e
/ ;L;HI;H;9EL;HO9>7H=; Qdd & .'/ & x<
-;7AH;L;HI;H;9EL;HO9KHH;DJ Idd_ & +/ & 9
)#' 01! 7D: ' " 0 !
)?C ?J;: EDBO8O1\%_Sj
+#- KBI;M ?: J>tbB?C ?J;: 8OT\%_Sj
,#/ ;F;J?J?L;7L7B7D9>;97KI;I7: : ?J?ED7BFEM ;HBEII;IJ>7J97D8;97B9KB7J;: 7IP9O6E9K$f.
&L="B=: ?: J" \ I3 =<^[`] 3 3 bWS]5O";K#=LL1\5M\_Sj?: ;DJ?97BBEM 7D: >?=>I?: ;IM ?J9>
.# Ca"fd#?I7<?N;: 97F79?J7D9;J>7J=?L;IJ>;I7C ;9>7H=?D=J?C ;7ICaeeM >?B;V=L?IH?I?D=<HEC  JE V=LL'
/# Ca"Wd#?I7<?N;: 97F79?J7D9;J>7J=?L;IJ>;I7C ;IJEH;: ;D;H=O7ICaeeM >?B;V=L?IH?I?D=<HEC  JE V=LL'
0# Ca"fd#?I7<?N;: 97F79?J7D9;J>7J=?L;IJ>;I7C ;9>7H=?D=J?C ;7ICaeeM >?B;V=L?IH?I?D=<HEC  JE V=LL'
VK 3 I?6IL
Vi?(Vt  \ I
Values
V@L 3 V=L 3 
f * % P
V== 3 
V@L 3 I=  
R@  "
V== 3 I=  
V@L JE 3
V@L 3 V=L 3
JE 3
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IPA50R140CP
1 Power dissipation 2 Safe operating area
Pfaf6X"T<#I=6X"V=LT< Z D6)
F7H7C ;J;Htb
3 Max. transient thermal impedance 4 Typ. output characteristics
R"fZC<#6X"fb I=6X"V=LT\ Z
F7H7C ;J;HD=tb(TF7H7C ;J;HV@L
0
5
10
15
20
25
30
35
0 50 100 150
TC[°C]
Ptot [W]
\ I
\ I
\ I
C I
C I
=<
103
102
101
100
102
101
100
10-1
VDS [V]
ID[A]
I?D=B;FKBI;
)')*
)')+
)').
)'*
)'+
)'.
101
100
10-1
10-2
10-3
10-4
10-5
101
100
10-1
10-2
tp[s]
ZthJC [K/W]
 3
3
 3
3
3
3
3
3
0
15
30
45
60
75
0 5 10 15 20
VDS [V]
ID[A]
B?C ?J;: 8OEDIJ7J;
dWe[efS`UW
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IPA50R140CP
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
I=6X"V=LT\ Z R=L"a`#6X"I=T\ Z
F7H7C ;J;HV@L F7H7C ;J;HV@L
7 Drain-source on-state resistance 8 Typ. transfer characteristics
R=L"a`#6X"T\I=  V@L 3 I=6X"V@LQV=Lm7+mI=mR=L"a`#_Sj
F7H7C ;J;HT\
fkb

0.05
0.1
0.15
0.2
0.25
0.3
0.35
-60 -30 0 30 60 90 120 150 180
Tj[°C]
RDS(on) [ ]
Z
Z
0
15
30
45
60
75
90
0 3 5 8 10
VGS [V]
ID[A]
 3
3
 3
3
3
3
3
3
0
10
20
30
40
50
0 5 10 15 20 25
VDS [V]
ID[A]
 3
3
 3
3
3
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 10 20 30 40 50 60
ID[A]
RDS(on) [ ]
/ ;L  F7=;
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IPA50R140CP
9 Typ. gate charge 10 Forward characteristics of reverse diode
V@L6X"QYSfWI=  FKBI;: I?6X"VL=#
F7H7C ;J;HV== F7H7C ;J;HT\
11 Avalanche energy 12 Drain-source breakdown voltage
E9L6X"T\I=   V== 3 V;K"=LL#6X"T\I=  C
Z
Z
Z 
Z 
102
101
100
10-1
0 0.5 1 1.5 2
VSD [V]
IF[A]
3
3
0
2
4
6
8
10
0 10 20 30 40 50
Qgate [nC]
VGS [V]
440
460
480
500
520
540
560
580
-60 -20 20 60 100 140 180
Tj[°C]
VBR(DSS) [V]
0
100
200
300
400
500
600
700
25 75 125 175
Tj[°C]
EAS [mJ]
/ ;L  F7=;
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IPA50R140CP
13 Typ. capacitances 14 Typ. Coss stored energy
C6X"V=LV@L 3 f * % P Eaee=X(V=L)
0
2
4
6
8
10
12
0 100 200 300 400 500
VDS [V]
Eoss [µJ]
<[ee
<aee
<dee
105
104
103
102
101
100
0 100 200 300 400 500
VDS [V]
C[pF]
/ ;L  F7=;
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IPA50R140CP
Definition of diode switching characteristics
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IPA50R140CP
PG-TO220-3-31: Outline / Fully isolated package (2500VAC; 1minute)
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IPA50R140CP
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office
"iii'[`X[`Wa`'Ua_#'
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
/ ;L  F7=;
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