May 2009
1
MITSUBISHI HVIGBT MODULES
CM200HG-130H
HIGH POWER SWITCHING USE
INSULATED TYPE
●IC .................................................................. 200 A
●VCES ...................................................... 6500 V
●High Insulated Type
●1-element in a Pack
●AISiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
CM200HG-130H
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CIRCUIT DIAGRAM
>PET+PBT<
>PET+PBT<
EG C
1
2
+1.0
0
depth
min. 4
screwing depth
min. 16.5
E
(1)
C
(2)
E
G
C
48
4-φ7 MOUNTING HOLES
2-M8 NUTS
5
±0.15
73
±0.5
57
±0.25
17
±0.1
140
±0.5
124
±0.25
41
±0.3
40.4
±0.5
22
±0.3
17.4
±0.3
TAB #110. T = 0.5
2.8
±0.1
5
±0.1
21.6
±0.3
12.9
±0.3
16.2
±0.3
5.8
±0.1
36.2
±0.3
44
±0.3
LABEL
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May 2009
2
MITSUBISHI HVIGBT MODULES
CM200HG-130H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS
Symbol Item Conditions
Tj = –40°C
Tj = +25°C
Tj = +125°C
Ratings Unit
VCES
VGES
IC
ICM
IE
IEM
Pc
Viso
Ve
Tj
Top
Tstg
tpsc
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current (Note 2)
Maximum power dissipation
(Note 3)
Isolation voltage
Partial discharge extinction voltage
Junction temperature
Operating temperature
Storage temperature
Maximum short circuit pulse width
VGE = 0V
VCE = 0V, Tj = 25°C
DC, Tc = 80°C
Pulse (Note 1)
DC
Pulse (Note 1)
Tc = 25°C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1 min.
RMS, sinusoidal, f = 60Hz, QPD ≤ 10 pC
VCC = 4500V, VCE ≤ VCES, VGE = 15V, Tj = 125°C
5800
6300
6500
± 20
200
400
200
400
2900
10200
5100
–40 ~ +150
–40 ~ +125
–40 ~ +125
10
V
V
A
A
A
A
W
V
V
°C
°C
°C
µs
ELECTRICAL CHARACTERISTICS
Symbol Item Conditions
Tj = 25°C
Tj = 125°C
—
—
5.0
–0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
6.0
—
41.0
2.5
0.7
3.3
4.50
4.60
1.20
0.35
1.50
8.20
0.50
3.10
1.20
4.00
3.60
1.00
2.40
370
0.70
3
30
7.0
0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Ty p
Limits
MaxMin Unit
ICES
VGE(th)
IGES
Cies
Coes
Cres
Qg
VCE(sat)
td(on)
tr
Eon(10%)
td(off)
tf
tf2
Eoff(10%)
VEC
trr
trr2
Qrr
Erec(10%)
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Collector-emitter saturation
voltage
Tu r n-on delay time
Tu r n-on rise time
Tu r n-on switching energy
(Note 5)
Tu r n-off delay time
Tu r n-off fall time
Tu r n-off fall time
Tu r n-off switching energy
(Note 5)
Emitter-collector voltage
(Note 2)
Reverse recovery time
(Note 2)
Reverse recovery time
(Note 2)
Reverse recovery charge
(Note 2)
Reverse recovery energy
(Note 2), (Note 5)
VCE = VCES, VGE = 0V
VCE = 10 V, IC = 20 mA, Tj = 25°C
VGE = VGES, VCE = 0V, Tj = 25°C
VCE = 10 V, VGE = 0 V, f = 100 kHz, Tj = 25°C
VCC = 3600 V, IC = 200 A, VGE = ±15 V, Tj = 25°C
IC = 200 A (Note 4)
VGE = 15 V
VCC = 3600 V, IC = 200 A, VGE = ±15 V
RG(on) = 30 Ω, Tj = 125°C, Ls = 220 nH
t(IGBT_off) = 60 µs(Note 6), Inductive load
VCC = 3600 V, IC = 200 A, VGE = ±15 V
RG(off) = 100 Ω, Tj = 125°C, Ls = 220 nH
Inductive load
IE = 200 A (Note 4)
VGE = 0 V
VCC = 3600 V, IE = 200 A, VGE = ±15 V
RG(on) = 30 Ω, Tj = 125°C, Ls = 220 nH
t(IGBT_off) = 60 µs(Note 6), Inductive load
mA
V
µA
nF
nF
nF
µC
V
µs
µs
J/P
µs
µs
µs
J/P
V
µs
µs
µC
J/P
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
http://store.iiic.cc/
May 2009
3
MITSUBISHI HVIGBT MODULES
CM200HG-130H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
THERMAL CHARACTERISTICS
Symbol Item Conditions
—
—
—
—
—
18.0
42.0
66.0
—
Ty p
Limits
MaxMin Unit
R
th(j-c)Q
Rth(j-c)R
Rth(c-f)
Thermal resistance
Thermal resistance
Contact thermal resistance
Junction to Case, IGBT part
Junction to Case, FWDi part
Case to Fin, λgrease = 1W/m·K, D(c-f) = 100 µm
K/kW
K/kW
K/kW
MECHANICAL CHARACTERISTICS
Symbol Item Conditions
7.0
3.0
1.0
—
600
26
56
—
—
—
—
—
0.5
—
—
—
54
0.38
15.0
6.0
3.0
—
—
—
—
—
—
Ty p
Limits
MaxMin Unit
M
t
Ms
Mt
m
CTI
da
ds
LP CE
RCC’+EE’
Mounting torque
Mass
Comparative tracking index
Clearance
Creepage distance
Internal inductance
Internal lead resistance
M8: Main terminals screw
M6: Mounting screw
M4: Auxiliary terminals screw
Tc = 25°C
N·m
N·m
N·m
kg
—
mm
mm
nH
mΩ
Note 1. Pulse width and repetition rate should be such that junction temperature (T
j
) does not exceed T
opmax
rating (125°C).
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
3. Junction temperature (T
j
) should not exceed T
jmax
rating (150°C).
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. E
on(10%)
/ E
off(10%)
/ E
rec(10%)
are the integral of
0.1V
CE
x 0.1I
C
x dt.
6. t
(IGBT_off)
definition is shown as follows.
Ic
t
(IGBT_off)
time
http://store.iiic.cc/
May 2009
4
MITSUBISHI HVIGBT MODULES
CM200HG-130H
HIGH POWER SWITCHING USE
INSULATED TYPE
Fig. 1 – Definitions of switching times & energies of IGBT part
Fig. 2 – Definitions of reverse recovery charge & energy of FWDi part
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
90%IC
10%VGE
90%VGE
90%IC
50%IC
10%IC
dt
di
10%IC10%VCE 10%VCE
VCE
Eon = ic·vce dt
t2
t1
IC
VCC
VGE
td(on) td(off) tf2
tr
ton
t1 t2 t3 t4
∫
Eoff = ic·vce dt
tf = (0.9ic–0.1ic)/(di/dt)
toff = td(off)+tf
t4
t3
∫
0
0
di/dt
trr
dt
10%V
EC
V
EC
(V
R
)
10%I
E
di
Irr
trr2
t5 t60
Qrr = – ie dt
t6
0
∫
∫
Erec = – ie·vec dt
t6
t5
I
E
(I
F
)
0
0
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May 2009
5
MITSUBISHI HVIGBT MODULES
CM200HG-130H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE (V)
COLLECTOR CURRENT (A)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE (V)
COLLECTOR CURRENT (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
EMITTER-COLLECTOR VOLTAGE (V)
EMITTER CURRENT (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT (A)
300
400
200
100
002468
02468
6 8420 10 12
300
400
200
100
0
300
400
200
100
0
300
400
200
100
002468
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
V
GE
= 15V
V
CE
= 20V
T
j
= 125°C
V
GE
= 8V
V
GE
= 20V
V
GE
= 10V
V
GE
= 12V
V
GE
= 15V
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May 2009
6
MITSUBISHI HVIGBT MODULES
CM200HG-130H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
0 100 200 300 400 500 0
1
2
3
4
0
0
1
2
3
4
102
103
101
100
100
10-1 23 57 101102
23 57 23 57
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
CAPACITANCE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE (V)
CAPACITANCE (nF)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
GATE CHARGE (µC)
GATE-EMITTER VOLTAGE (V)
COLLECTOR CURRENT (A)
SWITCHING ENERGIES (J/P)
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS
(TYPICAL)
-15
-10
-5
0
5
10
15
20
42310
200100 15050
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS
(TYPICAL)
GATE RESISTOR (Ω)
SWITCHING ENERGIES (J/P)
VCC = 3600V, IC = 200A
VGE = ±15V, Tj = 125°C
Inductive load
10-1
VCE = 3600V, IC = 200A
Tj = 25°C
Erec
Eoff
Cies
Coes
Cres
VCC = 3600V, VGE = ±15V
RG(on) = 30Ω, RG(off) = 100Ω
Tj = 125°C, Inductive load
Eon
VGE = 0V, Tj = 25°C
f = 100kHz
Erec
Eoff
Eon
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May 2009
7
MITSUBISHI HVIGBT MODULES
CM200HG-130H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
COLLECTOR CURRENT (A)
SWITCHING TIMES (µs)
HALF-BRIDGE SWITCHING TIME
CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT (A)
REVERSE RECOVERY TIME (µs)
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CURRENT (A)
10
3
10
4
10
2
10
1
10
1
10
2
10
0
10
-1
2
3
5
7
2
3
5
7
2
3
5
7
10
1
10
2
10
0
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
10
-2
10
-3
23 57
10
-1
23 57
10
0
23 57
10
1
23 57
TIME (s)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
NORMALIZED TRANSIENT THERMAL IMPEDANCE
1.2
1.0
0.8
0.6
0.4
0
0.2
10
1
423 57423 57
10
3
10
2
10
1
423 57423 57
10
3
10
2
10
-1
t
d(off)
t
d(on)
t
f
t
r
V
CC
= 3600V, V
GE
= ±15V
R
G(on)
= 30Ω, R
G(off)
= 100Ω
T
j
= 125°C, Inductive load
V
CC
= 3600V, V
GE
= ±15V
R
G(on)
= 30Ω, R
G(off)
= 100Ω
T
j
= 125°C, Inductive load
l
rr
t
rr
R
th(j–c)Q
= 42K/kW
R
th(j–c)R
= 66K/kW
ZR
th( j –c ) (
t
)=Σ
n
i=1
i1–exp t
i
–
t
R
i
[K/kW]
τ
i
[sec]
1
0.0059
0.0002
2
0.0978
0.0074
3
0.6571
0.0732
4
0.2392
0.4488
http://store.iiic.cc/
May 2009
8
MITSUBISHI HVIGBT MODULES
CM200HG-130H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
COLLECTOR-EMITTER VOLTAGE (V)
COLLECTOR CURRENT (A)
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
500
100
200
300
400
0
5000
1000
2000
3000
4000
0
500
100
200
300
400
0
0
2000 40000 6000 8000
COLLECTOR-EMITTER VOLTAGE (V)
COLLECTOR CURRENT (A)
SHORT CIRCUIT
SAFE OPERATING AREA
(SCSOA)
2000 40000 6000 80002000 4000 6000 8000
COLLECTOR-EMITTER VOLTAGE (V)
REVERSE RECOVERY CURRENT (A)
FREE-WHEEL DIODE REVERSE RECOVERY
SAFE OPERATING AREA
(RRSOA)
V
CC
≤ 4500V, di/dt
≤ 1000A/µs
T
j
= 125°C
V
CC
≤ 4500V, V
GE
= ±15V
T
j
= 125°C, R
G(off)
≥ 100Ω
V
CC
≤ 4500V, V
GE
= ±15V
T
j
= 125°C, R
G(off)
≥ 100Ω
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