©2005 Fairchild Semiconductor Corporation RFP12N10L Rev. B1
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP12N10L UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS 100 V
Drain to Gate Voltage (RGS = 1MΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V DGR 100 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID12 A
Pul s e d D rai n C u r re n t (No te 3 ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 30 A
Gate to Sou rc e Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±10 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD60 W
Abo ve TC = 25oC, Derate Linearly. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.48 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
P ackage Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300
260
oC
oC
CAUTION: St resses above those l isted in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a stress on ly rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 100 - - V
Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA (Figure 7) 1 - 2 V
Zero Gate Voltage Drain Current IDSS VDS = 80V - - 1 µA
VGS = 0V TC = 125oC- - 50 µA
Gate to Source Leakage Current IGSS VGS = 10V, VDS = 0V - - 100 nA
Drain to Source On Resistance (Note 2) rDS(ON) I
D = 12A, VGS = 5V (Figures 5, 6) - - 0.200 Ω
Input Capacitance CISS VGS = 0V, VDS = 25V, f = 1 MH z
(Figure 8) - - 900 pF
Output Capacitance COSS - - 325 pF
Reverse-Transfer Capacit ance CRSS - - 170 pF
Turn-On Delay Time td(ON) ID = 6A, VDD = 50V, RG = 6.25Ω,
VGS = 5V
(Figures 9, 10, 11)
-1550ns
Rise Time tr- 70 150 ns
Turn-Off Delay Time td(OFF) - 100 130 ns
Fall Ti me tf- 80 150 ns
Thermal Resistance Junction to Case RθJC TO-220 2.083 oC/W
Sour ce to Drain Diode Specificat ions
PARAMETER SYMBOL T EST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) VSD ISD = 6A - - 1.4 V
Diode Reverse Recovery Time trr ISD = 4A, dISD/dt = 50A/µs - 150 - ns
NOTES:
2. Pulsed: pulse duration = 80µs max, duty cycle = 2%.
3. Repetitive rating: pulse width lim ited by max imum junction temperature.
RFP12N10L