VN0610L, VN10KLS, VN2222L Vishay Siliconix N-Channel 60-V (D-S) MOSFETs with Zener Gate PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 2.5 0.27 5 @ VGS = 10 V 0.8 to 2.5 0.31 7.5 @ VGS = 10 V 0.6 to 2.5 0.23 VN0610L VN10KLS 60 VN2222L FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays D Inductive Load Drivers Zener Diode Input Protected Low On-Resistance: 3 W Ultralow Threshold: 1.2 V Low Input Capacitance: 38 pF Low Input and Output Leakage Extra ESD Protection Low Offset Voltage Low-Voltage Operation High-Speed, Easily Driven Low Error Voltage Device Marking Front View TO-226AA (TO-92) TO-92S VN0610L "S" VN 0610L xxyy S VN2222L G "S" VN 2222L xxyy D 1 S G 2 D 3 VN10KLS "S" VN 10KLS xxyy 2 "S" = Siliconix Logo xxyy = Date Code 3 "S" = Siliconix Logo xxyy = Date Code Top View Device Marking Front View 1 Top View VN0610L VN2222L VN10KLS ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol VN2222L VN0610L VN10KLS Drain-Source Voltage VDS 60 60 Gate-Source Voltage VGS 15/-0.3 15/-0.3 0.27 0.31 0.17 0.20 1 1.0 0.8 0.9 0.32 0.4 Continuous Drain Current (TJ = 150_C) _ TA= 25_C TA= 100_C Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range ID IDM TA= 25_C TA= 100_C PD RthJA TJ, Tstg 156 139 -55 to 150 Unit V A W _C/W _C Notes a. Pulse width limited by maximum junction temperature. Document Number: 70213 S-04279--Rev. F, 16-Jul-01 www.vishay.com 11-1 VN0610L, VN10KLS, VN2222L Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits VN0610L VN10KLS Symbol Test Conditions Typa V(BR)DSS VGS = 0 V, ID = 100 mA 120 60 VGS(th) VDS = VGS, ID = 1 mA 1.2 0.8 Gate-Body Leakage IGSS VDS = 0 V, VGS = 15 V 1 Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) Parameter Min VN2222L Max Min 2.5 0.6 Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage 100 VDS = 48 V, VGS = 0 V Drain-Source On-Resistanceb rDS(on) TJ = 125_C Common Source Output Conductanceb 2.5 100 10 10 500 500 VDS = 10 V, VGS = 10 V 1 VGS = 5 V, ID = 0.2 A 4 7.5 3 5 7.5 5.6 9 13.5 VGS = 10 V, ID = 0.5 A TJ = 125_C Forward Transconductanceb 60 gfs VDS = 10 V, ID = 0.5 A 300 gos VDS = 7.5 V, ID = 0.05 A 0.2 0.75 0.75 100 V nA m mA A 7.5 W 100 mS Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25 V, VGS = 0 V, f = 1 MHz 38 60 60 16 25 25 2 5 5 7 10 10 9 10 10 pF Switchingc Turn-On Time tON Turn-Off Time tOFF VDD = 15 V, RL = 23 W ID ^ 0.6 A, VGEN = 10 V RG = 25 W Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. www.vishay.com 11-2 ns VNDP06 Document Number: 70213 S-04279--Rev. F, 16-Jul-01 VN0610L, VN10KLS, VN2222L Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Ohmic Region Characteristics Output Characteristics for Low Gate Drive 50 1.0 6V VGS = 2.0 V 5V 0.8 VGS = 10 V 1.9 V ID - Drain Current (A) ID - Drain Current (mA) 40 30 1.8 V 20 1.6 V 1.5 V 10 0.6 4V 0.4 3V 0.2 1.4 V 1.2 V 2V 0 0 0 0.4 0.8 1.2 1.6 2.0 0 1 VDS - Drain-to-Source Voltage (V) 2 3 4 5 VDS - Drain-to-Source Voltage (V) Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage 0.5 7 VDS = 15 V 6 rDS(on) - On-Resistance ( ) 0.4 ID - Drain Current (A) TJ = -55_C 25_C 0.3 125_C 0.2 0.1 5 250 mA 4 3 500 mA ID = 50 mA 2 1 0 0 0 1 2 3 4 0 5 8 12 16 VGS - Gate-Source Voltage (V) On-Resistance vs. Drain Current Normalized On-Resistance vs. Junction Temperature 5 20 2.25 rDS(on) - Drain-Source On-Resistance ( ) (Normalized) rDS(on) - Drain-Source On-Resistance ( ) 4 VGS - Gate-Source Voltage (V) 4 VGS = 10 V 3 2 1 0 VGS = 10 V 2.00 1.75 ID = 0.5 A 1.50 0.1 A 1.25 1.00 0.75 0.50 0 0.2 0.4 0.6 ID - Drain Current (A) Document Number: 70213 S-04279--Rev. F, 16-Jul-01 0.8 1.0 -50 -10 30 70 110 150 TJ - Junction Temperature (_C) www.vishay.com 11-3 VN0610L, VN10KLS, VN2222L Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Threshold Region Capacitance 10 100 VGS = 0 V f = 1 MHz C - Capacitance (pF) ID - Drain Current (mA) 80 1 TJ = 150_C 0_C 100_C 25_C 0.1 60 Ciss 40 Coss 20 Crss -55_C 0.01 0 0 0.25 0.5 0.75 1.0 1.25 1.5 0 1.75 VGS - Gate-to-Source Voltage (V) 20 30 50 40 VDS - Drain-to-Source Voltage (V) Gate Charge Load Condition Effects on Switching 100 15.0 ID = 0.5 A VDD = 15 V RL = 25 W VGS = 0 to 10 V 12.5 VDS = 30 V t - Switching Time (ns) VGS - Gate-to-Source Voltage (V) 10 10.0 7.5 5.0 48 V 10 td(off) tf td(on) 2.5 tr 1 0 0 100 200 300 400 500 0.1 600 0.5 1.0 ID - Drain Current (A) Qg - Total Gate Charge (pC) Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 156_C/W 0.01 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 0.1 1 10 100 1K 10 K t1 - Square Wave Pulse Duration (sec) www.vishay.com 11-4 Document Number: 70213 S-04279--Rev. F, 16-Jul-01 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1