INSULATED GATE BIPOLAR TRANSISTOR IRGP4063PbF
IRGP4063-EPbF
PD - 97404
1www.irf.com
06/30/09
VCES = 600V
IC = 48A, TC = 100°C
tSC ≥ 5μs, TJ(max) = 175°C
VCE(on) typ. = 1.65V
Features
• Low VCE (ON) Trench IGBT Technology
• Low switching losses
• Maximum Junction temperature 175 °C
•5 μS short circuit SOA
• Square RBSOA
• 100% of the parts tested for ILM
• Positive VCE (ON) Temperature co-efficient
• Tight parameter distribution
• Lead Free Package
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
Low VCE (ON) and Low Switching losses
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
G
C
E
Gate Collector Emitter
TO-247AC
IRGP4063PbF
TO-247AD
IRGP4063-EPbF
GCE
C
GCE
C
E
C
G
n-channel
Absolute Maximum Ratings
Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 600 V
I
C
@ T
C
= 25°C Continuous Collector Current 96
h
I
C
@ T
C
= 100°C Continuous Collector Current 48
I
CM
Pulse Collector Current, V
GE
= 15V 144 A
I
LM
Clamped Inductive Load Current, V
GE
= 20V
c
192 A
V
GE
Continuous Gate-to-Emitter Voltage ±20 V
Transient Gate-to-Emitter Voltage ±30
P
D
@ T
C
= 25°C Maximum Power Dissipation 330 W
P
D
@ T
C
= 100°C Maximum Power Dissipation 170
T
J
Operating Junction and -55 to +175
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
(IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.45 °C/W
R
θCS
Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
R
θJA
Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 40
IRGP4063PbF/IRGP4063-EPbF
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Notes:
VCC = 80% (VCES), VGE = 20V, L = 200μH, RG = 10Ω.
This is only applied to TO-247AC package.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Turn-on energy is measured using the same co-pak diode as IRGP4063DPbF.
Calculated continuous current based on maximum allowable junction temperature.
Bond wire current limit is 80A. Note that current limitations arising from heating of
the device leads may occur with some lead mounting arrangements.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Ref.Fig
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600 — — V V
GE
= 0V, I
C
= 150μA
f
CT6
ΔV
(BR)CES
/ΔT
J
Temperature Coeff. of Breakdown Voltage —0.30—V/°C
V
GE
= 0V, I
C
= 1mA (25°C-175°C) CT6
— 1.65 2.14 I
C
= 48A, V
GE
= 15V, T
J
= 25°C 5,6,7
V
CE(on)
Collector-to-Emitter Saturation Voltage — 2.0 — V I
C
= 48A, V
GE
= 15V, T
J
= 150°C 8,9,10
—2.05— I
C
= 48A, V
GE
= 15V, T
J
= 175°C
V
GE(th)
Gate Threshold Voltage 4.0 — 6.5 V V
CE
= V
GE
, I
C
= 1.4mA 8,9
ΔV
GE(th)
/ΔTJ Threshold Voltage temp. coefficient — -21 — mV/°C V
CE
= V
GE
, I
C
= 1.0mA (25°C - 175°C) 10,11
gfe Forward Transconductance — 32 — S V
CE
= 50V, I
C
= 48A, PW = 80μs
I
CES
Collector-to-Emitter Leakage Current — 1.0 150 μAV
GE
= 0V, V
CE
= 600V
— 450 1000 V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
I
GES
Gate-to-Emitter Leakage Current — — ±100 nA V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Ref.Fig
Q
g
Total Gate Charge (turn-on) — 95 140 I
C
= 48A 18
Q
ge
Gate-to-Emitter Charge (turn-on) — 28 42 nC V
GE
= 15V CT1
Q
gc
Gate-to-Collector Charge (turn-on) — 35 53 V
CC
= 400V
E
on
Turn-On Switching Loss
g
— 625 1141 I
C
= 48A, V
CC
= 400V, V
GE
= 15V CT4
E
off
Turn-Off Switching Loss — 1275 1481 μJR
G
=10Ω, L= 200μH, L
S
=150nH, T
J
= 25°C
E
total
Total Switching Loss — 1900 2622 Energy losses include tail & diode reverse recovery
t
d(on)
Turn-On delay time — 60 78 I
C
= 48A, V
CC
= 400V, V
GE
= 15V CT4
t
r
Rise time — 40 56 ns R
G
= 10
, L = 200μH, L
S
= 150nH, T
J
= 25°C
t
d(off)
Turn-Off delay time — 145 176
t
f
Fall time — 35 46
E
on
Turn-On Switching Loss
g
— 1625 — I
C
= 48A, V
CC
= 400V, V
GE
=15V 12, 14
E
off
Turn-Off Switching Loss — 1585 — μJR
G
=10
, L=200μH, L
S
=150nH, T
J
= 175°C
f
CT4
E
total
Total Switching Loss — 3210 — Energy losses include tail & diode reverse recovery WF1, WF2
t
d(on)
Turn-On delay time — 55 — I
C
= 48A, V
CC
= 400V, V
GE
= 15V 13, 15
t
r
Rise time — 45 — ns R
G
= 10Ω, L = 200μH, L
S
= 150nH CT4
t
d(off)
Turn-Off delay time — 165 — T
J
= 175°C WF1
t
f
Fall time — 45 — WF2
C
ies
Input Capacitance — 3025 — pF V
GE
= 0V 17
C
oes
Output Capacitance — 245 — V
CC
= 30V
C
res
Reverse Transfer Capacitance — 90 — f = 1.0Mhz
T
J
= 175°C, I
C
= 192A 4
RBSOA Reverse Bias Safe Operating Area FULL SQUARE V
CC
= 480V, Vp =600V CT2
Rg = 10Ω, V
GE
= +15V to 0V
SCSOA Short Circuit Safe Operating Area 5 — — μsV
CC
= 400V, Vp =600V 16, CT3
Rg = 10Ω, V
GE
= +15V to 0V WF3
Conditions
IRGP4063PbF/IRGP4063-EPbF
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Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
Fig. 3 - Forward SOA
TC = 25°C, TJ ≤ 175°C; VGE =15V
Fig. 4 - Reverse Bias SOA
TJ = 175°C; VGE =15V
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80μs
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80μs
0246810
VCE (V)
0
20
40
60
80
100
120
140
160
180
200
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0246810
VCE (V)
0
20
40
60
80
100
120
140
160
180
200
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
025 50 75 100 125 150 175 200
TC (°C)
0
10
20
30
40
50
60
70
80
90
100
IC (A)
0 25 50 75 100 125 150 175 200
TC (°C)
0
50
100
150
200
250
300
350
Ptot (W)
10 100 1000
VCE (V)
1
10
100
1000
IC (A)
1 10 100 1000
VCE (V)
0.1
1
10
100
1000
IC (A)
1msec
10μsec
100μsec
Tc = 25°C
Tj = 175°C
Single Pulse
DC
IRGP4063PbF/IRGP4063-EPbF
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Fig. 7 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 80μs
0246810
VCE (V)
0
20
40
60
80
100
120
140
160
180
200
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
Fig. 8 - Typical VCE vs. VGE
TJ = -40°C
5 101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 24A
ICE = 48A
ICE = 96A
Fig. 9 - Typical VCE vs. VGE
TJ = 25°C
5 101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 24A
ICE = 48A
ICE = 96A
Fig. 10 - Typical VCE vs. VGE
TJ = 175°C
5 101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 24A
ICE = 48A
ICE = 96A
Fig. 11 - Typ. Transfer Characteristics
VCE = 50V; tp = 10μs
0 5 10 15
VGE (V)
0
20
40
60
80
100
120
140
160
180
200
ICE (A)
TJ = 25°C
TJ = 175°C
Fig. 12 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V
0 50 100 150
IC (A)
0
1000
2000
3000
4000
5000
6000
Energy (μJ)
EOFF
E
ON
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Fig. 14 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE = 15V
0 25 50 75 100 125
Rg (Ω)
1000
1500
2000
2500
3000
3500
4000
4500
5000
Energy (μJ)
EOFF
EON
Fig. 13 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V
020 40 60 80 100
IC (A)
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
Fig. 15 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE = 15V
025 50 75 100 125
RG (Ω)
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
Fig. 16 - VGE vs. Short Circuit Time
VCC = 400V; TC = 25°C
8 1012141618
VGE (V)
4
6
8
10
12
14
16
18
Time (μs)
50
100
150
200
250
300
350
400
Current (A)
Fig. 17 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
Fig. 18 - Typical Gate Charge vs. VGE
ICE = 48A; L = 600μH
020 40 60 80 100
VCE (V)
10
100
1000
10000
Capacitance (pF)
Cies
Coes
Cres
0 255075100
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VGE, Gate-to-Emitter Voltage (V)
VCES
= 300V
VCES
= 400V
IRGP4063PbF/IRGP4063-EPbF
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Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.0872 0.000114
0.1599 0.001520
0.2020 0.020330
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
τ
τC
Ci i/Ri
Ci= τi/Ri
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Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit
0
1K
VCCDUT
L
L
Rg
80 V
DUT VCC
+
-
Fig.C.T.5 - Resistive Load Circuit
Rg
VCC
DUT
R =
VCC
ICM
G force
C sens
e
100K
DUT
0.0075μF
D1 22K
E force
C force
E sense
Fig.C.T.6 - BVCES Filter Circuit
Fig.C.T.3 - S.C. SOA Circuit
DC
4X
DUT
VCC
SCSOA
Fig.C.T.4 - Switching Loss Circuit
L
Rg
VCC
DUT /
DRIVER
diode clamp /
DUT
-5V
IRGP4063PbF/IRGP4063-EPbF
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Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
-100
0
100
200
300
400
500
600
700
-0.40 0.10 0.60 1.10
Time(µs)
V
CE
(V)
-20
0
20
40
60
80
100
120
140
E
OFF
Loss
5% V
CE
5% I
CE
90% I
CE
tf
-100
0
100
200
300
400
500
600
6.20 6.40 6.60 6.80 7.00
Ti me (µs)
V
CE
(V )
-20
0
20
40
60
80
100
120
E
ON
TEST
CURRE
90% test
10% test
5% V
CE
tr
Fig. WF3 - Typ. S.C. Waveform
@ TJ = 25°C using Fig. CT.3
-100
0
100
200
300
400
500
600
-5.00 0.00 5.00 10.00
time (µS)
V
CE
(V )
-100
0
100
200
300
400
500
600
I
CE
(A )
V
CE
I
CE
IRGP4063PbF/IRGP4063-EPbF
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TO-247AC Part Marking Information
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
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TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
IRGP4063PbF/IRGP4063-EPbF
10 www.irf.com
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 06/09
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
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TO-247AD Part Marking Information
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/