IGW08T120
TrenchStop® Series q
Power Semiconductors 1 Rev. 2.6 Nov. 09
Low Loss IGBT in TrenchStop® and Fieldstop technology
• Short circuit withstand time – 10µs
• Designed for :
- Frequency Converters
- Uninterrupted Power Supply
• TrenchStop® and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type VCE I
C VCE(sat),Tj=25°C Tj,max Marking Code Package
IGW08T120 1200V 8A 1.7V 150°CG08T120 PG-TO-247-3
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCE 1200 V
DC collector current
TC = 25°C
TC = 100°C
IC
16
8
Pulsed collector current, tp limited by Tjmax ICpuls 24
Turn off safe operating area
VCE ≤ 1200V, Tj ≤ 150°C
- 24
A
Gate-emitter voltage VGE ±20 V
Short circuit withstand time2)
VGE = 15V, VCC ≤ 1200V, Tj ≤ 150°C
tSC 10
µs
Power dissipation
TC = 25°C
Ptot 70 W
Operating junction temperature Tj -40...+150
Storage temperature Tstg -55...+150
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
PG-TO-247-3
IGW08T120
TrenchStop® Series q
Power Semiconductors 2 Rev. 2.6 Nov. 09
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance,
junction – case
RthJC 1.7
Thermal resistance,
junction – ambient
RthJA 40
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Value
Parameter Symbol Conditions
min. typ. max.
Unit
Static Characteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V, IC=0.5mA 1200 - -
Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC=8A
Tj=25°C
Tj=125°C
Tj=150°C
-
-
-
1.7
2.0
2.2
2.2
-
-
Gate-emitter threshold voltage VGE(th) IC=0.3mA,VCE=VGE 5.0 5.8 6.5
V
Zero gate voltage collector current
ICES VCE=1200V,
VGE=0V
Tj=25°C
Tj=150°C
-
-
-
-
0.2
2.0
mA
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V, IC=8A - 5 - S
Integrated gate resistor RGint none
Dynamic Characteristic
Input capacitance Ciss - 600 -
Output capacitance Coss - 36 -
Reverse transfer capacitance Crss
VCE=25V,
VGE=0V,
f=1MHz - 28 -
pF
Gate charge QGate VCC=960V, IC=8A
VGE=15V
- 53 - nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
LE - 13 - nH
Short circuit collector current1) IC(SC) VGE=15V,tSC≤10µs
VCC = 600V,
Tj = 25°C
- 48 - A
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
IGW08T120
TrenchStop® Series q
Power Semiconductors 3 Rev. 2.6 Nov. 09
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
Parameter Symbol Conditions
min. typ. max.
Unit
IGBT Characteristic
Turn-on delay time td(on) - 40 -
Rise time tr - 23 -
Turn-off delay time td(off) - 450 -
Fall time tf - 70 -
ns
Turn-on energy Eon - 0.67 -
Turn-off energy Eoff - 0.7 -
Total switching energy Ets
Tj=25°C,
VCC=600V,IC=8A,
VGE=-15/15V,
RG=81Ω,
L
σ
2)=180nH,
C
σ
2)=39pF
Energy losses include
“tail” and diode
reverse recovery. - 1.37 -
mJ
Switching Characteristic, Inductive Load, at Tj=150 °C
Value
Parameter Symbol Conditions
min. typ. max.
Unit
IGBT Characteristic
Turn-on delay time td(on) - 40 -
Rise time tr - 26 -
Turn-off delay time td(off) - 570 -
Fall time tf - 140 -
ns
Turn-on energy Eon - 1.08 -
Turn-off energy Eoff - 1.2 -
Total switching energy Ets
Tj=150°C,
VCC=600V, IC=8A,
VGE=-15/15V,
RG= 81Ω,
L
σ
2)=180nH,
C
σ
2)=39pF
Energy losses include
“tail” and diode
reverse recovery. - 2.28 -
mJ
2) Leakage inductance L
σ
and Stray capacity Cσ due to dynamic test circuit in Figure E.
IGW08T120
TrenchStop® Series q
Power Semiconductors 4 Rev. 2.6 Nov. 09
IC, COLLECTOR CURRENT
10Hz 100Hz 1kHz 10kHz 100kHz
0A
5A
10A
15A
2
0A
TC=110°C
TC=80°C
IC, COLLECTOR CURRENT
1V 10V 100V 1000V
0,01A
0,1A
1A
10A
DC
10µs
tp=2µs
50µs
500µs
20ms
150µs
f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 150°C, D = 0.5, VCE = 600V,
VGE = 0/+15V, RG = 81Ω)
Figure 2. Safe operating area
(D = 0, TC = 25°C,
Tj ≤150°C;VGE=15V)
Ptot, POWER DISSIPATION
25°C 50°C 75°C 100°C 125°C
0W
10W
2
0W
30W
4
0W
50W
6
0W
70W
IC, COLLECTOR CURRENT
25°C 75°C 125°C
0A
5A
10A
15A
TC, CASE TEMPERATURE TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(Tj ≤ 150°C)
Figure 4. Collector current as a function of
case temperature
(VGE ≥ 15V, Tj ≤ 150°C)
Ic
Ic
IGW08T120
TrenchStop® Series q
Power Semiconductors 5 Rev. 2.6 Nov. 09
IC, COLLECTOR CURRENT
0V 1V 2V 3V 4V 5V 6V
0A
5A
1
0A
1
5A
2
0A
15V
7V
9V
11V
13V
VGE=17V
IC, COLLECTOR CURRENT
0V 1V 2V 3V 4V 5V 6V
0A
5A
10A
15A
20A
15V
7V
9V
11V
13V
VGE=17V
VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
Figure 6. Typical output characteristic
(Tj = 150°C)
IC, COLLECTOR CURRENT
0V 2V 4V 6V 8V 10V 12V
0A
5A
10A
15A
2
0A
25°C
TJ=150°C
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
-50°C 0°C 50°C 100°C
0,0V
0,5V
1,0V
1,5V
2,0V
2,5V
3,0V
IC=8A
IC=15A
IC=5A
IC=2.5A
VGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristic
(VCE=20V)
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
IGW08T120
TrenchStop® Series q
Power Semiconductors 6 Rev. 2.6 Nov. 09
t, SWITCHING TIMES
5A 10A 15A
1ns
10ns
100ns
tr
td(on)
tf
td(off)
t, SWITCHING TIMES
5
Ω
5
0Ω
1
00Ω 150Ω 200Ω
1 ns
10 ns
100 ns
tf
tr
td(off)
td(on)
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, RG=81,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, IC=8A,
Dynamic test circuit in Figure E)
t, SWITCHING TIMES
0°C 50°C 100°C 150°C
10ns
100ns
tr
tf
td(on)
td(off)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
-50°C 0°C 50°C 100°C 150°C
0V
1V
2V
3V
4V
5V
6V
7V
min.
typ.
max.
TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE=600V,
VGE=0/15V, IC=8A, RG=81,
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 0.3mA)
IGW08T120
TrenchStop® Series q
Power Semiconductors 7 Rev. 2.6 Nov. 09
E, SWITCHING ENERGY LOSSES
5A 10A 15A
0
,0mJ
2
,0mJ
4
,0mJ
6
,0mJ
Ets*
Eoff
*) Eon and Etsinclude losses
due to diode recovery
Eon*
E, SWITCHING ENERGY LOSSES
5Ω 50Ω 100Ω 150Ω 200Ω
0,0 mJ
0,4 mJ
0,8 mJ
1,2 mJ
1,6 mJ
2,0 mJ
2,4 mJ
2,8 mJ
3,2 mJ Ets*
Eon*
*) Eon and Ets include losses
due to diode recovery
Eoff
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, RG=81,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, IC=8A,
Dynamic test circuit in Figure E)
E, SWITCHING ENERGY LOSSES
25°C 50°C 75°C 100°C 125°C
.0mJ
.5mJ
1.0mJ
1.5mJ
.0mJ
Ets*
Eon*
*) Eon and Ets include losses
due to diode recovery
Eoff
E, SWITCHING ENERGY LOSSES
400V 500V 600V 700V 800V
0mJ
1mJ
2mJ
3mJ
Ets*
Eon*
*) Eon and Ets include losses
due to diode recovery
Eoff
TJ, JUNCTION TEMPERATURE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE=600V,
VGE=0/15V, IC=8A, RG=81,
Dynamic test circuit in Figure E)
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ=150°C,
VGE=0/15V, IC=8A, RG=81,
Dynamic test circuit in Figure E)
Eon*
Eoff
Eon*
Eoff
Eon*
Eoff
IGW08T120
TrenchStop® Series q
Power Semiconductors 8 Rev. 2.6 Nov. 09
VGE, GATE-EMITTER VOLTAGE
0nC 25nC 50nC
0V
5V
10V
15V
960V
240V
c, CAPACITANCE
0V 10V 20V
10pF
100pF
1nF
Crss
Coss
Ciss
QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge
(IC=8 A)
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
tSC, SHORT CIRCUIT WITHSTAND TIME
12V 14V 16V
0µs
5µs
10µs
15µs
IC(sc), short circuit COLLECTOR CURRENT
12V 14V 16V 18V
0A
25A
50A
75A
VGE, GATE-EMITTETR VOLTAGE VGE, GATE-EMITTETR VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=600V, start at TJ=25°C)
Figure 20. Typical short circuit collector
current as a function of gate-
emitter voltage
(VCE ≤ 600V, Tj ≤ 150°C)
IGW08T120
TrenchStop® Series q
Power Semiconductors 9 Rev. 2.6 Nov. 09
VCE, COLLECTOR-EMITTER VOLTAGE
0V
2
00V
4
00V
6
00V
0A
10A
20A
30A
1.5us
1us
0.5us
0us
IC
VCE
IC, COLLECTOR CURRENT
0V
200V
400V
600V
0A
10A
2
0A
3
0A
1.5us1us0.5us
0us
IC
VCE
t, TIME t, TIME
Figure 21. Typical turn on behavior
(VGE=0/15V, RG=81, Tj = 150°C,
Dynamic test circuit in Figure E)
Figure 22. Typical turn off behavior
(VGE=15/0V, RG=81, Tj = 150°C,
Dynamic test circuit in Figure E)
ZthJC, TRANSIENT THERMAL RESISTANCE
10µs 100µs 1ms 10ms 100ms
1
0-2K/W
1
0-1K/W
100K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
tP, PULSE WIDTH
Figure 23. IGBT transient thermal resistance
(D = tp / T)
R,(K/W)
τ
, (s)
0.187 1.73*10-1
0.575 2.75*10-2
0.589 2.57*10-3
0.350 2.71*10-4
C1=
τ
1/R1
R1R2
C2=
τ
2/R2
IGW08T120
TrenchStop® Series q
Power Semiconductors 10 Rev. 2.6 Nov. 09
IGW08T120
TrenchStop® Series q
Power Semiconductors 11 Rev. 2.6 Nov. 09
Figure A. Definition of switching times
Figure B. Definition of switching losses
p(t)
12 n
T(t)
j
τ
1
1
τ
2
2
n
n
τ
T
C
rr
r
r
rr
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance L
σ
=180nH
and Stray capacity Cσ =39pF.
IGW08T120
TrenchStop® Series q
Power Semiconductors 12 Rev. 2.6 Nov. 09
Edition 2006-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 11/18/09.
All Rights Reserved.
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The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
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