2SA1430
2006-11-09
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1430
Strobe Flash Applications
Medium Power Amplifier Applications
High DC current gain and excellent hFE linearity
: hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A)
: hFE (2) = 60 (min), 120 (typ.) (VCE = 1 V, IC = 4 A)
Low saturation voltage: VCE (sat) = 0.5 V (max)
(IC = 2 A, IB = 50 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 20 V
VCES 20
Collector-emitter voltage
VCEO 10
V
Emitter-base voltage VEBO 6 V
DC IC 2
Collector current Pulsed
(Note 1)
ICP 4
A
Base current IB 2 A
Collector power dissipation PC 1000 mW
Junction temperature Tj 150 °C
Storage temperature range Tstg 55 to 150 °C
Note 1: Pulse width = 10 ms (max), duty cycle = 30% (max)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA 2-7D101A
Weight: 0.2 g (typ.)
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2006-11-09
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Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = 20 V, IE = 0 100 nA
Emitter cut-off current IEBO V
EB = 6 V, IC = 0 100 nA
Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 10 V
Emitter-base breakdown voltage V (BR) EBO IE = 1 mA, IC = 0 6 V
hFE (1)
(Note 3)
VCE = 1 V, IC = 0.5 A 140 600
DC current gain
hFE (2) V
CE = 1 V, IC = 4 A 60 120
Collector-emitter saturation voltage VCE (sat) IC = 2 A, IB = 50 mA 0.20 0.50 V
Base-emitter voltage VBE V
CE = 1 V, IC = 2 A 0.83 1.5 V
Transition frequency fT V
CE = 1 V, IC = 0.5 A 140 MHz
Collector output capacitance Cob V
CB = 10 V, IE = 0, f = 1 MHz 50 pF
Note 3: hFE (1) classification A: 140 to 280, B: 200 to 400, C: 300 to 600
Marking
A1430
Lot No.
A
line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Characteristics
indicator
Part No. (or abbreviation code)
2SA1430
2006-11-09
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Collector power dissipation PC (W)
Collector-emitter saturation voltage
VCE (sat) (V)
Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (A)
Base-emitter voltage VBE (V)
IC – VBE
Collector current IC (A)
Collector current IC (A)
hFE – IC
DC current gain hFE
Collector current IC (A)
VCE (sat) – IC
Ambient temperature Ta (°C)
PC – Ta
Safe Operating Area
Collector current IC (A)
Collector-emitter voltage VCE (V)
0
0
0.2
0.4
0.6
0.8
1.0
1.2
20 40 60 80 100 120 160 140
0
0
Common emitter
Ta = 25°C
4
1.6 2.4 3.2 4.0
30
100
50
3
5
20
IB = 1 mA
10
0.8
1
2
3
2
0.03
500
Common emitter
VCE = 1 V
30
50
100
300
3000
0.1 1
25
25
Ta = 100°C
3 0.3 0.01
1000
Common emitter
VCE = 1 V
0
2
3
0.8 1.2
Ta = 100°C 25
2.01.6 0.4
0
1
4
25
0.01 0.03 0.1 0.3 3
0.01
0.03
0.1
0.3
0.5
0.05
1
Common emitter
IC/IB = 40
Ta = 100°C
25
25
1
IC max (pulsed)*
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
IC max (continuous)
DC operation
Ta = 25°C
10 ms* t = 1 ms*
0.03 0.1 0.3 1 30
0.01
0.03
0.1
0.3
0.5
0.05
1
3 10
3
5
10
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2006-11-09
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RESTRICTIONS ON PRODUCT USE 20070701-EN
The information contained herein is subject to change without notice.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
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(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
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