© 2004 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGE(th) IC= 250 µA, VCE = VGE 2.5 5.0 V
ICES VCE = VCES TJ = 25°C50µA
VGE = 0 V TJ = 150°C1mA
IGES VCE = 0 V, VGE = ±20 V ±100 nA
VCE(sat) IC= 24 A, VGE = 15 V TJ = 25°C 1.8 V
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 600 V
VCGR TJ= 25°C to 150°C; RGE = 1 MΩ600 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C (limited by leads) 70 A
IC110 TC= 110°C30A
ICM TC= 25°C, 1 ms 150 A
SSOA VGE = 15 V, TVJ = 125°C, RG = 10 Ω ICM = 60 A
(RBSOA) Clamped inductive load @ ≤ 600 V
PCTC= 25°C 190 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
MdMounting torque 1.13/10Nm/lb.in.
Weight 4g
DS99167(04/04)
G = Gate, C = Collector,
E = Emitter, TAB = Collector
Features
zMedium frequency IGBT
zSquare RBSOA
zHigh current handling capability
zMOS Gate turn-on
- drive simplicity
Applications
zPFC circuits
zUninterruptible power supplies (UPS)
zSwitched-mode and resonant-mode
power supplies
zAC motor speed control
zDC servo and robot drives
zDC choppers
VCES = 600 V
IC25 = 70 A
VCE(sat) < 1.8 V
tfi typ = 82 ns
HiPerFASTTM IGBT
Optimized for 10-25 KHz hard
switching and up to 150 KHz
resonant switching
IXGP 30N60B2
Advance Technical Data
TO-220 (IXSP)
GCE
C (TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGP 30N60B2
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC= 24 A; VCE = 10 V, 18 26 S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies 1500 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 115 pF
Cres 40 pF
Qg66 nC
Qge IC = 24 A, VGE = 15 V, VCE = 300 V 9 nC
Qgc 22 nC
td(on) 13 ns
tri 15 ns
td(off) 110 200 ns
tfi 82 150 ns
Eoff 0.32 0.6 mJ
td(on) 13 ns
tri 17 ns
Eon 0.22 mJ
td(off) 200 ns
tfi 150 ns
Eoff 0.9 mJ
RthJC 0.65 K/W
RthCH 0.25 K/W
Inductive load, TJ = 25°°
°°
°C
IC = 24 A, VGE = 15 V
VCE = 400 V, RG = 5 Ω
Inductive load, TJ = 125°°
°°
°C
IC = 24 A, VGE = 15 V
VCE = 400 V, RG = 5 Ω
Pins: 1 - Gate 2 - Drain
3 - Source 4 - Drain
© 2004 IXYS All rights reserved
Fig. 2. Extended Output Characteristics
@ 25 deg. C
0
50
100
150
200
250
300
0 2 4 6 8 10 12 14 16 18
V
C E
- Volts
I
C
- Amperes
V
GE
= 15V
5V
7V
9V
11V
13V
Fig. 3. Output Characteristics
@ 125 Deg. C
0
5
10
15
20
25
30
35
40
45
50
0.5 1 1.5 2 2.5 3
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
5V
7V
9V
Fig. 1. Output Characteristics
@ 25 Deg. C
0
5
10
15
20
25
30
35
40
45
50
0.511.5 22.53
V
C E
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
7V
5V
9V
Fig. 4. Dependence of V
CE(sat)
on
Temperature
0.7
0.8
0.9
1.0
1.1
1.2
1.3
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
C E (sat)
- Normalize
d
I
C
= 24A
I
C
= 12A
V
GE
= 15V
I
C
= 48A
Fig. 5. Collector-to-Em itter Voltage
vs. Gate-to-Em itter voltage
1.2
1.5
1.8
2.1
2.4
2.7
3
3.3
3.6
3.9
4.2
567891011121314151617
V
G E
- Volts
V
C E
- Volts
T
J
= 25ºC
I
C
= 48A
24A
12A
Fig. 6. Input Admittance
0
25
50
75
100
125
150
175
200
225
250
45678 910111213
V
G E
- Volts
I
C
- Amperes
T
J
= -40ºC
25ºC
125ºC
IXGP 30N60B2
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGP 30N60B2
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
Fig. 7. Transconductance
0
5
10
15
20
25
30
35
40
45
0 25 50 75 100 125 150 175 200 225 250
I
C
- Amperes
g
f s
- Siemens
TJ = -40ºC
25ºC
125ºC
Fig. 8. Dependence of Turn-Off
En e r g y o n R
G
0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
0 1020304050607080
R
G
- Ohms
E
off
- milliJoules
IC = 12A
TJ = 125ºC
VGE = 15V
VCE = 400V
IC = 24A
IC = 48A
Fig. 9. Dependence of Turn-Off
En e r g y
on I
C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
10 15 20 25 30 35 40 45 50
I
C
- Amperes
E
off
- MilliJoules
RG = 5Ω
VGE = 15V
VCE = 400V
TJ = 125ºC
TJ = 25ºC
Fig. 10. Dependence of Turn-Off
Energy on Temperature
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
off
- milliJoules
IC = 48A
RG = 5Ω
VGE = 15V
VCE = 400V
IC = 24A
IC = 12A
Fig. 11. Dependence of Turn-Off
Sw itching Time on R
G
100
200
300
400
500
600
700
0 1020304050607080
R
G
- Ohms
Switching Time - nanosecond
IC = 24A
t
d(off)
t
fi
- - - - - -
T
J = 125ºC
VGE = 15V
VCE = 400V
IC = 12A
IC = 48A
Fig. 12. Dependence of Turn-Off
Sw itching Tim e
on I
C
60
80
100
120
140
160
180
200
220
240
260
10 15 20 25 30 35 40 45 50
I
C
- Amperes
Switching Time - nanosecond
t
d(off)
t
fi
- - - - - -
RG = 5Ω
VGE = 15V
VCE = 400V
TJ = 125ºC
TJ = 25ºC
© 2004 IXYS All rights reserved
Fig. 14. Gate Charge
0
3
6
9
12
15
0 10203040506070
Q
G
- nanoCoulombs
V
G E
- Volts
V
CE
= 300V
I
C
= 24A
I
G
= 10mA
Fig. 15. Capacitance
10
100
1000
10000
0 5 10 15 20 25 30 35 40
V
C E
- Volts
Capacitance - p F
C
ies
C
oes
C
res
f = 1 MHz
Fig. 13. Dependence of Turn-Off
Switching Time on Temperature
80
100
120
140
160
180
200
220
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
Switching Time - nanosecond
I
C
= 12A
24A
48A
t
d(off)
t
fi
-
- - - - -
R
G
= 5Ω
V
GE
= 15V
V
CE
= 400V
I
C
= 48A
24A
12A
Fig. 16. Maxim um Transient Therm al Resistance
0.1
1.0
1 10 100 1000
Pulse Width - milliseconds
R
(th) J C
-
(ºC/W)
0.5
IXGP 30N60B2
