VUO121-16NO1
3~ Rectifier Bridge
Standard Rectifier Module
17
9-12
13
5-8
1-4
16
14
Part number
VUO121-16NO1
Features / Ad vantages: Applications: Package:
● Package with DCB ceramic
● Reduced weight
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
● Diode for main rectification
● For three phase bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
E2-Pack
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Height: 17 mm
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
● Isolation Voltage: V~
3600
RRM
1600
3~
Rectifier
I120
FSM
700
DAV
V=V
A
A
=
=
I
IXYS reserves the right to change limits, conditions and dimensions. 20130205cData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUO121-16NO1
V = V
kA²s
kA²s
kA²s
kA²s
Symbol Definition
Ratings
typ. max.
I
R
V
IA
V
F
1.19
R0.65 K/W
R
min.
120
V
RSM
V
100T = 25°C
VJ
T = °C
VJ
mA1.5V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
105
P
tot
190 WT = 25°C
C
RK/W
40
1600
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions Unit
1.64
T = 25°C
VJ
150
V
F0
V0.80T = °C
VJ
150
r
F
7.6 mΩ
V1.12T = °C
VJ
I = A
F
V
40
1.70
I = A
F
120
I = A
F
120
threshold voltage
slope resistance for power loss calculation only
µA
125
V
RRM
V1600
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
27
j
unction capacitance V = V;400 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
150
700
755
1.77
1.73
A
A
A
A
595
645
2.45
2.37
1600
DAV
120° rect.
bridge output current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
1700
0.10
IXYS reserves the right to change limits, conditions and dimensions. 20130205cData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUO121-16NO1
Ratings
XXXXXXXXXX yywwx
Logo UL Part number Date Code
2D Data Matrix
Location
Package
T
VJ
°C
M
D
Nm6
mounting torque 3
T
stg
°C125
storage temperature -40
Weight g176
Symbol Definition typ. max.min.Conditions
virt ua l j un ctio n temp eratu re
Unit
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
6.0
12.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current 200 A
per terminal
150-40
terminal to terminal
E2-Pack
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
VUO121-16NO1 496278Box 6VUO121-16NO1Standard
3000
3600
ISOL
threshold voltage V0.8
mΩ
V
0 max
R
0 max
slope resistance * 4.5
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Rectifier
150°C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20130205cData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUO121-16NO1
17
9-12
13
5-8
1-4
16
14
Outlines E2-Pack
IXYS reserves the right to change limits, conditions and dimensions. 20130205cData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUO121-16NO1
0.001 0.01 0.1 1
200
300
400
500
600
23456789
1
100
1000
10000
0 1020304050
0
20
40
60
0 25 50 75 100 125 150 175
1 10 100 1000 10000
0.01
0.1
1
[A
2
s]
I
FSM
[A]
t[s]
P
tot
[W]
I
dAVM
[A] T
amb
[°C]
t[ms]
0 25 50 75 100 125 150 175
0
20
40
60
80
100
120
140
I
dAV
[A]
Z
thJC
[K/W]
50Hz, 80% V
RRM
T
VJ
= 150°C
0.00.51.01.52.0
0
40
80
120
160
I
F
[A]
V
F
[V]
T
VJ
= 45°C
T
VJ
=150°C
T
VJ
= 45°C
T
VJ
=125°C
T
VJ
= 25°C
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current
t[ms]
Fig. 3 I
2
t versus time per diode
Fig. 4 Power dissipation vs. direct output current and ambient temperature
T
C
[°C]
Fig. 5 Max. forward current vs.
case temperature
Fig. 6 Transient thermal impedance junction to case
R
ii
0.085 0.012
0.041 0.007
0.309 0.036
0.215 0.102
T
VJ
=150°C
R
thA
:
0.2 K/W
0.4 K/W
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
DC =
1
0.5
0.4
0.33
0.17
0.08
DC =
1
0.5
0.4
0.33
0.17
0.08
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20130205cData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
