YVYAYPNPLESHY 7 WAYBEIYUAD SILICON PNP EPITAXIAL MESA TRANSISTOR (TENTATIVE) Ok ARS ARIE Audio Power Amplifier Applications etl? RIBRMAKEV.: Po=100W CT c= 25C) : Vczo=120V (2SA679) Vcro=100V (2SA680) 28C1079,28C100D av FV AYRVIeO ET, GTEC 2SA679, 2SA680 Unit in mm Complementary to 2SC1079 and 2SC1080. 30.2 0204 16.851 6-58 BAKREM MAXIMUM RATINGS (Ta=25C) 88 1 Characteristic Symbol | Rating Unit nis 7 Ws 2 2SA679 120 1@ arts 2U27R+N ARE }-_ Vero Vv 2SA680 100 +0.08 40.0 Max 4.09945 AVR +xwi yk 2SA679 |, 120 y ce CEO 1. BASE fl OE 28A680 100 LBASE miyh x ARSE Vano 5 Vv COLLECTOR (CASE) aVv7 RET Ic 12 A JEDEC TO-3 Ziy 2 Tt Ig 12 A EIAJ TC-3, TB-3 DUD BBR Chon") Po 100 W TOSHIBA 2-19 3 Tey VWACBLEA Ly . Cc BeETRBE T 150 MOUNTING KIT NO. AC73 RARE Tsg 65~150 C BAAtet: ELECTRICAL CHARACTERISTICS (Ta=25C) Characteristic Symbol Condition | Min. | Typ. | Max. | Unit 2VA7RL @ Be Icso Vos=d0V, In=0 _ _ 100 wa Hiy RL Web Tgpo Ves=5V, Ic=0 _ | 100 BA 2vUOPRe ems y RH 2S A679 __ _ 120 _ _ REE SA680 Vero ceo Ic =100mA, Ip=0 yoo = = Vv miy Re N~ ARISE 2S A679 __ _ 5 _ =| EBLE SA 080 VBR) EBO Tr 10mA, Ic=0 _ = = Vv (Note) | Vog=5V, Io=2A =oV, lo= 40 _ 140 ARETE her(1) hre(2) Vor=5V, Ic=7A 15 _ AVIR+ziy RRA Vor(sat) Ic=10A, In=1A _ _ 3.0 V A-A+= 8 y SERVE Vee Voer=5V, Ic=10A _- |; -2.5 Vv bIYVYy 2 VIER fr Vor=5V, Ic=2A _ 6 _ MHz 2VIFHDASB Con Vcp=10V, In=0, f=1MHz _ 900 _ pF Note 3 hre(IWl kD FROLIICAL, BARR L CH Pc-Te dEt, According to the value of hrs(1), the 2SA679 and 2SA680 are classified as follows. Classification | Min. Max. 2SA679R 2SA680-R 40 80 2SA679Y 2SA680Y 70 140 150 ee > oOo AIL xR Pe (W) a 185 100 4A Te (C) 150 200