* Available in limited quantities SEMIKRON . INC use o Mf aaauu72 coorssa 3 ff | 2$-10 SEMIKRON | Vasm | VaRM (x ttavs (maximum values for continuous operation) Thyristors ! Vorm | \dt 1400 A 1600 A - SKT 600 itav (sin. 180; Tcase = ...; DSC) SKT 760 v | Vv | V/us 890 A (57 C) 1020 A (66C) 500 | 400 | 500 SKT600/04 D SKT 760/04 D ; 900 800 500 SKT 600/08 D SKT 760/08 D 1300 | 1200 500 SKT 600/12 D SKT 760/12D 1000 SKT600/12E SKT 760/12E 1500 | 1400 | 1000 SKT 600/14 E SKT 760/14 E 1700 | 1600 500 SKT 600/16 D SKT 760/16 D 1000 SKT 600/16 E SKT 760/16 E 1900 | 1800 500 SKT 600/18 D* SKT 760/18 D* Symbol ; Conditions SKT 600 SKT 760 | lav | sin. 180; (Tcase = ...); DSC GOA (85C)|760A(80C} | eatures Itsm Ty = 25C 11500 A 15000A @ Hermetic metal cases with 3 a fires onan oma |. mene meee : v= 93 \5 8 Capsule packages for double 4 Ty = 125C 500000 A*s} 845000 As sided cooling 4 toa Ty = 25C;la = 1Asdic/dt = 1A/ps typ. 1 ps e Shallow design with single 4 sided cooling 4 tor Vp = 0,67-Vprm typ. 2s @ International standard cases .| (di/dt)cr| f = 50...60Hz 125 A/ us e Off-state and reverse voltages IH Ty = 25C; typ./max. 150 mA/300 mA up to 1800 V t 1 _ oe eens aN 200 4 ms Typical Applications _ * @ DC motor control Vr Ty = 25C; br = 2400A; max. 2,0V 1,65V (e. g. for machine tools) Varo) | Ty = 125C 1,0V 0,92V (og for battery cha ing) rT Ty = 125C 0,4mQ 0,9 mo e AC controllers arg Ino, tap | Ty = 125C; Vpp = Vorm;Vap = Vanm | 80mA 80 mA (e. g. for temperature control) Vet Ty = 25C 3V let Ty = 25C 200 mA Veo Ty = 125C 0,25 V lap Ty = 125C 10mA Rthjc cont. DSC 0,038 C/W sin. 180; DSC/SSC 0,040/0,082 C/W rec. 120; DSC/SSC 0,045/0,093 C/W Rtheh DCS/SSC 0,007/0,014C/W Ty -40... +125 C Tstg -40...+180C F SI units 10... 13 KN US units 2200 ... 2850 Ibs. w 2,40g Case B10 by SEMIKRONFig. 1b Power dissipation vs. on-state current and ambient temperature 1200 750 A 600 A sco 500 ~ 400 250 hav Nav 0 0 Tease 50 100 C 150 0 lease 50 100 SEMIKRON INC T-aS -/9 ASE D | 8156671 gooassy-s ff 2000 2000 Ww w 1500 1500 4000 1000 500 500 ociw Pray Pray 0 Olyy 200 400 600 800 A 0 Tomb 50 100 c 150 Fig. 1a Power dissipation vs. on-state current and ambient temperature 2000 2000 WI-SKT 760 1500 1500 1000 1000 500 500 Pray Sciw Pray 0 6 tay: 300 600 300 A 0 Tomb 50 100 c 150 c 180 Fig. 2a Rated on-state current vs. case temperature Fig. 2b Rated on-state current vs. case temperature B3-46 by SEMIKRON Semen ret ie eet temo rteiay minSEMIKRON INC 1-25- /9 use o ff a13u471 coousss. 7 SEMIKRON a aS, 1500 1000 "av oO O Tease 50 100 150 Fig. 2c Rated on-state current vs. case temperature 4000 Cl SKT GOO 2000 SKT 760 =125 1000 600 400 200 100 Qn 40 1-St2 4 6 10 20 40 60Ajps100 Fig. 3 Recovered charge vs. current decrease O15 7s SKT GOO SKT 760 =0,078 C/W 040 sin. =0,038 C/W: \ 0,05 Rthje 0 0 6 30 60 90 120 150 180 Fig. 5 Thermal resistance vs. conduction angle 1000 800 600 400 200 lrav Qo 0 lease 50 100 c (150 Fig. 2d Rated on-state current vs. case temperature 10 SEE SKT 600 SKT 760 10 Z(thije JA a Aha atte 10% Zuh)z Dsc SSC sin. rec. | sin. rec, 0,002/0,006] 0, 13 0,003} 0,007) 0,007] 0,015 Zhe 0,011/0,0 14/0,02110,029 4 0,0 18] 0,021/0,041| 0,046 107 + 107 107 10 10' 10? 409 s 104 Fig. 4 Transient thermal impedance vs. time 3000 A 2000 1000 iT 0 0 T 05 1 15 2 V 25 Fig. 6 a On-state characteristics by SEMIKRON B3-47SEMIKRON INC T=AS- [J use o ff azacu71 oooss..9 ff kW 2000 1000 it ~ Pray o 0 Oo vy 05 1 1,5 v2 0 Irav 0.5 1 4,5 kA Fig. 6 b On-state characteristics Fig. 7 a Power dissipation vs. on-state current kW o 1.8 (A) 25C 125C 1,6 11500 | 10000 08 1 P 06 TAV 0 04 0 lw 05 1 1,5 2 kA 25 10 + 101 102 ms Fig. 7 b Power dissipation vs. on-state current Fig. 8 Surge overload current vs. time 3 2(- SKT 600 VT SKT 760 ol 3 <1 0 2 ig2 345 2345 2345 A10 Fig. 9 Gate trigger characteristics 2 103 B3-48 by SEMIKRON bate 11 anbasttind