2SA1204
2011-02-04
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1204
Audio Frequency Amplifier Applications
High DC current gain: hFE(1) = 100 to 320
Suitable for output stage of 1 watts amplifier
Small flat package
PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
Complementary to 2SC2884
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 35 V
Collector-emitter voltage VCEO 30 V
Emitter-base voltage VEBO 5 V
Collector current IC 800 mA
Base current IB 160 mA
PC 500
Collector power dissipation PC
(Note 1)
1000
mW
Junction temperature Tj 150 °C
Storage temperature range Tstg 55 to 150 °C
Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 mm t)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
PW-MINI
JEDEC
JEITA SC-62
TOSHIBA 2-5K1A
Weight: 0.05 g (typ.)
2SA1204
2011-02-04
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Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO VCB = 35 V, IE = 0 0.1 μA
Emitter cut-off current IEBO VEB = 5 V, IC = 0 0.1 μA
Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 30 V
hFE (1)
(Note 3)
VCE = 1 V, IC = 100 mA 100 320
DC current gain
hFE (2) V
CE = 1 V, IC = 700 mA 35
Collector-emitter saturation voltage VCE (sat) IC = 500 mA, IB = 20 mA 0.7 V
Base-emitter voltage VBE VCE = 1 V, IC = 10 mA 0.5 0.8 V
Transition frequency fT VCE = 5 V, IC = 10 mA 120 MHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 19 pF
Note 3: hFE (1) classification O: 100 to 200, Y: 160 to 320
Marking
Note 4: A line beside a Lot No. identifies the indication of product Labels.
Without a line: [[Pb]]/INCLUDES > MCV
With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
R
Part No. (or abbreviation code)
Lot No.
Note 4
Characteristics indicator
2SA1204
2011-02-04
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PC – Ta
Collector power dissipation PC (W)
Collector current IC (mA)
IC – VBE
VCE (sat) – IC
hFE – IC
IC – VCE
Collector current IC (mA)
Collector-emitter saturation voltage
VCE (sat) (V)
Collector current IC (mA)
DC current gain hFE
Collector-emitter voltage VCE (V)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Base-emitter voltage VBE (V)
Safe Operating Area
Collector current IC (mA)
Ambient temperature Ta (°C)
0 8 4 2
0
400
800
Common emitter
Ta = 25°C
600
6
200 IB = 1 mA
8
0
7
5
4
3
2
6 Common emitter
VCE = 1 V
1
500
30 100010
100
10
100 300
300
1000
Ta = 100°C
25
25
50
30
3
0 1.6 0.80.4
0
400
800
Common emitter
VCE = 1 V
600
1.2
200
2.0
Ta = 100°C
25
25
0
0
0.6
0.2
0.8
0.4
1.2
1.0
120 80 100 40 6020 140 160
(1) Mounted on a ceramic
substrate (250 mm2 × 0.8 mm t)
(2) No heat sink
(1)
(2)
1
0.5
30 100010
0.1
0.01
100 300
0.3
1
0.05
0.03
3
Ta = 100°C
25
25
Common emitter
IC/IB = 25
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated linearly
with increase in temperature.
Tested without a substrate.
0.1 3 0.3 30 100
3
30
10
100
5
50
IC max (pulse)*
IC max (continuous)
100 ms*
1 ms*
10 ms*
10 1
300
3000
1000
500
Ta = 25°C
DC operation
VCEO max
2SA1204
2011-02-04
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