GWM 160-0055X1 Three phase full Bridge VDSS = 55 V = 150 A ID25 RDSon typ. = 2.7 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions Maximum Ratings VDSS TJ = 25C to 150C 55 V 20 V 150 115 A A ID25 ID90 TC = 25C TC = 90C IF25 IF90 TC = 25C (diode) TC = 90C (diode) Symbol Conditions -o u VGS 120 75 A A e Characteristic Values (TJ = 25C, unless otherwise specified) on chip level at VGS = 10 V; ID = 100 A TJ = 25C TJ = 125C a RDSon s min. 1) VGS(th) VDS = 20 V; ID = 1 mA IDSS VDS = VDSS; VGS = 0 V IGSS VGS = 20 V; VDS = 0 V Qg Qgs Qgd VGS = 10 V; VDS = 12 V; ID = 160 A td(on) tr td(off) tf Eon Eoff Erecoff RthJC RthJH 1) max. 2.7 4.5 3.3 2.5 TJ = 25C TJ = 125C h mW mW 4.5 V 1 A mA 0.2 A 0.1 105 tbd tbd nC nC nC 140 125 550 120 ns ns ns ns 0.17 0.60 0.004 mJ mJ mJ p inductive load VGS = 10 V; VDS = 24 V ID = 100 A; RG = 39 ; TJ = 125C typ. with heat transfer paste (IXYS test setup) 1.3 1.0 1.6 AC drives * in automobiles - electric power steering - starter generator * in industrial vehicles - propulsion drives - fork lift drives * in battery supplied equipment t Symbol Features * MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode * package: - high level of integration - high current capability 300 A max. - aux. terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer * Space and weight savings Package options * 2 lead forms available - straight leads (SL) - SMD lead version (SMD) K/W K/W VDS = ID*(RDS(on) + 2RPin to Chip) Recommended replacements: MTI 120W55GA / MTI 120W55GC IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 20110307i 1-6 GWM 160-0055X1 Source-Drain Diode Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. VSD (diode) IF = 100 A; VGS = 0 V trr QRM IRM IF = 100 A; -diF/dt = 800 A/s; VR = 24 V typ. max. 1.0 1.3 40 0.42 20 V ns C A Component Conditions Maximum Ratings IRMS per pin in main current paths (P+, N-, L1, L2, L3) may be additionally limited by external connections TJ Tstg VISOL IISOL < 1 mA, 50/60 Hz, f = 1 minute FC mounting force with clip Symbol Conditions -55...+175 -55...+125 C C 1000 V~ N 0.6 mW 160 pF 25 g e Weight max. -o coupling capacity between shorted pins and mounting tab in the case typ. u Characteristic Values Rpin to chip 1) VDS = ID*(RDS(on) + 2RPin to Chip) p h a s 1) A 50 - 250 min. CP 300 t Symbol IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 20110307i 2-6 GWM 160-0055X1 Straight Leads GWM 160-0055X1-SL 37,5 +0,20 5 0,05 (11x) 3 0,05 1,5 1 0,05 0,5 0,02 1 0,05 S6 G6 S5 G5 S4 G4 S3 G3 S2 G2 S1 G1 25 +0,20 53 0,15 L3 L2 L1 L- L+ t 2,1 4,5 12 0,05 u 4 0,05 (3x) 6 0,05 Surface Mount Device 37,5 +0,20 (11x) 3 0,05 1,5 -o GWM 160-0055X1-SMD 5 0,05 e 1 0,05 0,5 0,02 a s R1 0,2 S6 G6 S5 G5 S4 G4 S3 G3 S2 G2 S1 G1 h p L2 L1 L- L+ 2,1 1 0,05 12 0,05 4,5 25 +0,20 39 0,15 L3 5 0,10 4 0,05 5 2 (3x) 6 0,05 Leads Ordering Straight Standard SMD Standard Part Name & Packing Unit Marking Part Marking Delivering Mode Base Qty. Ordering Code GWM 160-0055X1 - SL GWM 160-0055X1 Blister 28 505 230 GWM 160-0055X1 - SMD GWM 160-0055X1 Blister 28 504 862 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 20110307i 3-6 GWM 160-0055X1 350 1.2 VDS = 24 V 300 1.1 250 1.0 ID - [A] VDSS [V] normalized IDSS = 0.25 mA 0.9 200 150 100 0.8 TJ = 125C 50 0 0.7 -25 0 25 50 75 100 125 150 TJ = 25C 3 4 5 TJ [C] 350 VGS= 20 V 15 V 300 10 V TJ = 25C 7V e 2 3 VDS [V] 4 5 5.5 V 5V 50 s 1 6V 150 0 6 a 0 6.5 V 200 100 5V 50 0 ID [A] 5.5 V 100 7V 250 6V 150 TJ = 125C 10 V -o ID [A] 200 VGS = 20 V 15 V 300 6.5 V 250 8 u 350 7 Fig. 2 Typical transfer characteristic t Fig. 1 Drain source breakdown voltage VDSS vs. junction temperature TJ 6 VGS [V] 1 2 3 VDS [V] 4 5 6 Fig. 4 Typical output characteristic h Fig. 3 Typical output characteristic 0 VGS = 10 V ID = 160 A 1.5 3.0 6.0 2.5 4.5 RDS(on) RDS(on) normalized 1.0 3.0 0.5 RDS(on) [m] RDS(on) normalized 2.0 7.5 1.5 0.0 -25 0 25 50 75 100 125 0.0 150 TJ [C] Fig. 5 Drain source on-state resistance RDS(on) versus junction temperature TJ IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved RDS(ON) - normalized p 2.5 5V 5.5 V 6V 6.5 V 7V 2.0 TJ = 125C 1.5 VGS = 10 V 1.0 0.5 15 V 20 V 0 50 100 150 200 250 300 350 ID [A] Fig. 6 Drain source on-state resistance RDS(on) versus ID 20110307i 4-6 GWM 160-0055X1 12 200 VDS = 12 V ID = 160 A TJ = 25C 10 160 140 8 VDS = 40 V 6 ID - [A] VGS [V] TJ = 175C 180 4 120 100 80 60 40 2 20 20 40 60 80 100 120 140 0 160 0 25 50 75 VDS = 24 V VGS = +10/0 V 1.2 250 1.0 200 0.10 100 0 50 Erec(off) x10 20 40 60 0 100 120 140 160 180 80 ID [A] 0.0 TJ = 125C h td(on) 0.6 150 0.4 0 20 60 20 40 80 100 80 400 200 0 100 120 140 160 180 0 120 Fig. 11 Typ. turn-on energy & switching times vs. gate resistor, inductive switching IXYS reserves the right to change limits, test conditions and dimensions. 1650 1500 1350 td(off) TJ = 125C 1.4 1.2 1050 750 Eoff 0.8 600 0.6 450 tf 0.4 0.2 0.0 1200 900 1.0 300 150 0 20 40 60 80 100 0 120 RG [] RG [] (c) 2011 IXYS All rights reserved 60 ID = 160 A 1.6 50 Erec(off) x10 40 tf VDS = 24 V VGS = +10/0 V 1.8 100 Eon 0 2.0 300 200 0.2 td(off) Eoff 2.2 250 0.8 0.0 350 Eoff [mJ] 1.0 600 Fig. 10 Typ. turn-off energy & switching times vs. collector current, inductive switching t [ns] ID = 160 A tr 800 ID [A] a Eon, Erec(off) [mJ] 1.2 p VDS = 24 V VGS = +10/0 V TJ = 125C 0.4 Fig. 9 Typ. turn-on energy & switching times vs. collector current, inductive switching 1.4 1000 RG = 39 0.6 0.2 e 0.00 150 0.8 Eoff [mJ] td(on) 0.15 1200 -o tr t [ns] TJ = 125C Eon 175 VDS = 24 V VGS = +10/0 V s Eon, Erec(off) [mJ] 300 RG = 39 0.05 150 t 0.30 0.20 125 Fig. 8 Drain current ID vs. case temperature TC u Fig.7 Gate charge characteristic 0.25 100 TC [C] QG [nC] t [ns] 0 t [ns] 0 Fig. 12 Typ. turn-off energy & switching times vs. gate resistor, inductive switching 20110307i 5-6 GWM 160-0055X1 30 50 160 A 100 A 25 IF = 50 A 20 30 IRM [A] trr [ns] 40 20 160 A 15 100 A 10 VR = 24 V TJ = 125C 10 0 200 400 600 800 1000 IF = 50 A VR = 24 V TJ = 125C 5 0 200 1200 400 -diF/dt [A/s] 800 1000 1200 Fig. 14 350 0.5 300 VGS = 0 V u 0.6 Reverse recovery current IRM of the body diode vs. di/dt t Fig. 13 Reverse recovery time trr of the body diode vs. di/dt 250 IF [A] 160 A 100 A 0.3 0.2 IF = 50 A 400 600 800 1000 e 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VSD [V] Reverse recovery charge Qrr of the body diode vs. di/dt Fig. 16 Source drain diode current IF vs. source drain voltage VSD (body diode) h VDS ID 1.4 0.9 VGS t 0.1 VGS 0.9 ID 0.9 ID 0.1 ID td(on) 0.1 ID tr td(off) t tf Thermal Response [K/W] p VGS TJ = -25C 25C 125C 150C 0 1200 a -diF /dt [A/s] 50 s VR = 24 V TJ = 125C Fig. 15 150 100 0.1 0.0 200 200 -o 0.4 Qrr [C] 600 -diF/dt [A/s] 1.2 1.0 0.8 0.6 0.4 0.2 0.0 GWM 160-0055X1 1 10 100 1000 10000 t [ms] Fig. 17 Definition of switching times IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved Fig. 18 Typ. thermal impedance junction to heatsink ZthJH with heat transfer paste 20110307i 6-6 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: IXYS: GWM160-0055X1-SL GWM160-0055X1-SLSAM GWM160-0055X1-SMDSAM