© 2011 IXYS All rights reserved 1 - 6
20110307i
GWM 160-0055X1
IXYS reserves the right to change limits, test conditions and dimensions.
VDSS = 55 V
ID25 = 150 A
RDSon typ. = 2.7 mW
Three phase full Bridge
with Trench MOSFETs
in DCB isolated high current package
Applications
AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Features
• MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability 300 A max.
- aux. terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
• Space and weight savings
Package options
• 2 lead forms available
- straight leads (SL)
- SMD lead version (SMD)
S2
L-
L1
L2
L3
G2
S1
G1
S3
G3
S4
G4
S5
G5
S6
G6
L+
Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
RDSon 1) on chip level at TJ = 25°C
VGS = 10 V ; ID = 100 A TJ = 125°C
2.7
4.5
3.3 mW
mW
VGS(th) VDS = 20 V; ID = 1 mA 2.5 4.5 V
IDSS VDS = VDSS; VGS = 0 V TJ = 25°C
TJ = 125°C 0.1
1 µA
mA
IGSS VGS = ± 20 V; VDS = 0 V 0.2 µA
Qg
Qgs
Qgd
VGS = 10 V; VDS = 12 V; ID = 160 A
105
tbd
tbd
nC
nC
nC
td(on)
tr
td(off)
tf
inductive load
VGS = 10 V; VDS = 24 V
ID = 100 A; RG = 39 Ω;
TJ = 125°C
140
125
550
120
ns
ns
ns
ns
Eon
Eoff
Erecoff
0.17
0.60
0.004
mJ
mJ
mJ
RthJC
RthJH with heat transfer paste (IXYS test setup) 1.3
1.0
1.6
K/W
K/W
1) VDS = ID·(RDS(on) + 2RPin to Chip)
MOSFETs
Symbol Conditions Maximum Ratings
VDSS TJ = 25°C to 150°C 55 V
VGS ± 20 V
ID25
ID90
TC = 25°C
TC = 90°C
150
115
A
A
IF25
IF90
TC = 25°C (diode)
TC = 90°C (diode)
120
75
A
A
Surface Mount DeviceStraight leads
p h a s e - o u t
Recommended replacements: MTI 120W55GA / MTI 120W55GC
© 2011 IXYS All rights reserved 2 - 6
20110307i
GWM 160-0055X1
IXYS reserves the right to change limits, test conditions and dimensions.
Component
Symbol Conditions Maximum Ratings
IRMS per pin in main current paths (P+, N-, L1, L2, L3)
may be additionally limited by external connections
300 A
TJ
Tstg
-55...+175
-55...+125
°C
°C
VISOL IISOL < 1 mA, 50/60 Hz, f = 1 minute 1000 V~
FCmounting force with clip 50 - 250 N
Symbol Conditions Characteristic Values
min. typ. max.
Rpin to chip 1) 0.6 mW
CPcoupling capacity between shorted
pins and mounting tab in the case
160 pF
Weight 25 g
1) VDS = ID·(RDS(on) + 2RPin to Chip)
Source-Drain Diode
Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VSD (diode) IF = 100 A; VGS = 0 V 1.0 1.3 V
trr
QRM
IRM
IF = 100 A; -diF/dt = 800 A/µs; VR = 24 V
40
0.42
20
ns
µC
A
p h a s e - o u t
© 2011 IXYS All rights reserved 3 - 6
20110307i
GWM 160-0055X1
IXYS reserves the right to change limits, test conditions and dimensions.
Leads Ordering Part Name &
Packing Unit Marking Part Marking Delivering Mode Base Qty. Ordering
Code
Straight Standard GWM 160-0055X1 - SL GWM 160-0055X1 Blister 28 505 230
SMD Standard GWM 160-0055X1 - SMD GWM 160-0055X1 Blister 28 504 862
Straight Leads GWM 160-0055X1-SL
1 ±0,05
5 ±0,05
0,5 ±0,02
25 +0,20
53 ±0,15
37,5 +0,20
1 ±0,05
(11x) 3 ±0,05
4 ±0,05
(3x) 6 ±0,05
12 ±0,05
1,5
4,5
2,1
Surface Mount Device GWM 160-0055X1-SMD
25 +0,20
5 ±0,05
39 ±0,15
4 ±0,05
1 ±0,05
R1 ±0,2
0,5 ±0,02
5° ±2°
1 ±0,05
5 ±0,10
(3x) 6 ±0,05
12 ±0,05
(11x) 3 ±0,05
37,5 +0,20
1,5
4,5
2,1
G1S1G2S2G3S3G4S4G5S5G6S6
L+L-L1L2L3
G1S1G2S2G3S3G4S4G5S5G6S6
L+L-L1L2L3
p h a s e - o u t
© 2011 IXYS All rights reserved 4 - 6
20110307i
GWM 160-0055X1
IXYS reserves the right to change limits, test conditions and dimensions.
-25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
0.0
1.5
3.0
4.5
6.0
7.5
VDS [V]
0123456
ID [A]
0
50
100
150
200
250
300
350
VDS [V]
0123456
ID [A]
0
50
100
150
200
250
300
350
VGS [V]
3 4 5 6 7 8
ID - [A]
0
50
100
150
200
250
300
350
5.5 V
7 V
-25 0 25 50 75 100 125 150
0.7
0.8
0.9
1.0
1.1
1.2
TJ [°C]
TJ = 125°C
TJ = 25°C
7 V
6.5 V
6 V
ID [A]
0 50 100 150 200 250 300 350
RDS(ON) - normalized
0.5
1.0
1.5
2.0
2.5
3.0
10 V
15 V
5 V
5.5 V
5 V
6.5 V
RDS(on) normalized
RDS(on)
RDS(on) [mΩ]
TJ [°C]
5.5 V5 V 6 V 6.5 V 7 V
20 V
10 V
VGS =
20 V
15 V
VDSS [V] normalized
10 V
VGS=
20 V
15 V
VGS = 10 V
ID = 160 A
TJ = 125°C
VGS =
IDSS = 0.25 mA
TJ = 125°C
TJ = 25°C
6 V
RDS(on) normalized
VDS = 24 V
Fig. 1 Drain source breakdown voltage VDSS
vs. junction temperature TJ
Fig. 2 Typical transfer characteristic
Fig. 3 Typical output characteristic Fig. 4 Typical output characteristic
Fig. 5 Drain source on-state resistance RDS(on)
versus junction temperature TJ
Fig. 6 Drain source on-state
resistance RDS(on) versus ID
p h a s e - o u t
© 2011 IXYS All rights reserved 5 - 6
20110307i
GWM 160-0055X1
IXYS reserves the right to change limits, test conditions and dimensions.
QG [nC]
0 20 40 60 80 100 120 140 160
ID - [A]
0
2
4
6
8
10
12
tr
VGS [V]
0 20 40 60 80 100 120 140 160 180
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0
50
100
150
200
250
300
0 20 40 60 80 100 120 140 160 180
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
200
400
600
800
1000
1200
0 20 40 60 80 100 120
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
50
100
150
200
250
300
350
0 20 40 60 80 100 120
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
0
150
300
450
600
750
900
1050
1200
1350
1500
1650
TC [°C]
0 25 50 75 100 125 150 175
0
20
40
60
80
100
120
140
160
180
200
Eon, Erec(off) [mJ]
ID [A] ID [A]
t [ns]
Eoff tf
td(off)
t [ns]
Eon, Erec(off) [mJ]
t [ns]
tr
RG [Ω]
Eoff [mJ]
t [ns]
RG [Ω]
Eoff
td(off)
tf
Eoff [mJ]
VDS = 12 V
VDS = 40 V
ID = 160 A
TJ = 25°C
VDS = 24 V
VGS = +10/0 V
RG = 39 Ω
TJ = 125°C
VDS = 24 V
VGS = +10/0 V
RG = 39 Ω
TJ = 125°C
VDS = 24 V
VGS = +10/0 V
ID = 160 A
TJ = 125°C
VDS = 24 V
VGS = +10/0 V
ID = 160 A
TJ = 125°C
td(on)
Eon
Erec(off) x10
Eon
td(on)
Erec(off) x10
TJ = 175°C
Fig.7 Gate charge characteristic Fig. 8 Drain current ID vs. case temperature TC
Fig. 9 Typ. turn-on energy & switching times
vs. collector current, inductive switching
Fig. 10 Typ. turn-off energy & switching times
vs. collector current, inductive switching
Fig. 11 Typ. turn-on energy & switching times
vs. gate resistor, inductive switching
Fig. 12 Typ. turn-off energy & switching times
vs. gate resistor, inductive switching
p h a s e - o u t
© 2011 IXYS All rights reserved 6 - 6
20110307i
GWM 160-0055X1
IXYS reserves the right to change limits, test conditions and dimensions.
-diF/dt [A/µs]
200 400 600 800 1000 1200
IRM [A]
0
5
10
15
20
25
30
-diF/dt [A/µs]
200 400 600 800 1000 1200
trr [ns]
0
10
20
30
40
50
VSD [V]
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
IF [A]
0
50
100
150
200
250
300
350
-diF /dt [A/µs]
200 400 600 800 1000 1200
Qrr [µC]
0.0
0.1
0.2
0.3
0.4
0.5
0.6
t [ms]
1 10 100 1000 10000
Thermal Response [K/W]
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VR = 24 V
TJ = 125°C VR = 24 V
TJ = 125°C
VGS = 0 V
VR = 24 V
TJ = 125°C
TJ = -25°C
25°C
125°C
150°C
160 A
100 A
IF = 50 A
160 A
100 A
IF = 50 A
160 A
100 A
IF = 50 A
GWM 160-0055X1
Fig. 13 Reverse recovery time trr
of the body diode vs. di/dt
Fig. 14 Reverse recovery current IRM
of the body diode vs. di/dt
Fig. 15 Reverse recovery charge Qrr
of the body diode vs. di/dt
Fig. 16 Source drain diode current IF vs.
source drain voltage VSD (body diode)
Fig. 17 Definition of switching times Fig. 18 Typ. thermal impedance junction to
heatsink ZthJH with heat transfer paste
0.9 VGS
0.1 VGS
0.9 ID0.9 ID
0.1 ID
VGS
VDS
ID
0.1 ID
t
t
trtf
td(on) td(off)
p h a s e - o u t
