Rev.3.00 Jun 15, 2005 page 1 of 7
HA17358A Series
Dual Operational Amplifier REJ03D0676-0300
(Previous : AD E- 204-0 33 B)
Rev.3.00
Jun 15, 2005
Description
HA17358A series are dual operational amplifier that provide high gain and internal phase compensation, with single
power supply. They can be widely applied to control equipments and to general use.
Features
• Wide range of supply voltage, and single power supply used
• Wide range of common mode voltage, and possible to operate with an input about 0 V, and output around 0 V is
available
• Frequency characteristics and input bias current are temperature compensated
• Low electro-magnetic susceptibility level
Output Offset Voltage vs. Input InterferenceMeasurement Condition
Output offset voltage (arb. unit)
5.0
4.0
3.0
2.0
1.0
0
−1.0
100E+3 1E+6 10E+6 100E+6 1E+9 10E+9
Input RF frequency (Hz)
HA17358A series
HA17358 series
Rs −
+
Rs
0.01 µ
Vin
−10 dBm
RF signal source
(for quasi-RF noise)
Vcc = +7.5 V
Vee = −7.5 V
Rf
Rf
Vout
(= 100∗Vio)
V
_Improve-
ment
Ordering Information
Type No. Application Package Code (Previous Code)
HA17358A Commercial use PRDP0008AF-A (DP-8B)
HA17358AF PRSP0008DE-B (FP-8DGV)
HA17358ARP PRSP0008DD-C (FP-8DCV)
HA17358AT PTSP0008JC-B (TTP-8DAV)
HA17358A Series
Rev.3.00 Jun 15, 2005 page 2 of 7
Pin Arrangement
−+
Vout1
Vin(−)1
Vin(+)1
GND
V
CC
Vout2
Vin(−)2
Vin(+)2
+−
8
7
6
5
1
2
3
4
(Top View)
1
2
Circuit Schematic (1/2)
Q1Q4
Q2Q3
Q5
Q6
Q7
Q13
Q12
Q11
Q10
Q8Q9
Vout
R1
Vin(+)
Vin(−)C
HA17358A Series
Rev.3.00 Jun 15, 2005 page 3 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Ratings
Item
Symbol HA17358A HA17358AF/ARP
Unit
Supply voltage VCC 32 32 V
Sink current Isink 50 50 mA
Power dissipation PT 570 *1 385 *2 mW
Common mode input voltage VCM −0.3 to VCC −0.3 to VCC V
Differential input voltage Vin (diff) ±VCC ±VCC V
Operating temperature Topr −40 to +85 −40 to +85 °C
Storage temperature Tstg −55 to +125 −55 to +125 °C
Notes: 1. This is the allowable values up to Ta = 50°C. Derate by 8.3 mW/°C.
2. These are the allowable values up to Ta = 25°C mounti ng in air.
When it is mounted on glass epoxy board of 40 mm × 40 mm × 1.5 mmt with 30% wiring density, the
allowable value is 570 mW up to Ta = 45°C. If Ta > 45°C, derate by 7.14 mW/°C.
Electrical Characteristics
(VCC = +15 V, Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Input offset voltage VIO — 3 7 mV VCM = 7.5V, RS = 50Ω, Rf = 50kΩ
Input offset current IIO — 5 50 nA VCM = 7.5V, IIO = | II (+) – II (–) |
Input bias current IIB — 30 250 nA VCM = 7.5V
Power source rejection ratio PSRR — 93 — dB RS = 1kΩ, Rf = 100kΩ
Voltage gain AVD 75 90 — dB RL = ∞, RS = 1kΩ, Rf = 100kΩ
Common mode rejection ratio CMR — 80 — dB RS = 50Ω, Rf = 5kΩ
VCM (+) 13.5 — — V RS = 1kΩ, Rf = 100kΩ Common mode input voltage range VCM (–) — — –0.3 V RS = 1kΩ, Rf = 100kΩ
Peak-to-peak output voltage Vop-p — 13.6 — V f = 100Hz, RL = 20kΩ, RS = 1kΩ,
Rf = 100kΩ
Output source current Iosource 20 40 — mA VIN+ = 1V, VIN– = 0V, VOH = 10V
Output sink current Iosink 10 20 — mA VIN– = 1V, VIN+ = 0V, VOL = 2.5V
Output sink current Iosink 15 50 — µA VIN– = 1V, VIN+ = 0V,
Vout = 200mV
Supply current ICC — 0.8 2 mA VIN = GND, RL = ∞
Slew rate SR — 0.2 — V/µs RL = ∞, VCM = 7.5V, f = 1.5kHz
Channel separation CS — 120 — dB f = 1kHz
HA17358A Series
Rev.3.00 Jun 15, 2005 page 4 of 7
Characteristic Curves
Output Source Current vs. Ambient Temperature
80
Output source current Iosource (mA)
Ambeint temperature Ta (°C)
70
60
50
40
30
20
10
0
−20 0 20 40 60 80
V
CC
= 15 V
V
OH
= 10 V
Input Bias Current vs. Ambient Temperature
80
Input bias current I
IB
(nA)
Ambeint temperature Ta (°C)
70
60
50
40
30
20
10
0
−20 0 20 40 60 80
V
CC
= 15 V
V
CM
= 7.5 V
Supply Current vs. Supply Voltage
4
Supply current I
CC
(mA)
Supply voltage V
CC
(V)
3
2
1
0816243240
Ta = 25°C80
Input bias current I
IB
(nA)
Supply voltage V
CC
(V)
60
40
20
0816243240
Ta = 25°C
Voltage Gain vs. Supply Voltage
160
Voltage gain A
VD
(dB)
Supply voltage V
CC
(V)
120
80
40
0816243240
Ta = 25°C
R
L
= ∞
Maxlmum Output Voltage vs. Frequency
Input Bias Current vs. Supply Voltage
20
Maximum output voltage V
OP
-
P
(V)
Frequency f (Hz)
1 k 3 k 10 k 30 k 100 k 300 k
16
12
8
4
0
V
CC
= 15 V
Ta = 25°C
R
L
= 20 kΩ
1 M
HA17358A Series
Rev.3.00 Jun 15, 2005 page 5 of 7
Voltage Gain vs. Frequency
VCC = 15V
Ta = 25°C
RL = ∞
Voltage gain AVD (dB)
120
100
80
60
40
20
01 3 10 30 100 300 1 k 3 k 10 k 30 k 100 k 300 k 1 M
Frequency f (Hz)
VCC = 15V
Ta = 25°C
RS = 50 Ω
120
100
80
60
40
20
0
100 300 1 k 3 k 10 k 30 k 100 k 300 k 1M
Frequency f (Hz)
Common Mode Rejection Ratio vs. Frequency
Common mode rejection ratio CMR (dB)
HA17358A Series
Rev.3.00 Jun 15, 2005 page 6 of 7
Package Dimensions
7.62
DP-8B
RENESAS CodeJEITA Package Code Previous Code
MaxNomMin
Dimension in Millimeters
Symbol
Reference
9.6
6.3
5.06
MASS[Typ.]
0.51g
A
Z
b
D
E
A
b
c
θ
e
L
1
1
p
3
e
0.5
0.58
1.3
0.20 0.25 0.35
2.29 2.54 2.79
0
°
15
°
PRDP0008AF-AP-DIP8-6.3x9.6-2.54
10.6
7.4
0.38 0.48
1.27
2.54
1
p
1
3
14
85
0.89
c
Z
e
LA
A
b
b
E
D
e
θ
PRSP0008DE-BP-SOP8-4.4x4.85-1.27
A
L
e
c
b
D
E
A
b
c
θ
x
y
H
Z
L
2
1
1
E
1
MASS[Typ.]
0.1g
4.85
1.05
0.12
0
°
8
°
6.5
0.15 0.20 0.25
0.45
0.00 0.1 0.20
4.4
0.42 0.60 0.85
2.03
Reference
Symbol
Dimension in Millimeters
Min Nom Max
Previous CodeJEITA Package Code RENESAS Code FP-8DGV
5.25
1
A
p
0.35 0.4
6.756.35
1.27
0.15
0.75
58
4
F
*1
*2
*3p
Mx
y
1
Index mark
E
A
Zb
E
H
D
p
Terminal cross section
( Ni/Pd/Au plating )
c
b
1
1
Detail F
A
L
L
θ
NOTE)
1. DIMENSIONS"*1 (Nom)"AND"*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION"*3"DOES NOT
INCLUDE TRIM OFFSET.
e
HA17358A Series
Rev.3.00 Jun 15, 2005 page 7 of 7
58
4
F
*1
*2
*3p
Mx
y
1
E
Index mark
A
D
Z
H
E
b
p
Terminal cross section
( Ni/Pd/Au plating )
c
b
1
1
Detail F
A
L
L
θ
0.085g
0.75
0.10
1.27
5.80 6.20
0.400.34
p
A
1
5.30
FP-8DCV
RENESAS CodeJEITA Package Code Previous Code
MaxNomMin
Dimension in Millimeters
Symbol
Reference
1.75
1.270.600.40
3.95
0.250.140.10
0.46
0.250.200.15
6.10
8
°
0
°
0.25
1.08
4.90
MASS[Typ.]
1
E
1
1
2
L
Z
H
y
x
θ
c
b
A
E
D
b
c
e
e
L
A
P-SOP8-3.95x4.9-1.27 PRSP0008DD-C
NOTE)
1. DIMENSIONS"*1 (Nom)"AND"*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION"*3"DOES NOT
INCLUDE TRIM OFFSET.
PTSP0008JC-BP-TSSOP8-4.4x3-0.65
A
L
e
c
b
D
E
A
b
c
θ
x
y
H
Z
L
2
1
1
E
1
MASS[Typ.]
0.034g
3.00
1.00
0.13
0
°
8
°
6.40
0.10 0.15 0.20
0.25
0.03 0.07 0.10
4.40
0.40 0.50 0.60
1.10
Reference
Symbol
Dimension in Millimeters
Min Nom Max
Previous CodeJEITA Package Code RENESAS Code TTP-8DAV
3.30
1
A
p
0.15 0.20
6.606.20
0.65
0.10
0.805
*1
85
E
*2
Index mark
14
*3p
Mx
y
F
A
D
E
H
Zb
Detail F
1
1
A
L
L
θ
p
Terminal cross section
( Ni/Pd/Au plating )
c
b
NOTE)
1. DIMENSIONS"*1 (Nom)"AND"*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION"*3"DOES NOT
INCLUDE TRIM OFFSET.
e
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits,
(ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and
cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
http://www.renesas.com
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology (Shanghai) Co., Ltd.
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
RENESAS SALES OFFICES
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon 2.0