T4-LDS-0047-1, Rev. 1 (121483) ©2012 Microsemi Corporation Page 1 of 10
2N6796U, 2N6798U, 2N6800U, 2N6802U
Compliant N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/557
Qualified Levels:
JAN, JANT X, JANTXV
and JANS*
DESCRIPTION
This family of switching transistors is military qualified up to the JANTXV level for high-
reliability applications. The 2N6798U part number is also qualified to the JANS level. These
devices are also av ai lable i n a TO-205AF (TO-39) package. Microsemi also offers numerous
other transistor products to meet higher and lower power ratings with various switching speed
requirements in both through-hole and surface-mount packages.
U-18 LCC
Package
Also available in:
TO-205AF (TO-39)
package
(Leaded Top Hat)
2N6796, 2N6798,
2N6800 & 2N6802
Important: For the latest information, vis it our website http://www.microsemi.com.
FEATURES
• Surface mount equivalent of JE DE C register ed 2N6796, 2N6798, 2N6800 and 2N6802 number
series.
• JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/557.
*JANS qualifi cat ion is availa ble on 2N6798U only.
(See part nomenclature for all available options.)
• RoHS compliant by design.
APPLICA TIONS / BENEFITS
• Compact surfa ce mou nt design enables mounting in crow ded areas.
• Military and other high-reliability applicatio ns.
MAXIMUM RATINGS @ TA = +25 ºC unless otherwise stated
Parameters / Test Conditions
Symbol
Value
Unit
Operating & Storage Junction Temperature Range
TJ & Tstg
-55 to +150
°C
Thermal Resi stan ce Jun cti on-to-Case (see Figure 1)
RӨJC
5.0
oC/W
Total Power Dissipation
A
(1)
PT
0.8
25
W
Drain-Source Voltage, dc
2N6798U
2N6800U
VDS
100
200
400
500
V
Gate-Source Voltage, dc
VGS
± 20
V
Drain Current, dc @ T
C
= +25 ºC
(2)
2N6796U
2N6798U
2N6800U
2N6802U
ID1
8.0
5.5
3.0
2.5
A
Drain Current, dc @ T
C
= +100 ºC
(2)
2N6796U
2N6798U
2N6800U
2N6802U
ID2
5.0
3.5
2.0
1.5
A
Off-State Current (Peak Total Value)
(3)
2N6796U
2N6798U
2N6800U
2N6802U
IDM
32
22
14
11
A (pk)
Source Current 2N6796U
2N6798U
2N6800U
2N6802U
IS
8.0
5.5
3.0
2.5
A
See notes on next page.
MSC – Lawrence
6 Lake Street, Lawrence,
MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0047-1, Rev. 1 (121483) ©2012 Microsemi Corporation Page 2 of 10
2N6796U, 2N6798U, 2N6800U, 2N6802U
Notes: 1. Derate linearly 0.2 W/°C for TC > +25 °C.
2. The following formula derives the maximum theoret ic al ID limit. ID is also limited by package and internal wires and may be limited due to
pin diamet er.
3. IDM = 4 x ID1 as calculated in note 1.
MECHANICAL and PACKAGING
• CASE: Ceramic LCC-18 with kovar gold plated lid.
• TERMINALS: Gold plating over nickel.
• MARKING: Manufacturer's ID, part number, date code, ESD symbol at Pin 1 location.
• TAPE & REEL option: Standard per EIA-481-D. Consult factory for quantities.
• See Package Dimensions on last page.
PART NOMENCLATURE
JAN 2N6796 U
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS level (2N6798)
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
Surface Mount package
SYMBOLS & DEFINITIONS
Symbol
Definition
di/dt
Rate of change of diode current while in reverse-recovery mode, recorded as maximum value.
IF
Forward current
RG
Gate drive impedance
VDD
Drain supply voltage
VDS
Drain source voltage, dc
VGS
Gate source voltage, dc
T4-LDS-0047-1, Rev. 1 (121483) ©2012 Microsemi Corporation Page 3 of 10
2N6796U, 2N6798U, 2N6800U, 2N6802U
ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Drain-S our ce Br eakdown Volta ge
VGS = 0 V, ID = 1.0 mA
2N6796U
2N6798U
2N6800U
2N6802U
V(BR)DSS
100
200
400
500
V
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = 0.25 mA
VDS ≥ VGS, ID = 0.25 mA, TJ = +125°C
VDS ≥ VGS, ID = 0.25 mA, TJ = -55°C
VGS(th)1
VGS(th)2
VGS(th)3
2.0
1.0
4.0
5.0
V
Gate Current
VGS = ± 20 V, VDS = 0 V
VGS = ± 20 V, VDS = 0 V, TJ = +125°C
IGSS1
IGSS2
±100
±200
nA
Drain Current
VGS = 0 V, VDS = 80 V
VGS = 0 V, VDS = 160 V
VGS = 0 V, VDS = 320 V
VGS = 0 V, VDS = 400 V
2N6796U
2N6798U
2N6800U
2N6802U
IDSS1
25
µA
Drain Current
VGS = 0 V, VDS = 80 V, TJ = +125 °C
VGS = 0 V, VDS = 160 V, TJ = +125 °C
VGS = 0 V, VDS = 320 V, TJ = +125 °C
VGS = 0 V, VDS = 400 V, TJ = +125 °C
2N6796U
2N6798U
2N6800U
2N6802U
IDSS2
0.25
mA
Static Drain-Source On-State Resistance
VGS = 10 V, ID = 5.0 A pulsed
VGS = 10 V, ID = 3.5 A pulsed
VGS = 10 V, ID = 2.0 A pulsed
VGS = 10 V, ID = 1.5 A pulsed
2N6796U
2N6798U
2N6800U
2N6802U
rDS(on)1
0.18
0.40
1.00
1.50
Ω
Static Drain-Source On-State Resistance
VGS = 10 V, ID = 8.0 A pulsed
VGS = 10 V, ID = 5.5 A pulsed
VGS = 10 V, ID = 3.0 A pulsed
VGS = 10 V, ID = 2.5 A pulsed
2N6796U
2N6798U
2N6800U
2N6802U
rDS(on)2
0.195
0.420
1.100
1.600
Ω
Static Drain-Source On-State Resistance
TJ = +125°C
VGS = 10 V, ID = 5.0 A pulsed
VGS = 10 V, ID = 3.5 A pulsed
VGS = 10 V, ID = 2.0 A pulsed
VGS = 10 V, ID = 1.5 A pulsed
2N6796U
2N6798U
2N6800U
2N6802U
rDS(on)3
0.35
0.75
2.40
3.50
Ω
Diode Forward Voltage
VGS = 0 V, ID = 8.0 A pulsed
VGS = 0 V, ID = 5.5 A pulsed
VGS = 0 V, ID = 3.0 A pulsed
VGS = 0 V, ID = 2.5 A pulsed
2N6796U
2N6798U
2N6800U
2N6802U
VSD
1.5
1.4
1.4
1.4
V
T4-LDS-0047-1, Rev. 1 (121483) ©2012 Microsemi Corporation Page 4 of 10
2N6796U, 2N6798U, 2N6800U, 2N6802U
ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued)
DYN AMIC CH AR ACTE RISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Gate Charge:
On-State Gate Charge
VGS = 10 V, ID = 8.0 A, VDS = 50 V
VGS = 10 V, ID = 5.5 A, VDS = 50 V
VGS = 10 V, ID = 3.0 A, VDS = 50 V
VGS = 10 V, ID = 2.5 A, VDS = 50 V
2N6796U
2N6798U
2N6800U
2N6802U
Qg(on)
28.51
42.07
34.75
33.00
nC
Gate to Source Charge
VGS = 10 V, ID = 8.0 A, VDS = 50 V
VGS = 10 V, ID = 5.5 A, VDS = 50 V
VGS = 10 V, ID = 3.0 A, VDS = 50 V
VGS = 10 V, ID = 2.5 A, VDS = 50 V
2N6796U
2N6798U
2N6800U
2N6802U
Qgs
6.34
5.29
5.75
4.46
nC
Gate to Drain Charge
VGS = 10 V, ID = 8.0 A, VDS = 50 V
VGS = 10 V, ID = 5.5 A, VDS = 50 V
VGS = 10 V, ID = 3.0 A, VDS = 50 V
VGS = 10 V, ID = 2.5 A, VDS = 50 V
2N6796U
2N6798U
2N6800U
2N6802U
Qgd
16.59
28.11
16.59
28.11
nC
SWITCHING CHARACTERI STICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Turn-on delay time
ID = 8.0 A, VGS = +10 V, RG = 7.5 Ω, VDD = 30 V
ID = 5.5 A, VGS = +10 V, RG = 7.5 Ω, VDD = 77 V
ID = 3.0 A, VGS = +10 V, RG = 7.5 Ω, VDD = 176 V
ID = 2.5 A, VGS = +10 V, RG = 7.5 Ω, VDD = 225 V
2N6796U
2N6798U
2N6800U
2N6802U
td(on)
30
ns
Rinse time
ID = 8.0 A, VGS = +10 V, RG = 7.5 Ω, VDD = 30 V
ID = 5.5 A, VGS = +10 V, RG = 7.5 Ω, VDD = 77 V
ID = 3.0 A, VGS = +10 V, RG = 7.5 Ω, VDD = 176 V
ID = 2.5 A, VGS = +10 V, RG = 7.5 Ω, VDD = 225 V
2N6796U
2N6798U
2N6800U
2N6802U
tr
75
50
35
30
ns
Turn-off delay time
ID = 8.0 A, VGS = +10 V, RG = 7.5 Ω, VDD = 30 V
ID = 5.5 A, VGS = +10 V, RG = 7.5 Ω, VDD = 77 V
ID = 3.0 A, VGS = +10 V, RG = 7.5 Ω, VDD = 176 V
ID = 2.5 A, VGS = +10 V, RG = 7.5 Ω, VDD = 225 V
2N6796U
2N6798U
2N6800U
2N6802U
td(off)
40
50
55
55
ns
Fall time
ID = 8.0 A, VGS = +10 V, RG = 7.5 Ω, VDD = 30 V
ID = 5.5 A, VGS = +10 V, RG = 7.5 Ω, VDD = 77 V
ID = 3.0 A, VGS = +10 V, RG = 7.5 Ω, VDD = 176 V
ID = 2.5 A, VGS = +10 V, RG = 7.5 Ω, VDD = 225 V
2N6796U
2N6798U
2N6800U
2N6802U
tf
45
40
35
30
ns
Diode Reverse Recovery Time
di/dt ≤ 100 A/µs, VDD ≤ 50 V, IF = 8.0 A
di/dt ≤ 100 A/µs, VDD ≤ 50 V, IF = 5.5 A
di/dt ≤ 100 A/µs, VDD ≤ 50 V, IF = 3.0 A
di/dt ≤ 100 A/µs, VDD ≤ 50 V, IF = 2.5 A
2N6796U
2N6798U
2N6800U
2N6802U
trr
300
500
700
900
ns
T4-LDS-0047-1, Rev. 1 (121483) ©2012 Microsemi Corporation Page 5 of 10
2N6796U, 2N6798U, 2N6800U, 2N6802U
GRAPHS
t1, RECTANGLE PULSE DURATION (seconds)
FIGURE 1 – Normalized Transient Thermal Impedance
THERMAL RESPONSE (ZӨJC)
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2N6796U, 2N6798U, 2N6800U, 2N6802U
GRAPHS (continued)
FIGURE 2 – Maximum Drain Current vs Case Temperature Graphs
TC, CASE TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
For 2N6796U For 2N6798U
TC, CASE TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
For 2N6800U For 2N6802U
I
D,
DRAIN CURRENT (A)
I
D,
DRAIN CURRENT (A)
I
D,
DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
T4-LDS-0047-1, Rev. 1 (121483) ©2012 Microsemi Corporation Page 7 of 10
2N6796U, 2N6798U, 2N6800U, 2N6802U
GRAPHS (continued)
FIGURE 3 – Maximum Safe Operating Area
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FOR 2N6796U
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FOR 2N6798U
ID, DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
T4-LDS-0047-1, Rev. 1 (121483) ©2012 Microsemi Corporation Page 8 of 10
2N6796U, 2N6798U, 2N6800U, 2N6802U
GRAPHS (continued)
FIGURE 3 – Maximum Safe Operating Area (continued)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FOR 2N6800U
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FOR 2N6802U
ID, DRAIN CURRENT (AMPERES)
ID, DRAIN-TO-SOURCE- CURRENT (AMPERES)
T4-LDS-0047-1, Rev. 1 (121483) ©2012 Microsemi Corporation Page 9 of 10
2N6796U, 2N6798U, 2N6800U, 2N6802U
PACKAGE DIMENSIONS
Dimensions
Ltr
Inches
Millimeters
Min
Max
Min
Max
BL
.345
.360
8.77
9.14
BW
.280
.295
7.12
7.49
CH
.095
.115
2.42
2.92
LL1
.040
.055
1.02
1.39
LL2
.055
.065
1.40
1.65
LS
.050 BSC
1.27 BSC
LS1
.025 BSC
0.635 BSC
LS2
.008 BSC
0.203 BSC
LW
.020
.030
0.51
0.76
Q1
.105 REF
2.67 REF
Q2
.120 REF
3.05 REF
Q3
.045
.055
1.14
1.40
TL
.070
.080
1.78
2.03
TW
.120
.130
3.05
3.30
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general
information only.
3. In accordance with ASME Y14.5M,
diameters are equivalent to Φx
symbology.
4. Ceramic package only.
T4-LDS-0047-1, Rev. 1 (121483) ©2012 Microsemi Corporation Page 10 of 10
2N6796U, 2N6798U, 2N6800U, 2N6802U
PAD LAYOUT
PAD AS SIGNM ENTS