ZXTP2012G Green 60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > -60V IC = -5.5A Continuous Collector Current ICM = -15A Peak Pulse Current Low Saturation Voltage VCE(SAT) < -70mV Max @ -1A RSAT = 39m @ -5A for Low Equivalent On-Resistance hFE Specified up to -10A for High Gain Hold Up Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOT223 Case Material: Molded Plastic. "Green" Molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Plated Leads. Solderable per MIL-STD-202, Method 208 Weight: 0.112 grams (Approximate) Applications DC-DC Converters MOSFET Gate Drivers Charging Circuits Power Switches Motor Control SOT223 Device Schematic Top View Pin-Out Top View Ordering Information (Note 4) Product ZXTP2012GTA Notes: Compliance AEC-Q101 Marking ZXTP2012 Reel Size (inches) 7 Tape Width (mm) 12 Quantity per Reel 1,000 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information ZXTP 2012 ZXTP2012G Document number: DS33712 Rev. 2 - 2 YWW SOT223 ZXTP 2012 = Product Type Marking Code YWW = Date Code Marking Y or Y = Last Digit of Year (ex: 5= 2015) WW or WW = Week code (01 - 53) 1 of 7 www.diodes.com December 2015 (c) Diodes Incorporated ZXTP2012G Absolute Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Symbol VCBO VCEO VEBO IC ICM Value -100 -60 -7 -5.5 -15 Unit V V V A A Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Power Dissipation Linear Derating Factor Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and Storage Temperature Range Symbol (Note 5) PD (Note 6) (Note 5) (Note 6) (Note 7) RJA RJA RJL TJ, TSTG Value 3.0 24 1.6 12.8 42 78 8.8 -55 to +150 Unit W mW/C C/W C ESD Ratings (Note 8) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value 4,000 400 Unit V V JEDEC Class 3A C 5. For a device mounted with the collector lead on 52mm x 52mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in steady-state. 6. Same as Note 5, except the device is mounted on 25mm x 25mm 1oz copper. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. ZXTP2012G Document number: DS33712 Rev. 2 - 2 2 of 7 www.diodes.com December 2015 (c) Diodes Incorporated ZXTP2012G VCE(sat) 10 Limit DC 1 1s 100ms 10ms 100m Single Pulse. T amb=25C 10m 100m 1ms 100s See note (5) 1 10 100 -VCE Collector-Emitter Voltage (V) Max Power Dissipation (W) -IC Collector Current (A) Thermal Characteristics and Derating Information 3.0 See note (5) 2.5 2.0 1.5 1.0 See note (6) 0.5 0.0 0 20 D=0.5 20 Single Pulse 0 100 D=0.05 D=0.1 1m 10m 100m 1 10 100 Pulse Width (s) 1k Max Power Dissipation (W) Thermal Resistance (C/W) 30 D=0.2 Document number: DS33712 Rev. 2 - 2 100 120 140 160 Single Pulse. T amb=25C 100 See note (5) 10 1 100 Transient Thermal Impedance ZXTP2012G 80 Derating Curve See note (5) 10 60 Temperature (C) Safe Operating Area 40 40 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation 3 of 7 www.diodes.com December 2015 (c) Diodes Incorporated ZXTP2012G Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 9) Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Symbol BVCBO BVCER BVCEO BVEBO ICBO ICER R1k IEBO Min -100 -100 -60 -7 -- -- Typ -120 -120 -80 -8.1 < -1 -- Max -- -- -- -- -20 -0.5 Unit V V V V nA A -- -- -- < -1 -- < -1 -20 -0.5 -10 nA A nA -25 -70 -120 -250 mV -1.15 -1.02 V V 300 -- Collector-Emitter Saturation Voltage (Note 9) VCE(SAT) -- -15 -55 -90 -195 Base-Emitter Saturation Voltage (Note 9) Base-Emitter Turn-On Voltage (Note 9) VBE(SAT) VBE(ON) -- -- -1.03 -0.92 hFE 100 100 45 10 250 200 90 25 fT -- 120 -- MHz COBO tON -- -- 48 39 -- -- pF tOFF -- 370 -- DC Current Gain (Note 9) Transition Frequency Output Capacitance (Note 9) Switching Times Note: ns Test Condition IC = -100A IC = -1A, RB 1k IC = -10mA IE = -100A VCB = -80V VCB = -80V, TA = +100C VCB = -80V VCB = -80V, TA = +100C VEB = -6V IC = -0.1A, IB = -10mA IC = -1A, IB = -100mA IC = -2A, IB = -200mA IC = -5A, IB = -500mA IC = -5A, IB = -500mA IC = -5A, VCE = -1V IC = -10mA, VCE = -1V IC = -2A, VCE = -1V IC = -5A, VCE = -1V IC = -10A, VCE = -1V VCE = -10V, IC = -100mA, f = 50MHz VCB = -10V, f = 1MHz VCC = -10V, IC = -1A, IB1 = -IB2 = 100mA 9. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. ZXTP2012G Document number: DS33712 Rev. 2 - 2 4 of 7 www.diodes.com December 2015 (c) Diodes Incorporated ZXTP2012G Typical Electrical Characteristics (@TA = +25C, unless otherwise specified.) 1 0.5 Tamb=25C IC/IB=10 0.4 - VCE(SAT) (V) - VCE(SAT) (V) IC/IB=50 100m IC/IB=20 IC/IB=10 0.3 100C 0.2 25C 0.1 10m 1m -55C 10m 100m 1 0.0 1m 10 - IC Collector Current (A) 10m 300 1.4 IC/IB=10 250 200 25C 150 0.6 100 -55C 50 0.2 0.0 1m 10m 100m 1 10 0 1.2 -55C - VBE(SAT) (V) 1.0 Typical Gain (hFE) Normalised Gain 100C 0.4 10 1.4 VCE=1V 0.8 1 VCE(SAT) v IC VCE(SAT) v IC 1.2 100m - IC Collector Current (A) 1.0 25C 0.8 0.6 100C 0.4 1m 10m 100m 1 10 - IC Collector Current (A) - IC Collector Current (A) hFE v IC VBE(SAT) v IC 1.4 1.2 VCE=1V - VBE(ON) (V) -55C 1.0 25C 0.8 0.6 0.4 1m 100C 10m 100m 1 - IC Collector Current (A) 10 VBE(ON) v IC ZXTP2012G Document number: DS33712 Rev. 2 - 2 5 of 7 www.diodes.com December 2015 (c) Diodes Incorporated ZXTP2012G Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. SOT223 D Q b1 C E E1 Gauge Plane 0.25 Seating Plane e1 L b A A1 0 -1 0 e SOT223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b 0.60 0.80 0.70 b1 2.90 3.10 3.00 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e 4.60 e1 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm 7 7 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. SOT223 X1 Dimensions Value (in mm) C 2.30 C1 6.40 X 1.20 X1 3.30 Y 1.60 Y1 1.60 C2 8.00 Y1 C1 Y2 Y X ZXTP2012G Document number: DS33712 Rev. 2 - 2 C 6 of 7 www.diodes.com December 2015 (c) Diodes Incorporated ZXTP2012G IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2015, Diodes Incorporated www.diodes.com ZXTP2012G Document number: DS33712 Rev. 2 - 2 7 of 7 www.diodes.com December 2015 (c) Diodes Incorporated