TEMIC Siliconix 2N 7089 P-Channel Enhancement-Mode Transistor Product Summary Viprypss () Tps(on) (82) Ip (A) 100 0.30 -10 TO-257AB s Hermetic Package O 7] Case Isolated D GDS Top View P-Channel MOSFET Absolute Maximum Ratings (Tc = 25C Unless Otherwise Noted) Parameter ey Symbol foe Amit [ Unit. Drain-Source Voltage Vps ~100 Gate-Source Voltage Vos +20 Vv Te = 25C -10 Continuous Drain Current (Ty = 150C) Te 2 100C Ip =F A Pulsed Drain Current Ipm -40 To = 25C 60 Maximum Power Dissipation To= 100C Pp 7 WwW Operating Junction and Storage Temperature Range Ty, Tag 55 to 150 C Lead Temperature (1/;5 from case for 10 sec.) TL 300 . Thermal Resistance Ratings Parameter <6 | Symbol | Typical =~ | Maximum. | Unit Maximum Junction-to-Ambient Ria 80 Maximum Junction-to-Case Rinc 2.0 Cw Case-to-Sink Rincs 1.0 P-36731Rev. B (05/30/94) 6-209 Me 8254735 0018395 b43 N-/P-Channel MOSFETsTEMIC 2N7089 Siliconix Specifications (Ty = 25C Unless Otherwise Noted) Symbol Test Condition Min Typ* Drain-Source Breakdown Voltage Voasrypss Ves = OV, Ip = -250 pA 100 : | Vv Gate Threshold Voltage Vascth) Vps = Ves Ip = 250 pA -2.0 -4.0 | Gate-Body Leakage Ioss Vps = OV, Vas = 20V +100 | nA | Vps = 80 V, Ves = 0V -25 Zero Gate Voltage Drain Current Ipss v VY, VTo De 750 pA Ds = 80 V, Ves = OV, Tr = - On-State Drain Current? Ip(eny Vps = -10 V, Vgs = -10V -10 A Ves = -10 ViIp = -6.7A 0,25 0.30 Drain-Source On-State Resistance FDS(on) 7 VI STAT, 15C rT 053 Q Gs = 10V, Ip = -6. T= 5 : Forward Transconductance Vps = -15 V,Ip = -6.7A Input Capacitance Css Output Capacitance Coss Vas = 0V, Vps = -25 V,f = 1 MHz 280 pF Reverse Transfer Capacitance Crass 105 Total Gate Charge* Q, 24 40 Gate-Source Charge Qgs Vps = 50 V, Vag = ~10 V, Ip = -10A 3.4 6.0 nc Gate-Drain Charge Qea 13.5 20 Turn-On Delay Time* taon) 9 60 Rise Time tr Vpp = -S0V,RL=58 50 140 Turn-Off Delay Time tae Ip = -10A, Von = 10V,Rg = 758 @ | wo | Fall Time* Continuous Current Pulsed Current Diode Forward Voltage? Vsp Ip=10A, Vos = 0V ~2.0 Vv Reverse Recovery Time te, 110 250 ns . Ip = 10 A, di/dt = 100 A/us Reverse Recovery Charge Qn 04 pc Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width = 300 us, duty cycle = 2%. . Independent of operating temperature. 6-210 P-36731Rev. B (05/30/94) Mm 8254735 0018396 SotTEMIC Siliconix 2N7089 Typical Characteristics (25C Unless Otherwise Noted) Negative signs omitted for clarity. Output Characteristics 12.5 Ves= tov ov 10.0 < 3 & 75 5 oO & & 50 ' a 415 0 0 2 4 6 8 10 Vps Drain-to-Source Voltage (V) 5 Transconductance Te = -55C 4 e 8 Ss 3 3 au 8 5 2 & | a 1 0 0 5 10 15 20 15 Ip Drain Current (A) Capacitance 2500 2000 & = 2 1500 = 8 1000 I oO 500 0 10 20 30 40 50 Vps Drain-to-Source Voltage (V) P-36731Rev. B (05/30/94) MB 6254735 0018397 4b Ip - Drain Current (A) Tyson) On-Resistance (2) Vos Gate-to-Source Voltage (V) Transfer Characteristics 10 T t Te= St] / asc .l / 8g / / 125C 6 4 2 0 S 0 2 4 6 8 10 Vos Gate-to-Source Voltage (V) 10 On-Resistance vs. Drain Current 08 0.6 Vos =10V a4 GS w4 20V 02 0 0 10 20 30 40 50 Ip Drain Current (A) Gate Charge 15.0 ane 12.5 10.0 15 5.0 2.5 0 10 20 30 40 50 Q, Total Gate Charge (nC) 6-211 N-/P-Channel MOSFETsTEMIC 2N7089 Siliconix Typical Characteristics (25C Unless Otherwise Noted) Negative signs omitted for clarity. 2.00 On-Resistance vs. Junction Temperature 200 Source-Drain Diode Forward Voltage ~. LIS 100 Ty = 25C a < g _ 150 5 Ty = 150C 23 5 83 oO me 1.25 8 ce a 10 og a 1.00 I & a e 0.75 0.50 0 -50 ~10 30 70 110 150 0 1 2 3 4 5 Ty ~ Junction Temperature (C) Vsp Source-to-Drain Voltage (V) Thermal Ratings Ds Maximum Drain Current vs. Case Temperature 50 Safe Operating Area 10 ps 100 ps Limited 10.0 ~ y = < S(on) 2 ge 10 E 75 PS 2 = 3 Oo % ~ 5 & s Qa 50 N a 10 ms I { a \ 8 2.5 1 100 ms de 0 0 25 50 75 100 125 150 1 10 100 200 Tc ~ Case Temperature (C) Vps - Drain-to-Source Voltage (V) 2 Normalized Thermal Transient Impedance, Junction-to-Case 5 Duty Cycle = 0.5 58 Ba 02 fF : Se 0.1 : q oa o ge E 3 Zz Single Pulse 0.01 10-5 10-4 10-3 10-2 1071 1 3 Square Wave Pulse Duration (sec) 6-212 P-36731Rev. B (05/30/94) MH 6254735 0016398 352