BC847BVN,115 - NEXPERIA

BC847BVN

NPN/PNP general purpose transistor

20 May 2019 Product data sheet

1. General description

NPN/PNP transistor pair in a SOT666 plastic package.

2. Features and benefits

•300 mW total power dissipation

•Very small 1.6 mm x 1.2 mm ultra thin package

•Excellent coplanarity due to straight leads

•Replaces two SC-75/SC-89 packaged transistors on same PCB area

•Reduced required PCB area

•Reduced pick and place costs.

•AEC-Q101 qualified

3. Applications

•General purpose switching and amplification

•Switch mode power supply complementary MOSFET driver

•Complementary driver for audio amplifiers.

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor; for the PNP transistor with negative polarity

VCEO collector-emitter

voltage

open base - - 45 V

ICcollector current - - 100 mA

ICM peak collector current single pulse; tp ≤ 1 ms - - 200 mA

hFE DC current gain VCE = 5 V; IC = 2 mA 200 - 450

Nexperia BC847BVN

NPN/PNP general purpose transistor

5. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 E1 emitter TR1

2 B1 base TR1

3 C2 collector TR2

4 E2 emitter TR2

5 B2 base TR2

6 C1 collector TR1

1 2 3

456

SOT666

sym

019

E1 C2

TR1

TR2

6. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

BC847BVN SOT666 plastic, surface-mounted package; 6 leads; 0.5 mm pitch; 1.6

mm x 1.2 mm x 0.55 mm body

SOT666

7. Marking

Table 4. Marking codes

Type number Marking code

BC847BVN 13

Product data sheet 20 May 2019 2 / 11

Nexperia BC847BVN

NPN/PNP general purpose transistor

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per transistor; for the PNP transistor with negative polarity

VCBO collector-base voltage open emitter - 50 V

VCEO collector-emitter voltage open base - 45 V

VEBO emitter-base voltage open collector - 5 V

ICcollector current - 100 mA

ICM peak collector current single pulse; tp ≤ 1 ms - 200 mA

IBM peak base current - 200 mA

Ptot total power dissipation Tamb ≤ 25 °C [1] - 200 mW

Tjjunction temperature - 150 °C

Tamb ambient temperature -65 150 °C

Tstg storage temperature -65 150 °C

Per device

Ptot total power dissipation Tamb ≤ 25 °C [1] - 300 mW

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

Rth(j-a) thermal resistance from

junction to ambient

in free air [1] [2] - - 416 K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Reflow soldering is the only recommended soldering method.

Product data sheet 20 May 2019 3 / 11

Nexperia BC847BVN

NPN/PNP general purpose transistor

10. Characteristics

Table 7. Characteristics

Tamb = 25 °C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Per transistor; for the PNP transistor with negative polarity

VCB = 30 V; IE = 0 A - - 15 nAICBO collector-base cut-off

current VCB = 30 V; IE = 0 A; Tj = 150 °C - - 5 µA

IEBO emitter-base cut-off

current

VEB = 5 V; IC = 0 A - - 100 nA

hFE DC current gain VCE = 5 V; IC = 2 mA 200 - 450

IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C - - 100 mVVCEsat collector-emitter

saturation voltage IC = 100 mA; IB = 5 mA; Pulsed test: tp ≤

300 μs; δ ≤ 0.02

- - 300 mV

VBEsat base-emitter saturation

voltage

IC = 10 mA; IB = 0.5 mA - 755 - mV

fTtransition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz 100 - - MHz

NPN transistor

VBE base-emitter voltage VCE = 5 V; IC = 2 mA 580 655 700 mV

Cccollector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz - - 1.5 pF

Ceemitter capacitance VEB = 500 mV; IC = 0 A; ic = 0 A;

f = 1 MHz

- 11 - pF

PNP transistor

VBE base-emitter voltage VCE = -5 V; IC = -2 mA -600 -655 -750 mV

Cccollector capacitance VCB = -10 V; IE = 0 A; ie = 0 A;

f = 1 MHz; Tamb = 25 °C

- - 2.2 pF

Ceemitter capacitance VEB = -500 mV; IC = 0 A; ic = 0 A;

f = 1 MHz

- 10 - pF

400

600

200

mld703

10- 1 1 10 IC (mA)

hFE

102103

(1)

(3)

(2)

VCE = 5 V

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

Fig. 1. NPN TR1: DC current gain as a function of

collector current; typical values

200

1200

400

600

800

1000

mld704

10- 2 10- 1 1

IC (mA)

VBE

10 102103

(3)

(2)

(1)

VCE = 5 V

(1) Tamb = −55 °C

(2) Tamb = 25 °C

(3) Tamb = 150 °C

Fig. 2. NPN TR1: Base-emitter voltage as a function of

collector current; typical values

Product data sheet 20 May 2019 4 / 11

Nexperia BC847BVN

NPN/PNP general purpose transistor

104

103

102

mld705

10- 1 1 10 IC (mA)

VCEsat

(mV)

102103

(2)

(1)

(3)

IC/IB = 20

(1) Tamb = 150°C

(2) Tamb = 25 °C

(3) Tamb = -55 °C

Fig. 3. NPN TR1: Collector-emitter saturation voltage

as a function of collector current; typical values

200

1200

400

600

800

1000

mld706

110- 1

IC (mA)

VBEsat

(mV)

10 102103

(1)

(3)

(2)

IC/IB = 20

(1) Tamb = −55 °C

(2) Tamb = 25 °C

(3) Tamb = 150 °C

Fig. 4. NPN TR1: Base-emitter saturation voltage as a

function of collector current; typical values

1000

200

400

600

800

mld699

- 10- 2 - 10- 1

(1)

- 1

IC (mA)

hFE

- 10 - 102- 103

(2)

(3)

VCE = -5 V

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

Fig. 5. PNP TR2: DC current gain as a function of

collector current; typical values

- 200

- 1200

- 400

- 600

- 800

- 1000

mld700

- 10- 2 - 10- 1

(1)

- 1

IC (mA)

VBE

- 10 - 102- 103

(3)

(2)

VCE = -5 V

(1) Tamb = −55 °C

(2) Tamb = 25 °C

(3) Tamb = 150 °C

Fig. 6. PNP TR2: Base-emitter voltage as a function of

collector current; typical values

Product data sheet 20 May 2019 5 / 11

Nexperia BC847BVN

NPN/PNP general purpose transistor

- 104

- 103

- 102

- 10

mld701

- 10- 1 - 1 - 10 IC (mA)

VCEsat

(mV)

- 102- 103

(1)

(2)

(3)

IC/IB = 20

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = -55 °C

Fig. 7. PNP TR2: Collector-emitter saturation voltage

as a function of collector current; typical values

- 200

- 1200

- 400

- 600

- 800

- 1000

mld702

- 1- 10- 1

IC (mA)

VBEsat

(mV)

- 10 - 102- 103

(1)

(3)

(2)

IC/IB = 20

(1) Tamb = −55 °C

(2) Tamb = 25 °C

(3) Tamb = 150 °C

Fig. 8. PNP TR2: Base-emitter saturation voltage as a

function of collector current; typical values

11. Test information

Quality information

This product has been qualified in accordance with the Automotive Electronics Council (AEC)

standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in

automotive applications.

Product data sheet 20 May 2019 6 / 11

Nexperia BC847BVN

NPN/PNP general purpose transistor

12. Package outline

UNIT bpc D E e1HELpw

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION ISSUE DATE

04-11-08

06-03-16

IEC JEDEC JEITA

mm 0.27

0.17

0.18

0.08

1.7

1.5

1.3

1.1 0.5

1.0 1.7

1.5 0.1

0.1

DIMENSIONS (mm are the original dimensions)

0.3

0.1

SOT666

pin 1 index

detail X

0 1 2 mm

scale

0.6

0.5

1 2 3

456

Plastic surface-mounted package; 6 leads SOT666

Y S

wMA

Fig. 9. Package outline SOT666

Product data sheet 20 May 2019 7 / 11

Nexperia BC847BVN

NPN/PNP general purpose transistor

13. Soldering

solder lands

placement area

occupied area

solder paste

sot666_fr

2.75

2.45

2.1

1.6

0.4

(6×)

0.55

(2×)

0.25

(2×)

0.6

(2×)

0.65

(2×)

0.3

(2×)

0.325

(4×)

0.45

(4×)

0.5

(4×)

0.375

(4×)

1.72

1.7

1.075

0.538

Dimensions in mm

Fig. 10. Reflow soldering footprint for SOT666

Product data sheet 20 May 2019 8 / 11

Nexperia BC847BVN

NPN/PNP general purpose transistor

14. Revision history

Table 8. Revision history

Data sheet ID Release date Data sheet status Change notice Supersedes

BC847BVN v.3 20190520 Product data sheet - BC847BVN v.2

Modifications: •The format of this data sheet has been redesigned to comply with the identity guidelines of

Nexperia.

•Legal texts have been adapted to the new company name where appropriate.

BC847BVN v.2 20011107 Product data sheet - BC847BVN v.1

BC847BVN v.1 20010830 Product data sheet - -

Product data sheet 20 May 2019 9 / 11

Nexperia BC847BVN

NPN/PNP general purpose transistor

15. Legal information

Data sheet status

Document status

[1][2]

Product

status [3]

Definition

Objective [short]

data sheet

Development This document contains data from

the objective specification for

product development.

Preliminary [short]

data sheet

Qualification This document contains data from

the preliminary specification.

Product [short]

data sheet

Production This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the internet at https://www.nexperia.com.

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Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Nexperia makes no representation

or warranty that such applications will be suitable for the specified use

without further testing or modification.

Customers are responsible for the design and operation of their applications

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

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Notice: All referenced brands, product names, service names and

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Product data sheet 20 May 2019 10 / 11

Nexperia BC847BVN

NPN/PNP general purpose transistor

Contents

1. General description......................................................1

2. Features and benefits.................................................. 1

3. Applications.................................................................. 1

4. Quick reference data....................................................1

5. Pinning information......................................................2

6. Ordering information....................................................2

7. Marking.......................................................................... 2

8. Limiting values............................................................. 3

9. Thermal characteristics............................................... 3

10. Characteristics............................................................ 4

11. Test information..........................................................6

12. Package outline.......................................................... 7

13. Soldering..................................................................... 8

14. Revision history..........................................................9

15. Legal information......................................................10

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release: 20 May 2019

Product data sheet 20 May 2019 11 / 11