JANTXV2N6385 - Microsemi Corp.

2N6383 – 2N6385

Available on

commercial

versions

NPN Darlington Pow er Si licon Transisto r

Qualified per MIL-PRF-19500/523

Quali f i ed Levels:

JAN , JANTX, and

JANTXV

DESCRIPTION

This high speed NPN transis tor is rat ed at 10 amps and is milit ar y qualified up to the JANTXV

level. This TO-204AA isolat ed pack age features a 1 80 degree lead orientation.

TO-204AA (TO-3)

Package

Important: For the latest information, visit our website http://www.microsemi.com.

FEATURES

• JEDEC registered 2N6383 through 2N6385

• JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/523.

(See part nomenclature for all available options.)

• RoHS compliant versions are available (commercial grade only)

APPLICATIONS / BENE FITS

• Mil itary and other high reliability applications

• High frequency response

• TO-204AA case with i solated terminals

MAXIMUM RATINGS @ TA = +2 5 oC unless otherwise noted

MSC – Lawrence

6 Lake Street,

Lawrence, MA 01841

1-800-446-1158

(978) 620-2600

Fax: (978) 689-0803

MSC – Ireland

Gort Road Business Par k,

Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044

Fax: +353 (0) 65 6822298

Website:

www.microsemi.com

Parameters/Test Conditions

Symbol

Value

Unit

Junction and Storage Temperature

TJ and TSTG

-55 to +175

oC

Thermal Resistance Junction-to-Case

RӨJC

1.75

oC/W

Collector-Emitter Voltage 2N6383

2N6384

2N6385

VCEO 40

60

80

V

Collector-Bas e Voltage 2N6383

2N6384

2N6385

VCBO 40

60

80

V

Emitter-Base Voltage

VEBO

5

V

Total Power Dissipation @ TA = +25

o

C

(1)

@ TC = +25

o

C

(2)

PT 6.0

100

W

Base Current

IB

0.25

A

Collector Current

IC

10

A

Notes: 1. De rat e li ne ar ly 34.2 mW/oC above TA > +25 oC.

2. De rate li ne ar ly 571 mW/oC above TC > +25 oC.

2N6383 – 2N6385

M ECHANICAL and PACKAGI NG

• CASE: Industry standard TO-204AA (TO-3), hermetically sealed, 0.040 inch diameter pins

• FINISH: Solder dipped tin-lead over nickel plated alloy 52 or RoHS compliant matte-tin plating. Solderable per MIL-STD-750

method 2026.

• POLARITY: NPN (see schematic)

• MOUNTING HARDWARE: Consult factory for optional insulator and sheet metal screw s

• WEIGHT: Approximately 15 grams

• See package dimensions on last page.

PART NOMENCLAT URE

JAN 2N6283 (e3)

Reliability Level

JAN = J AN Level

JANTX = JANTX Level

JANTXV = JANTXV Level

Blank = Commerc ial

JEDEC type number

(see Electrical Characteristics

table)

RoHS Compliance

e3 = RoHS compliant (available

on commercial grade only)

Blank = non-RoHS compliant

SYMBOLS & DEFINIT IONS

Symbol

Definition

IB

Base cur rent: The value of the dc current into the base terminal .

IC

Collector current: The value of the dc curr ent into the collector terminal.

IE

Emitter current: The value of the dc current into the emitter terminal.

TC

Case temperature: The temperature measured at a specified location on the case of a device.

VCB

Collector-base voltage: The dc voltage between the collector and the base.

VCBO

Collector-base voltage, base open: The voltage between the collector and base terminals when the emitter terminal is

open-circuited.

VCC

Collector-supply voltage: The suppl y vol tage applied to a circuit c onnected to the collector.

VCEO

Collector-emitter voltage, base open: The voltage between the collector and the emitter terminals when the base

terminal is open-circuited.

VCE

Collector-emitter voltage: The dc voltage between the collector and the emitter.

VEB

Emitter-base voltage: The dc voltage between the emitter and the base.

VEBO Emitter-base vol tage, collector open: The voltage between the emitter and base terminals with the collector terminal

open-circuited.

2N6383 – 2N6385

ELECTRICAL CHARACTE RISTI CS @ TA = +25 oC unless otherwise noted

Characteristics Symbol Min. Max. Unit

OFF CHARACTERISTICS

Collector-Emit ter Breakdown Voltage

IC = 200 mA 2N6383

2N6384

2N6385 V(BR)CEO 40

60

80 V

Collector-Emit ter Breakdown Voltage

IC = 200 mA, RBB = 100 Ω 2N6383

2N6384

2N6385 V(BR)CER 40

60

80 V

Collector-Emit ter Cut off Current

VCE = 40 V

VCE = 60 V

VCE = 80 V

2N6383

2N6384

2N6385

ICEO

1.0

mA

Collector-Emit ter Cut off Current

VCE = 40 V, VBE = 1.5 V

VCE = 60 V, VBE = 1.5 V

VCE = 80 V, VBE = 1.5 V

2N6383

2N6384

2N6385

ICEX

100

µA

Emitter-Base C utoff Current

VEB = 5.0 V

IEBO

5.0 mA

Collector-Emit ter Cut off Current

VCE = 40 V

VCE = 60 V

VCE = 80 V

2N6383

2N6384

2N6385

ICBO

1.0

mA

ON CHARACTERISTICS

Forward-Cu r rent Transfer Ratio

IC = 5.0 A, VCE = 3.0 V

IC = 10 A, VCE = 3.0 V

IC = 5.0 A, VCE = 3.0 V, TA = -55 ºC

hFE

1,000

100

200

20,000

Collector-Emitter Saturation Voltage

IC = 5.0 A, IB = 10 mA

IC = 10 A, IB = 0.1 A

VCE(sat)

2.0

3.0

V

Base-Emi tt er Voltag e Non-saturated

VCE = 3.0 V, IC = 5.0 A

VCE = 3. 0 V, IC = 10 A

VBE(on) 2.8

4.5 V

DYNAMIC CHARACTERISTICS

Magn itude of Common Emitter Small-Signal Short-Circuit

Forward Current Transfer Ratio

I

C

= 1.0 A, V

CE

= 5.0 V, f = 1.0 MHz

|h

fe

|

20

300

Output Capacitance

V

CB

= 10 V, I

E

= 0, f = 100 kHz ≤ f ≤ 1 MHz

C

obo

200

pF

2N6383 – 2N6385

ELECTRICAL CHARACTE RISTI CS @ TC = 25 oC unless other wis e noted. (c ontinued)

SWITCHING CHARACTERISTICS

Turn-On Ti me

VCC = 30 V, IC = 5.0 A; IB= 20 mA

ton

2.5

µs

Turn-Off Time

VCC = 30 V, IC = 5.0 A; IB1= -IB2 = 20 mA

toff

10

µs

SAFE OPERATING AREA (See Figures 1 and 2 and MIL-STD-750,Test Method 3053)

DC Te sts

TC = +2 5 °C, t = 1 s econd , 1 Cycle

Test 1

VCE = 10 V, IC = 10 A

Test 2

VCE = 30 V, IC = 3.33 A

Test 3

VCE = 40 V, IC = 1.5 A (2N6383)

VCE = 60 V, IC = 0.4 A (2N6384)

VCE = 80 V, IC = 0.16 A (2N6385)

2N6383 – 2N6385

SAFE OPERATING AREA

VCE – C ollector t o Emitter Voltage (Volt s)

FIGURE 1

Max i mum Safe Operating Graph (continuous dc)

L – Inductance (M i llihen r ies)

FIGURE 2

S afe Op er ating Area for Swit ch i ng Between Saturation an d Cutoff (u nclam ped induc tive load )

IC = Collector Current (Amperes)

2N6383 – 2N6385

PACKAGE DIMENSIONS

NOTES:

1. Dimensions are in inches. Millimeters are given for information only.

2. Terminal 1 is the base and terminal 2 is the emitter. The c ollector shall be elec trically connected to the case.

3. Body contour is optional within zone defined by dimension CD.

4. Applies to both ends.

5. Applies to both terminals.

6. Dimension LD applies between L1 and LL. Lead diameter shall not exceed twice dimension LD w ithin dimension L1.

Diameter is uncontrolled in dimension L1.

7. Two holes .

8. These dimensions shall be measured at points 0.050 inch (1.27 mm) to 0.055 inch (1.40 mm) below the seating plane.

When gauge is not used, measurement shall be made at seating plane.

9. The seating plane of the header shall be flat within 0.001 inch (0.03 mm) concave to 0.004 inch (0.10 mm) convex inside

a 0.930 inch (23.62 mm) diameter circle on the center of the header and flat within 0.001 inch (0.03 mm) concave to 0.006

inch (0.15 mm) conv ex ov erall.

10. Mounting holes shall be deburred on the seating plane side.

11. In acc ordance with ASME Y14.5M, diameters are equivalent to Φx symbology.

See schematic on next page

Dimensions

Ltr

Inches

Millimeters

Notes

Min

Max

Min

Max

CD

-

0.875

-

22.23

3

CH

0.250

0.450

6.35

11.43

HR

0.495

0.525

12.57

13.34

HR1

0.131

0.188

3.33

4.78

4

HT

0.060

0.135

1.52

3.43

LD

0.038

0.043

0.97

1.09

5, 6

LL

0.312

0.500

7.92

12.70

5

LL1

-

0.050

-

1.27

5, 6

MHD

0.151

0.161

3.84

4.09

7

MHS

1.177

1.197

29.90

30.40

PS

0.420

0.440

10.67

11.18

8, 9

PS1

0.205

0.225

5.21

5.72

5, 8, 9

S1

0.655

0.675

16.64

17.15

8

2N6383 – 2N6385

SCHEMATIC