MIL-PRF-19500/478L
w/AMENDMENT 1
19 December 2017
SUPERSEDING
MIL-PRF-19500/478L
27 January 2017
PERFORMANCE SPECIFICATION SHEET
DIODE, SILICON, POWER RECTIFIER, ULTRA FAST RECOVERY,
TYPES 1N5812, 1N5814, 1N5816, AND R VERSIONS,
JAN, JANTX, JANTXV, JANHC, JANKC, AND JANS
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for silicon, fast recovery power rectifier diodes.
Four levels of product as surance (JAN, JANTX, JANTXV, and JANS) are provided for each device type as specified
in MIL-PRF-19500. Two product assurance JANHC and JANKC are provided for unencapsulated devices.
* 1.2 Package outlines and die topography . The device packages for the encapsulated device types are as follows:
DO-4 in accordance with figure 1 and button tab (BT) In accordance with figure 2. The dimensions and topography
for JANHC and JANKC unencapsulated die are as follows: The A version die in accordance with fi gure 3, the B
version die in accorda nce w ith figure 4, the C version die in accordance with figure 5, the D, E, and F versions die in
accordance with figure 6, and G version in accordance with figure 7.
* 1.3 Maximum ratings.
Types
(1)
VR
VRWM
I
O
(1)
TC =
+100°C
IFSM
tp = 8.3 ms
TC = +100°C
t
rr
Rθ
JC
T
J
and
TSTG
1N5812, BT, R
1N5814, BT, R
1N5816, BT, R
V dc
50
100
150
V (pk)
50
100
150
A dc
20
20
20
A(pk)
400
400
400
ns
35
35
35
°C/W
1.5
°C
-65°C to
+175°C
(1) Derate linearly, 250 mA/°C from +100°C to +150°C and 300 mA/°C above +150°C.
AMSC N/A FSC 5961
INCH-POUND
Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online databas e at https://assist.dla.mil.
necessary to comply with this document shall be
completed by 19 March 2018.
MIL-PRF-19500/478L
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1.5 Part or Identifying Number (PIN). The PIN is in accordance with MIL-PRF-19500, and as spec ifie d herein.
See 6.5 for PIN construction example, 6.6 for a list of available PINs, and 6.4 for supersess i on inform at io n.
1.5.1 JAN certification mark and quality level for encapsulated devices. The quality level designators for
encapsulated devices that are applicable for this specification sheet from the lowest to the highest level are as
follows: “JAN”, “JANTX”, “JANTXV” and "JANS".
1.5.2 Quality level designators for unencapsulated devices (die). The quality level designators for unencapsulated
devices (die) that are applicable for this specification sheet from the lowest to the highest level are as follows:
"JANHC" and "JANKC".
1.5.3 Dev ice ty pe. The designation system for the device types of diodes covered by this specification sheet are
as follows.
1.5.3.1 First number and first letter symbols. The semiconductors of this specification sheet use the first number
and letter symbols "1N".
1.5.3.2 Second number symbols. The second number symbols for the semiconductors covered by this
specification sheet are as follows: "5812", "5814", and "5816".
* 1.5.4 Suffix symbols. The following suffix letters are incorporated in the PIN in the order listed in the table as
applicable:
A blank first suffix symbol indicates a stud mount package (see fi gure 1).
R R suffix devices indicates a stud mount package with the threaded terminal as the Anode (see figure 1).
BT BT suffix devices indicates a button tab (figure 2).
1.5.5 Lead finish. The lead finishes applicable to this specification sheet are listed on QML-19500.
1.5.6 Die identifiers for unencapsulated devices (manufacturers and critical interface identifiers). T he
manufactur er die ide ntifiers that are applic abl e for thi s specif ication sheet are "A" , “B”, “C”, “D”, “E” and "F".
MIL-PRF-19500/478L
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Dimensions
Notes
Inches
Millimeters
Min
Max
Min
Max
A
1
.250
6.35
b
.250
6.35
3
C
.018
.065
0.46
1.65
CD
.265
.424
6.74
10.77
CD
1
.265
.437
6.74
11.10
CH
.300
.405
7.62
10.28
HF
.424
.437
10.77
11.10
HT
.075
.175
1.91
4.44
OAH
.600
.800
15.24
20.32
SD
4, 6
SL
.422
.453
10.72
11.50
SU
.078
1.98
5
øT
.066
.103
1.68
2.62
UD
.163
.189
4.14
4.80
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for general information only.
3. Angular orientation and contour of this terminal is undefined.
4. Pitch diamet er .190-32 UNF-2A (coated) - .1697 (4.310 mm) .
5. Length of incomplete or undercut threads of UD.
6. Anode for R suffix devices.
7. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 1. Physical dimensio ns (DO -4).
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Dim
Min
Max
Dim
Min
Max
A
0.125”
0.150”
P1
0.145”
0.155”
A1
—
0.020”
P2
0.055”
0.075”
∅B
—
0.190”
P3
0.090”
0.110”
C
0.190”
0.210”
P4
0.060” REF
C1
0.280” REF
T
0.008”
0.012”
R
0.015” REF
Notes:
* Diode body profile may differ from the one shown for illustration
**Dimensions prior to solder dipping
Polarity : Normal = Anode to Tab, Reverse = Cathode to Tab
* Figutre 2 Physical Dimensions, Button Tab ( BT)
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Dimensions
Symbol
Inches
Millimeters
Min
Max
Min
Max
A
.130
.133
3.30
3.37
B
.114
.117
2.89
2.97
C
.009
.010
0.228
0.254
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for general information only.
3. The physical characteristics of the die are: Metallization {front (anode), bac k (cath ode)}
consists of: Ag thickness = 3,000 Å minimum, NI thickness = 1,500 Å minimum, Cr thickness
= 800 Å minimum.
4. Requiremen ts in acc ordan ce with MIL-PRF-19500 (appendix E) are performed in a DO-4 pac kage (see
6.5).
5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 3. Physi cal d i mensio ns JAN C die dim en sion s (A-version).
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Dimensions
Symbol
Inches
Millimeters
Min
Max
Min
Max
A
.130
.143
3.30
3.63
B
.114
.133
2.89
3.37
C
.009
.010
0.228
0.254
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for general information only.
3. The physical characteristics of the die are: Metallization {front (anode), back
(cathode)} consists of: Ag thickness = 3,000 Å minimum, NI thickness = 1,500 Å
minimum, Cr thickness = 800 Å minimum, optionally Ti thickness = 300 Å minimum.
4. Requiremen ts in acc ordan ce with MIL-PRF-19500 (appendix H) are performed in a
DO-4 package (see 6.5).
5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 4. Physical di men sio ns JANC die dim en sion s (B-version).
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Dimensions
Symbol
Inches
Millimeters
Min
Max
Min
Max
A
.152
.156
3.86
3.96
B
.126
.130
3.20
3.30
C
.008
.012
0.203
0.31
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for general information only.
3. The physical characteristics of the die are: Metallization (front (anode)), con sists
of: AL thickness = 60,000 Å minimum, (back, (cathode)) consists of: AU thickness
= 2,500 Å minimum.
4. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 5. Physical dimen sions JANC (JANHC and JANKC) die dimensions (C-version).
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Dimensions
Symbol
Inches
Millimeters
Min
Max
Min
Max
A
.136
.142
3.45
3.61
B
.117
.123
2.97
3.12
C
.007
.013
0.18
0.33
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for general information only.
3. The metallization consi sts of:
D version: front (anode) - aluminum; back (cathode) - gold.
E version: front (anode) - aluminum; back (cathode) - silver.
F version: front (anode) - silver; back (cathode) - silver.
4. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 6. Physical dimensions JANC (JANHC and JANKC) die dimensions (D, E, and F - versions).
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Ltr Dimensions
Inches Millimeters
Min Max Min Max
A 0.162 0.168 4.11 4.27
B 0.128 0.134 3.25 3.40
C 0.008 0.012 0.20 0.30
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for general information only.
3. Anode is Ti (1.2kÅ) / Ni (1.8kÅ) / Ag 30kÅ.
4. Cathode is Ti (1.2kÅ) / Ni (1.8kÅ) / Ag 30kÅ.
* FIGURE 7. Physical dimensions JANC (JANHC and JANKC) die dimensions (G version).
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2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3 and 4 of this
specification, whether or not they are listed.
2.2 Govern ment document s.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Copies of these documents are available online at http://quicksearch.dla.mil).
2.3 Order of prece den ce. Unless otherwise noted herein or in the contract, in the event of a conflict between the
text of this document and the references cited herein, the text of this document takes precedence. Nothing in this
document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer’s list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviatio ns, sy mbol s, and defi niti ons used herein shall be as
specified in MIL-PRF-19500.
* 3.4 Interfa ce and phy si cal dim ensi ons . The interface and physical dimensions shall be as specified in
MIL-PRF-19500 and on figure 1 for DO-4 and on fi gur e 2 for (BT) and figure 3, figure 4, figure 5, figure 6, and figure 7
(JANHC and JANKC.
3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.5 Marking. Marking shall be in accordance with MIL-PRF-19500.
3.5.1 Polarity. Polarity shall be in accordance with MIL-PRF-19500. The reversed units shall also be marked with
an R following the last digit in the type number.
3.6 Electr ica l perf or man ce ch aract er is tic s. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3 and table I herein.
3.7 Electrical test requirements. The electrical test requirements shall be the subgroup s sp ecif ied in table I herein.
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
MIL-PRF-19500/478L
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4. VERIFICATION
4.1 Clas sifi cat ion of insp ect io ns. The inspection requirements specified herein are classified as follows:
a. Qualificat ion in spe ctio n (s ee 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified
herein.
4.2.1 Gro up E qualifi cat ion. Group E inspection shall be performed for qualification or re-qualification only. In
case qualification was awarded to a prior revision of the specification sheet that did not request the performance of
table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on
the first inspection lot of this revision to main tain qualif ica t io n.
4.2.2 Screening J ANHC and JANKC. Screening shall be in accordance with appendix G of MIL-PRF-19500. As a
minimum, die shall be 100 percent probed in accordance with table I, subgroup 2 herein for IR1 and V(BR)1 only. VF1
and VF2 shall be performed on a sample of ten pieces mounted on a DO-4 (or equivalent) package.
4.3 Screen ing (JA NS, JANTXV, and JANTX levels only). Screening shall be in accordance with appendix E, table
E-IV of MIL-PRF-19500, and as specified herein. Specified electrical measurements shall be made in accordance
with table I herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen
Measurement
JANS level
JANTXV and JANTX level
(1) 3b
Surge, see 4.3.1.
Surge, see 4.3.1.
(2) 3c
Thermal impedance (see 4.3.2 and 4.4.1).
Thermal impedance (see 4.3.2 and 4.4.1).
4
Not applicable.
Not applicable.
9
Not applicable.
Not applicable.
10
Not applicable.
Not applicable.
(3) 11
VF2 and IR1.
VF2 and IR1.
12
Burn-in, see 4.3.3, method 1038 of
MIL-STD-750, test condition A.
t = 240 hours.
Burn-in, see 4.3.3, method 1038 of
MIL-STD-750, test condition A.
(3) 13
Subgroups 2 and 3 of table I herein;
∆IR1 ≤ 2.5 µA dc or 100 percent of initial value,
whichever is greater.
∆VF2 ≤ +0.05 V dc (pk) change from initi al value.
Subgroup 2 of table I herein;
∆IR1 ≤ 2.5 µA dc or 100 percent of initial value,
whichever is greater.
∆VF2 ≤ +0.05 V dc (pk) change from initi al value.
(1) Surge shall precede thermal response. These tests shall be performed anytime after screen 3 and before
screen 10.
(2) Thermal impedance need not be repeated for JANTX and JANTXV levels.
(3) IR1 measurement shall not be indicative of an open condition.
* (4) For BT packages PIND not applicable, Hermeticity may be satisfied by the use of method 2068
* (5) For DO-4 devices manufactured with a hermetic internal element Hermeticity and PIND testing not required.
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* 4.3.1 Surge current. Surge current, see method 4066, Condition A, of MIL-STD-750.
a. IFSM = 400 A, six surges, tp = 8.3 ms or rectang ular pul se of equiv al ent Irms.
b. IO = 0 A, VRMS = 0 V, duty factor 1 percent minimum TA = +25°C.
4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method
3101 or 4081 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW (VC and VH where
appropriate). Measurement delay time (tMD) = 70 µs max. See table II, subgroup 4 herein.
4.3.3 Burn-in. Burn-in conditions for all quality levels are as follows: method 103 8 of MIL-STD-750, test condition
A, TC = +125°C; VR = 80 to 85 percent of rated VR dc (see 1.3).
* 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. For BT
packages hermeticity may be satisfied by the use of test method 2068. For DO-4 device s manu fact ured w ith a
hermetic internal element Hermeticity testing not applicable.
* 4.4.1 Gro up A inspe ctio n. Group A inspection shall be conducted in accordance with appendix E, table E-V of
MIL-PRF-19500 and table I herein.
4.4.2 Gro up B inspe ctio n. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup test ing in tables E-VIA (JANS) and E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and as follows.
Electrical measurements (end-point s) shal l be in accord anc e with table I, subgroup 2 and the applicable step and
footnotes of table III herein.
* 4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500.
Subgroup Method Condition
* B3 4066 Condition A, TC = +100°C; tp < 8.3 ms; VR = rated VR (see 1.3) six 1/120 s
surges; 1 surge/minute maximum. IFSM = 400 A dc, IO = 20 A dc.
* B4 1037 2,000 cycles, 25 percent rated IO < IO applied < rated IO (see 4.5.2).
For BT devices Io= 2.8A minimum unheatsunk.
B5 1038 Condition A, t = 1000 hours, TC = +150°C VR = 80 percent of VRWM (pk)
(see 1.3). For irradiated devices, include trr as an end-poin t mea surement.
B8 1018 Only to be performed when organics or silicones are present in the device
package; n = 3, c = 0.
4.4.2.2 Group B inspection, table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500.
Subgroup Method Condition
* B2 4066 Condition A, TC = +100°C; tp < 8.3 ms; VR = rated VR (see 1.3) six 1/120 s
surges; 1 surge/minute maximum. IFSM = 400 A dc, IO = 20 A dc.
B3 1036 IF > 0.25 IO (see 4.5.2) 2,000 cycles. For irradiated devices, include trr as an
end-point measurement.
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* 4.4.3 Gro up C inspec tion . Group C inspection shall be conducted in accordance with the conditions specified for
subgroup test ing in table E-VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in
accordance with table I subgroup 2 and the applicable step of table III herein.
Subgroup Method Condition
C2 2036 Terminal strength: Test condition A; weight = 10 pounds; t = 15 s.
Bending stress: Test condition F, method B; weight = 3 pounds; t = 15 s.
Lead torque: Test condition D1; torque = 10 ounce-in ch es; t = 15 s.
Stud torque: Test condition D2; torque = 10 pound-inches; t = 15 s.
* BT Only: Lead Fatigue test Condition E
C5 4081 or RθJC = 1.5°C/W; tH ≥ 20 secon ds; heati ng curr e nt (IH) ≥ rated I O;
3101 tMD ≤ 250 µs; measurement current 10 mA ≤ IM ≤ 100 mA.
C6 1036 IF > 0.25 IO (see 4.5.2); 6,000 cy cle s, JANS only. For irradiated devices,
include trr as an end-point measurement.
C6 1038 Condition A, t = 1000 hours, TJ = +175°C, VR = 80 percent of VRWM (pk)
(see 1.3), JAN, JANTX and JANTXV only.
* For BT devices Io= 2.8A minimum unheatsunk.
4.4.4 Gro up E inspe ctio n. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup test ing in table E-IX of MIL-PRF-19500 and as specified in table II herein. Electrical measurements (end-
points) shall be in accord anc e with table I, subgroup 2 and the applicable step of table III herein.
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pul se mea sure ment s. Condit ion s for pulse mea sure ment sha ll be as spe cified in section 4 of MIL-STD-750.
* 4.5.2 DC inter mit tent oper atio n life. A cycle shall consist of an "on" period, when forward current is applied
suddenly, not gradually, to the device for the time necessary to achieve an increase (delta) case temperature of
+85°C minimum followed by an "off" period, when the current is suddenly removed for cooling, the case through a
similar delta temperature. Auxiliary (forced) cooling is permitted during the "off" period only. Forward current and
"on" time, within specific limits, and "off" time may be adjusted to achieve the delta case temperature. Heat sinks
shall only be used if and to the degree necessary to maintain test samples within the desired delta temperature
tolerance. The heating time shall be such that 30 s < theating < 180 s. The forward current may be steady-state dc,
full-wave rectified dc, or the equivalent half-sine wave dc, of the specified value. The test duration shall be the
specified number of cycles. Within the time interval of 50 cycles before and 500 cycles after the termination of the
test, the sample units sha ll be remov ed fr om the specified test cond itions and allowed t o reach room ambien t
conditions. Specified end-point measurements for qualification and quality conformance inspections shall be
completed within 96 hours after removal of sample units from the specified test conditions. Additional readings may
be taken at the discretion of the manufacturer.
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*
*
*
*
*
*
*
*
*
* TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 1
Visual and mechanical
inspection
2071
Subgroup 2
Thermal impedance 2/
3101 or
4081
See 4.3.2
ZθJX
°C/W
Forward voltage
4011
Condition B, Duty cycle ≤ 2
percent (puls ed see 4.5.1);
tp ≤ 8.3 ms
IF = 10 A
VF1
.860
V
I
F
= 20 A
V
F2
.950
V
Reverse current
4016
DC method; V
R
= rated V
R
(see 1.3)
I
R1
10
µA
Breakdown voltage
4021
IR = 100 µA
V(BR)1
1N5812, BT, R
1N5814, BT, R
1N5816, BT, R
60
110
160
V
V
V
Subgroup 3
High temperature operation
TC = +100°C
Reverse current
4016
DC method, V
R
= rated V
R;
(see 1.3)
I
R2
1.00
mA
Forward voltage
4011
Condition B, I
FM
= 10 A, duty
cycle < 2 percent (pulsed); tp <
8.3 ms
V
F3
.780
V
Low temperatur e opera tio n
T
A
= -65°C
Forward voltage
4011
Condition B, I
FM
= 10 A, duty
cycle < 2 percent (pulsed); tp <
8.3 ms
V
F4
1.05
V
Breakdown voltage
4021
I
R
= 100 µA
V(BR)2
1N5812, BT, R
1N5814, BT, R
1N5816, BT, R
50
100
150
V
V
V
See footnote at end of table.
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* TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 4
Reverse recovery time
4031
Test condition B4
IF = IR = 1 A (pk)
I(REC) = 0.1 A; di/dt = 85 A/µs
minimum
t
rr
35
ns
Junction capacitance
4001
V
R
= 10 V, f = 1 MHz
VSIG = 50 mV (p-p) maximum
C
J
300
pF
Forward recovery voltage
4026
t
P
> 20 ns, t
r
= 8 ns;
IF = 1,000 mA
V
FRM
2.2
V (pk)
Forward recovery time
4026
I
F
= 1,000 mA
tfr
15
ns
Subgroups 5, 6, and 7
Not applicable
1/ For sampling pla n, see MIL-PRF-19500.
2/ This test required f or the following end-point measurements only:
Group B, subgroups 3, 4, and 5 (JANS).
Group B, subgroups 2 and 3 (JAN, JANTX, and JANTXV).
Group C, subgroup 2 and 6.
Group E, subgroup 1.
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TABLE II. Group E inspection (all quality levels) for qualification and requalification only.
Inspection
MIL-STD-750
Sampling
plan
Method
Conditions
Subgroup 1
45 devices
c = 0
Ther mal sh o ck ( glass
strain)
1056
0°C to +100°C, 1 00 cycle s.
Electrical measurements
See table I, subgroup 2
Subgroup 2
45 devices
c = 0
Steady-state dc blocking
life
1038
Test condition A, except in accordance with 4.3.3; 1, 00 0
hours. For irrad iat ed dev ice s, incl ude trr as an end-point
measurement.
Electrical measurements
See table I, subgroup 2.
Subgroup 3
Not applicable
Subgroup 4
Thermal impedance
curves
3101 or
4081
See MIL-PRF-19500.
Subgroup 5
Not applicable
MIL-PRF-19500/478L
w/AMENDMENT 1
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* TABLE III. Groups B, C, and E delta measurements. 1/ 2/ 3/ 4/ 5/
Step
Inspection
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
1.
Forward voltage
4011
Condition B, duty cycle ≤ 2
percent (puls ed see 4.5.1); tp
≤ 8.3 ms. IF = 10 A
∆V
F1
±50 mV dc
change from
initial value
V
2.
Reverse current
4016
DC method; VR = rated VR
(see 1.3)
∆I
R1
±100 percent of
initial value or
±250 nA dc
change from
initial value,
whichever is
greater.
µA
1/ Devices which exceed the table I, subgroup 2 (group A) limits for this test shall not be accepted.
2/ The delta measurements for group B inspections in table E-VIA (JANS) of MIL-PRF-19500 are as follows:
a. Subgroup 3, see table III herein, steps 1 and 2.
b. Subgroup 4, see table III herein, step 2.
c. Subgroup 5, see table III herein, steps 1 and 2.
3/ The delta measurements for group B inspections in table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500
are as follows:
a. Subgroup 3, see table III herein, steps 1 and 2.
b. Subgroup 6, see table III her ein, step 1.
4/ The delta measurements for group C inspections in table E-VII of MIL-PRF-19500 are as follows:
a. Subgroup 2, see table III herein, step 1 (JANS).
b. Subgroup 6, see table III herein, steps 1 and 2 (JANS), step 1 (JAN, JANTX, and JANTXV).
5/ The delta measurements for group E inspections in table E-IX of MIL-PRF-19500 are: Subgroups 1 and 2, see
table III herei n, step s 1 and 2.
MIL-PRF-19500/478L
w/AMENDMENT 1
18
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order
(see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these personnel
need to contact the responsible packaging activity to ascertain packaging requirements. Packaging requirements are
maintained by the Inventory Control Point's packaging activities within the Military Service or Defense Agency, or
within the Military Service’s system commands. Packaging data retrieval is available from the managing Military
Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible
packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.
The notes specified in MIL-PRF-19500 are applicable to this specification.)
6.1 Inten ded use. Semiconductors conforming to this specification are intended for original equipment design
applications and logistic support of existing equipment.
6.2 Acqui sit ion requ ir e ment s. Acquisition documents should specify the following:
a. Title, number, and date of this specification.
b. Packaging requirements (see 5.1).
c. Lead finish (see 3.4.1).
d. Product assurance level and type designator.
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are,
at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML 19500) whether or not
such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the
products covered by this specification. Information pertaining to qualification of products may be obtained from DLA
Land and Maritime, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43218-3990 or e-mail vqe.chief@dla.mil. An
online listing of products qualified to this specification may be found in the Qualified Products Database (QPD) at
https://assist.dla.mil.
MIL-PRF-19500/478L
w/AMENDMENT 1
19
6.4 PIN constr u ctio n ex ample .
6.4.1 Encapsulated devices The PINs for encapsulated devices are constructed using the following form.
JANTXV 1N 5812 R
JAN certification mark and quality level (see 1.5.1)
First number and first letter symbols (see 1.5.3.1)
Second number symbols (see 1.5.3.2)
For suffix letter (see 1.5.4)
6.4.2 Unencapsulated devices. The PINs for un-encapsulated devices are constructed using the following form.
JANHC A 1N 5812
JAN certification mark and quality level (see 1.5.2)
Die identifier for unencapsulated devices (see 1.5.6)
First number and first letter symbols (see 1.5.3.1)
Second number symbols (see 1.5.3.2)
6.5 List of PINs. The following is a list of possible PINs available on this specification sheet.
6.5.1 PINs for encapsulated devices. The following is a list of possible PINs for encapsulated devices available on
this specific atio n sheet .
PINs for types1N5812, 1N5814, and 1N5816
JAN1N5812 JANTX1N5812 JANTXV1N5812 JANS1N5812
JAN1N5814 JANTX1N5814 JANTXV1N5814 JANS1N5814
JAN1N5816 JANTX1N5816 JANTXV1N5816 JANS1N5816
JAN1N5812R JANTX1N5812R JANTXV1N5812R JANS1N5812R
JAN1N5814R JANTX1N5814R JANTXV1N5814R JANS1N5814R
JAN1N5816R JANTX1N5816R JANTXV1N5816R JANS1N5816R
JAN1N5812BT JANTX1N5812BT JANTXV1N5812BT JANS1N5812BT
JAN1N5814BT JANTX1N5814BT JANTXV1N5814BT JANS1N5814BT
JAN1N5816BT JANTX1N5816BT JANTXV1N5816BT JANS1N5816BT
* Note. All part numbers include the BT packages.
MIL-PRF-19500/478L
w/AMENDMENT 1
20
* 6.5.2 PINs for unencapsulated devices (die). The following is a list of possible PINs and qualified suppli ers for
unencapsulated devices available on this specification sheet. The qualified JANHC and JANKC suppliers with the
applicable letter version (example, JANHCA1N5812) will be identified on the QPL.
JANHC and JANKC ordering information (1)
PIN
Manufacturer
59377
11961
33178
12969
12969
12969
1N5812
JANHCA1N5812
JANHCB1N5812
JANHCC1N5812
JANHCD1N5812
JANHCE1N5812
JANHCF1N5812
1N5814
JANHCA1N5814
JANHCB1N5814
JANHCC1N5814
JANHCD1N5814
JANHCE1N5814
JANHCF1N5814
1N5816
JANHCA1N5816
JANHCB1N5816
JANHCC1N5816
JANHCD1N5816
JANHCE1N5816
JANHCF1N5816
Figure
number
3
4
5
6
6
6
JANHC and JANKC ordering information (1)
PIN
Manufacturer
13409
1N5812
JANHCG1N5812
1N5814
JANHCG1N5814
1N5816
JANHCG1N5816
Figure
number
7
(1) For JANKC product assurance level, replace the "JANHC" prefix with "JANKC"."
* 6.6 Amendment notations. The margins of this specification are marked with asterisks to indicate modifications
generated by this amendment. This was done as a convenience only and the Government assumes no liability
whatsoever for any inaccuracies in these notations. Bidders and contr act or s are caut ion ed to evaluat e the
requirements of this document based on the entire content irrespective of the marginal notations and relationship to
the last previous issue.
Custodians: Preparing activity:
Army - CR DLA - CC
Navy - EC
Air Force - 85 (Project 5961-2017-073)
DLA - CC
Review activities:
Army - AR, MI, SM
Navy - AS, MC
Air Force - 19, 99
NASA - NA
NOTE: The activities listed above were interested in this document as of the date of this document. Since
organizations and responsibilities can change, you should verify the currency of the information above using the
ASSIST Online database at https://assist.dla.mil.