DISCRETE SEMICONDUCTORS DATA SHEET M3D324 BLS2731-10 Microwave power transistor Product specification Supersedes data of 1998 Mar 06 1998 Nov 25 Philips Semiconductors Product specification Microwave power transistor BLS2731-10 PINNING - SOT445C FEATURES * Suitable for short and medium pulse applications PIN * Internal input and output matching networks for an easy circuit design * Emitter ballasting resistors improve ruggedness * Gold metallization ensures excellent reliability DESCRIPTION 1 collector 2 emitter 3 base; connected to flange * Interdigitated emitter-base structure provides high emitter efficiency * Multicell geometry improves power sharing and reduces thermal resistance. 1 handbook, halfpage APPLICATIONS * Common base class-C pulsed power amplifier for radar applications in the 2.7 to 3.1 GHz band. 3 2 Top view MBK132 DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT445C) with the common base connected to the flange. Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Th = 25 C in a common base class-C test circuit. MODE OF OPERATION Pulsed class-C f (GHz) VCB (V) PL (W) Gp (dB) C (%) 2.7 to 3.1 40 12.5 typ. 10 typ. 45 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1998 Nov 25 2 Philips Semiconductors Product specification Microwave power transistor BLS2731-10 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 75 V VCES collector-emitter voltage RBE = 0 - 75 V VEBO emitter-base voltage open collector - 2 V ICM peak collector current tp 100 s; 10% - 1.5 A Ptot total power dissipation tp = 100 s; = 10%; Tmb = 25 C - 145 W Tstg storage temperature -65 +200 C Tj operating junction temperature - 200 C Tsld soldering temperature - 235 C up to 0.2 mm from ceramic cap; t 10 s THERMAL CHARACTERISTICS SYMBOL Zth j-h PARAMETER CONDITIONS VALUE tp = 100 s; = 10%; note 1 thermal impedance from junction to heatsink 1.2 UNIT K/W Note 1. Equivalent thermal impedance under pulsed microwave operating conditions. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage 75 - - V V(BR)CES collector-emitter breakdown voltage IC = 2.5 mA; VBE = 0 75 - - V ICBO collector leakage current VCB = 40 V; IE = 0 - - 0.3 mA ICES collector leakage current VCE = 40 V; VBE = 0 - - 0.5 mA IEBO emitter leakage current VEB = 1.5 V; IC = 0 - - 0.1 mA hFE DC current gain VCE = 5 V; IC = 0.25 A 40 - - Cc collector capacitance (die only) VCE = 1 V; IE = ie = 0; f = 1 MHz - 10 - 1998 Nov 25 IC = 2.5 mA; open emitter 3 pF Philips Semiconductors Product specification Microwave power transistor BLS2731-10 APPLICATION INFORMATION RF performance at Th = 25 C in a common-base test circuit. f (GHz) VCE (V) PL (W) Gp (dB) C (%) 2.7 to 3.1 40 10 typ. 12.5 9 typ. 10 35 typ. 45 MODE OF OPERATION Class-C; tp = 100 s; = 10% MDA227 16 MDA228 60 handbook, halfpage handbook, halfpage Gp (dB) (1) 12 (2) C (%) (1) (2) (3) 40 (3) 8 20 4 0 0 0 4 8 PL (W) 12 0 4 VCB = 40 V; class-C; tp = 100 s; = 10%. (1) f = 2.7 GHz. (2) f = 2.9 GHz. (3) f = 3.1 GHz. VCB = 40 V; class-C; tp = 100 s; = 10%. (1) f = 2.7 GHz. (2) f = 3.1 GHz. (3) f = 2.9 GHz. Fig.2 Fig.3 Power gain as a function of load power; typical values. 1998 Nov 25 4 8 PL (W) 12 Collector efficiency as a function of load power; typical values. Philips Semiconductors Product specification Microwave power transistor BLS2731-10 MDA229 16 handbook, halfpage 80 C (%) Gp (dB) 12 MDA230 12 handbook, halfpage (1) (3) (2) PL (W) 60 Gp 8 C 8 40 4 20 4 0 2.7 2.8 2.9 0 0 3.1 3 0.4 0 0.8 f (GHz) VCB = 40 V; class-C; tp = 100 s; = 10%. VCB = 40 V; class-C; tp = 100 s; = 10%. (1) f = 2.7 GHz. (2) f = 2.9 GHz. (3) f = 3.1 GHz. Fig.4 Fig.5 Power gain and efficiency as functions of frequency; typical values. MDA231 20 handbook, halfpage Zi () PD (W) 1.2 Load power as a function of drive power; typical values. MDA232 20 handbook, halfpage xi ZL () 16 16 ri 12 12 8 8 4 4 0 2.6 2.8 3 f (GHz) 0 2.6 3.2 RL XL 2.8 VCB = 40 V; class-C; PL = 10 W. VCB = 40 V; class-C; PL = 10 W. Fig.6 Fig.7 Input impedance as function of frequency (series components); typical values. 1998 Nov 25 5 3 f (GHz) 3.2 Load impedance as function of frequency (series components); typical values. Philips Semiconductors Product specification Microwave power transistor BLS2731-10 30 handbook, full pagewidth 30 40 C2 C3 input 50 C4 C1 output 50 C5 MGR729 Dimensions in mm. The components are located on one side of the copper-clad printed circuit board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. The striplines are on double-clad printed-circuit board with Duroid dielectric (r = 2.2); thickness = 0.38 mm. Fig.8 1998 Nov 25 Component layout for 2.7 to 3.1 GHz class-C test circuit. 6 Philips Semiconductors Product specification Microwave power transistor BLS2731-10 List of components COMPONENT DESCRIPTION VALUE C1 multilayer ceramic chip capacitor; note 1 0.7 nF C2 multilayer ceramic chip capacitor; note 2 1 nF C3 multilayer ceramic chip capacitor; note 1 10 pF C4 multilayer ceramic chip capacitor; note 3 150 pF C5 Tekelec trimmer type 37281SL 0.4 to 2.5 pF Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. American Technical Ceramics type 200A or capacitor of same quality. 3. American Technical Ceramics type 700A or capacitor of same quality. 1998 Nov 25 7 Philips Semiconductors Product specification Microwave power transistor BLS2731-10 PACKAGE OUTLINE Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT445C D A F 3 D1 D2 U1 B q c C 1 H U2 E2 E1 w1 M A B p A E 2 w2 M C b 0 Q 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b c D D1 D2 E E1 E2 F H p Q q U1 U2 w1 w2 mm 5.57 4.70 3.15 2.95 0.15 0.09 8.13 7.87 7.65 7.35 8.15 7.85 4.20 3.93 4.25 3.95 5.31 5.01 1.82 1.22 15.84 14.64 3.35 3.05 3.33 3.03 14.22 20.47 20.17 5.18 4.98 0.51 1.02 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ SOT445C 1998 Nov 25 EUROPEAN PROJECTION ISSUE DATE 97-05-23 8 Philips Semiconductors Product specification Microwave power transistor BLS2731-10 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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