SMAJ530E3/61 - VISHAY

SMAJ530, SMAJ550

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Revision: 10-Dec-13 1Document Number: 88391

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Surface Mount TRANSZORB® Transient Voltage Suppressors

APPLICATION NOTES

• Respect thermal resistance (PCB Layout) - as the

temperature coefficient also contributes to the clamping

voltage

• Select minimum breakdown voltage, so you get

acceptable power dissipation and PCB tie point

temperature

• Devices with higher breakdown voltage will have a shorter

conduction time and will dissipate less power

• Clamping voltage is influenced by internal resistance -

design approximation is 7 V per 100 mA slope

• Keep temperature of TVS lower than TOPSwitch® as a

recommendation

• Maximum current is determined by the maximum TJ and

can be higher than 300 mA

• Contact supplier for different clamping voltage/

current arrangements

• Minimum breakdown voltage can be customized for other

applications. Contact supplier

• TOPSwitch is a registered trademark of Power

Integrations, Inc.

FEATURES

• Glass passivated chip junction

• Available in uni-directional polarity only

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

• AEC-Q101 qualified

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting

on ICs, MOSFET, signal lines of sensor units for consumer,

computer, industrial, automotive, and telecommunication.

MECHANICAL DATA

Case: DO-214AC (SMA)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant and commercial grade

Base P/NHE3 - RoHS-compliant and AEC-Q101 qualified

Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified

(“_X” denotes revision code e.g. A, B, .....)

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: Color band denotes cathode end

PRIMARY CHARACTERISTICS

VBR (uni-directional) 530 V to 550 V

VWM 477 V, 495 V

PPPM 300 W

PD2.5 W

IFSM (uni-directional only) 40 A

TJ max. 150 °C

Polarity Uni-directional

Package DO-214AC (SMA)

DO-214AC (SMA)

SMAJ530, SMAJ550

www.vishay.com Vishay General Semiconductor

Revision: 10-Dec-13 2Document Number: 88391

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

(1) Non-repetitive current pulse, per fig. 3 and derated above 25 °C per fig. 2.

(2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal

(3) Lead temperature at TL = 75 °C

(4) Peak pulse power waveform is 10/1000 μs

Note

(1) Measured at 1 MHz

Note

(1) Mounted on minimum recommended pad layout

Note

(1) AEC-Q101 qualified

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL SMAJ530 SMAJ550 UNIT

Device marking code HD SB

Peak pulse power dissipation (1)(2)(4) (fig. 1) PPPM 300 W

Power dissipation on infinite heatsink (3) P

D2.5 W

Operating junction and storage temperature range TJ, TSTG - 55 to 150 °C

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

DEVICE TYPE

BREAKDOWN VOLTAGE

VBR AT IT

(V)

TEST CURRENT

(μA)

STAND-OFF VOLTAGE

VWM

(V)

MIN.

SMAJ530 530 100 477

SMAJ550 550 100 495

ADDITIONAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL SMAJ530 SMAJ550 UNIT

Max. clamping voltage 400 mA, 10/1000 μs waveform VC760 V

Maximum DC reverse leakage current VWM ID1.0 μA

Typical temperature coefficient of VBR 650 mV/°C

Typical capacitance (1) 0 V CJ

90 pF

200 V 7.5

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL SMAJ530 SMAJ550 UNIT

Typical thermal resistance, junction to lead RJL 30 °C/ W

Typical thermal resistance, junction to ambient (1) RJA 120

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE

SMAJ530-E3/61 0.064 61 1800 7" diameter plastic tape and reel

SMAJ530-E3/5A 0.064 5A 7500 13" diameter plastic tape and reel

SMAJ530HE3/61 (1) 0.064 61 1800 7" diameter plastic tape and reel

SMAJ530HE3/5A (1) 0.064 5A 7500 13" diameter plastic tape and reel

SMAJ530HE3_A/H (1) 0.064 H 1800 7" diameter plastic tape and reel

SMAJ530HE3_A/I (1) 0.064 I 7500 13" diameter plastic tape and reel

SMAJ530, SMAJ550

www.vishay.com Vishay General Semiconductor

Revision: 10-Dec-13 3Document Number: 88391

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

Fig. 1 - Peak Pulse Power Rating Curve

Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature

Fig. 3 - Pulse Waveform

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

0.1

100

PPM

- Peak Pulse Power (kW)

td - Pulse Width (s)

Non-Repetitive Pulse

Waveform shown in Fig. 3

TA = 25 °C

0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms

0 255075100

100

125 150 175 200

TJ - Initial Temperature (°C)

Peak Pulse Power (P

) or Current (I

)

Derating in Percentage, %

100

150

= 10 µs

Peak Value

IPPM

Half Value -

IPPM

10/1000 µs Waveform

as defined by R.E.A.

01.0 2.0 3.0 4.0

t - Time (ms)

PPM

- Peak Pulse Current, % I

RSM

= 25 °C

Pulse Width (t

)

is defined as the Point

where the Peak Current

decays to 50 % of I

PPM

0.008 (0.203)

0.194 (4.93)

0.208 (5.28)

0.157 (3.99)

0.177 (4.50)

0.100 (2.54)

0.110 (2.79)

0.078 (1.98)

0.090 (2.29)

0.006 (0.152)

0.012 (0.305)

0.049 (1.25)

0.065 (1.65)

Cathode Band

0 (0)

DO-214AC (SMA)

Mounting Pad Layout

0.074 (1.88)

MAX.

0.208 (5.28)

REF.

0.066 (1.68)

MIN.

0.060 (1.52)

MIN.

0.030 (0.76)

0.060 (1.52)

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Revision: 02-Oct-12 1Document Number: 91000

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