T4-LDS-0276-3, Rev. 1 (121564) ©2012 Microsemi Corporation Page 1 of 7
2N3501UB
compliant NPN SILIC ON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/366
Qualified Levels:
JAN, JANT X, JAN TXV
AND JANS
DESCRIPTION
Thi s 2 N 3501 ep i taxial planar t r ans istor is military qualified up to a JANS l evel for high-
reliability applications. This device is als o available in thru h ole TO-5 and TO-39 packaging as
well as a low profile U 4 surfac e mount. Mi crosemi al so offers n umerous oth er trans i stor
products to meet higher and lower po wer rat ings with vari ous switching speed requirement s in
bo th thr oug h-hol e and s urfac e-mount packages.
UB Package
Also available in:
TO-5 package
(long-leaded)
2N3498L – 2N3501L
TO-39 ( TO-205AD)
package
(leaded)
2N3498 – 2N3501
U4 package
(surface mount)
2N3498U4 – 2N3501U4
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• Sur face mount equiv alent of JEDE C registered 2N3501 number.
• JAN, JANTX, JANTXV and JANS qualifications are avail able per MIL-PRF-19500/366.
(See part nomenclature for all available options.)
• RoHS com pliant by des ign.
APPL ICAT IONS / BENEFITS
• General purpose transistors for medium power applications requiring high frequency switching.
• Low profile ceramic package.
• Lightweight.
• Military and other high-reliability appli cations.
MAXIMUM RATIN GS @ TC = +25 ºC unles s other wise not ed
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters / Test Conditions Symbol Value Unit
Junction & Storage Temperature Range TJ, Tstg -65 to +200 °C
Thermal Resistance Junction-to-Ambient R
ӨJA
325
o
C/W
Thermal Resistance Junction-to-Solder Pad RӨJSP 90
o
C/W
Collector-Emitter Voltage VCEO 150 V
Collector-Base Voltage VCBO 150 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current IC 300 mA
Total P ower Dissipation
@ T A = +25 °C (1)
@ T SP = +25 °C (2) PT 0.5
1.5 W
Notes: 1. See figure 1.
2. See figure 2.
T4-LDS-0276-3, Rev. 1 (121564) ©2012 Microsemi Corporation Page 2 of 7
2N3501UB
M ECHANI CAL and PACKAGING
• CASE: Ceramic.
• TERMINALS: Gold plating over nickel under plate.
• MARKING: Part number, date code, manufa cturer ’s I D.
• TAPE & REEL opti on: Standard per EIA-418D. Cons ult factory for quantities.
• WEIGHT: < 0.04 Grams.
• See Package Dimensions on last page.
PART NOMENCLATURE
JAN 2N3501 UB
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
SYMBOLS & DEFI NITIONS
Symbol
Definition
Cobo
Common-base open -c i r cu i t output capacitance
ICEO
Collector c utoff current, base open
ICEX
Collector c utoff current, circ uit b etween base and emitter
IEBO
Emitt er cutoff current, collector open
hFE
Common-emitter static forward cu r r ent trans fer r atio
VCEO
Collector-emitter volt age, base op en
VCBO
Collector-emitter volt age, em itter open
VEBO
Emitter-base vo l tage, collec tor op en
T4-LDS-0276-3, Rev. 1 (121564) ©2012 Microsemi Corporation Page 3 of 7
2N3501UB
ELECTRICAL CHARACTE RISTICS @ TA = +2 5 °C, unles s otherwis e not ed
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emit ter Breakdown Voltage
IC = 10 mA, puls ed
V(BR)CEO
150
V
Collector-Base Cutoff Current
VCB = 75 V
VCB = 1 50 V
ICBO
50
10
nA
µA
Emitter-Base C utoff Cur r ent
VEB = 4. 0 V
VEB = 6. 0 V
IEBO
25
10
nA
µA
ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio
IC = 0. 1 mA , VCE = 10 V
IC = 1. 0 mA , VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 15 0 mA, VCE = 10 V
IC = 30 0 mA, VCE = 10 V
hFE
35
50
75
100
20
300
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 15 0 mA, IB = 15 mA
VCE(sat)
0.2
0.4
V
Base-Emi tt er Satu r ation V oltage
IC = 10 mA, IB = 1.0 mA
IC = 15 0 mA, IB = 15 mA
VBE(sat)
0.8
1.2
V
DYNAMIC CHARACTERIST ICS
Forward Cur r ent Transfer Ratio, Magni tude
IC = 20 mA, VCE = 20 V, f = 10 0 MH z |hfe| 1.5 8.0
O utput Capac itance
VCB = 10 V, IE = 0,
100 kHz < f < 1.0 MHz
Cobo
8.0
pF
I nput Cap acitance
VEB = 0. 5 V, IC = 0, 100 kH z < f < 1.0 MHz
Cibo
80
pF
(1) Pulse Test: pulse width = 300 µs, duty cycle < 2.0%.
T4-LDS-0276-3, Rev. 1 (121564) ©2012 Microsemi Corporation Page 4 of 7
2N3501UB
ELECTRICAL CHARACTE RISTICS @ TA = +2 5 °C, unles s otherwis e not ed (continued)
SWIT CHING CHARACTE RISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Turn-On Ti me
VEB = 5 V; IC = 150 mA; IB1 = 15 mA ton
115
ns
Turn-Off Time
IC = 15 0 mA; IB1 = IB2 = 15 mA toff
1150
ns
SAFE OPERATING AREA (See SOA figure and reference MIL-STD-75 0 met h od 305 3)
DC Te sts
TC = +25 oC, tr > 10 ns; 1 Cycle, t = 1.0 s
Test 1
VCE = 10 V, IC = 113 mA
Test 2
VCE = 50 V, IC = 23 mA
Test 3
VCE = 80 V, IC = 14 mA
Clamped Switching
TA = +2 5 oC
Test 1
IB = 50 mA, IC = 3 00 mA
Collector to E mi tter Voltage VCE (Volts)
Maximum Safe Operating Area
Col l ec t or Cur r e nt I
C
(Milliamperes)
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2N3501UB
GRAPHS
Tc (°C) (Case)
FIGURE 1
Derating for all devices (RθJSP) H
Tc (°C) (Case)
FIGURE 2
Derating for all devices (RθJA)
DC Operation Maximum Rating (W)
DC Operation Maximum Rating (W)
T4-LDS-0276-3, Rev. 1 (121564) ©2012 Microsemi Corporation Page 6 of 7
2N3501UB
GRAPHS
Ti me (s)
FIGURE 3
Thermal im pedan ce g r aph (RθJSP)
Theta (oC/W)
T4-LDS-0276-3, Rev. 1 (121564) ©2012 Microsemi Corporation Page 7 of 7
2N3501UB
PACKAGE DIM ENSIONS
Symbol
Dimensions
Note
Symbol
Dimensions
Note
Inch
Millimeters
Inch
Millimeters
Min
Max
Min
Max
Min
Max
Min
Max
BH
.046
.056
1.17
1.42
LS1
.036
.040
0.91
1.02
BL
.115
.128
2.92
3.25
LS2
.071
.079
1.80
2.01
BW
.085
.108
2.16
2.74
LW
.016
.024
0.41
0.61
CL
-
.128
-
3.25
r
-
.008
-
0.203
CW
-
.108
-
2.74
r1
-
.012
-
0.305
LL1
.022
.038
0.56
0.97
r2
-
.022
-
0.559
LL2
.017
.035
0.43
0.89
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Hatched areas on package denote metallized areas.
4. Lid mater ial: Kovar
5. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.
6. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
Lid