BF998R E6327 - Infineon Technologies - Pdf.Support

2007-04-20

1

BF998...

Silicon N_Channel MOSFET Tetrode

• Short-channel transistor

with high S / C quality factor

• For low-noise, gain-controlled

input stage up to 1 GHz

• Pb-free (RoHS compliant) package1)

• Qualified according AEC Q101

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type Package Pin Configuration Marking

BF998

BF998R SOT143

SOT143R 1=S

1=D 2=D

2=S 3=G2

3=G1 4=G1

4=G2 -

--

-MOs

MRs

Maximum Ratings

Parameter Symbol Value Unit

Drain-source voltage VDS 12 V

Continuous drain current ID30 mA

Gate 1/ gate 2-source current ±IG1/2SM 10

Total power dissipation

TS ≤ 76 °C, BF998, BF998R Ptot 200

Storage temperature Tstg -55 ... 150 °C

Channel temperature Tch 150

Thermal Resistance

Parameter Symbol Value Unit

Channel - soldering point2), BF998, BF998R Rthchs ≤ 370 K/W

1Pb-containing package may be available upon special request

2For calculation of RthJA please refer to Application Note Thermal Resistance

2007-04-20

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BF998...

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Drain-source breakdown voltage

ID = 10 µA, VG1S = -4 V, VG2S = -4 V V(BR)DS 12 - - V

Gate 1 source breakdown voltage

±IG2S = 10 mA, VG2S = VDS = 0 ±V(BR)G1SS 8 - 12

Gate2 source breakdown voltage

±IG2S = 10 mA, VG2S = VDS = 0 ±V(BR)G2SS 8 - 12

Gate 1 source leakage current

±VG1S = 5 V, VG2S = VDS = 0 ±IG1SS - - 50 nA

Gate 2 source leakage current

±VG2S = 5 V, VG2S = VDS = 0 ±IG2SS - - 50 nA

Drain current

VDS = 8 V, VG1S = 0 , VG2S = 4 V IDSS 5 9 15 mA

Gate 1 source pinch-off voltage

VDS = 8 V, VG2S = 4 V, ID = 20 µA -VG1S(p) - 0.8 2.5 V

Gate 2 source pinch-off voltage

VDS = 8 V, VG1S = 0 , ID = 20 µA -VG2S(p) - 0.8 2

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BF998...

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

AC Characteristics (verified by random sampling)

Forward transconductance

VDS = 8 V, ID = 10 mA, VG2S = 4 V gfs 20 24 - -

Gate1 input capacitance

VDS = 8 V, ID = 10 mA, VG2S = 4 V,

f = 10 MHz

Cg1ss - 2.1 2.5 pF

Gate 2 input capacitance

VDS = 8 V, ID = 10 mA, VG2S = 4 V,

f = 10 MHz

Cg2ss - 1.2 - pF

Feedback capacitance

VDS = 8 V, ID = 10 mA, VG2S = 4 V,

f = 10 MHz

Cdg1 - 25 - fF

Output capacitance

VDS = 8 V, ID = 10 mA, VG2S = 4 V,

f = 10 MHz

Cdss - 1.1 - pF

Power gain

VDS = 8 V, ID = 10 mA, VG2S = 4 V,

f = 45 MHz

VDS = 8 V, ID = 10 mA, VG2S = 4 V,

f = 800 MHz

Gp

-

-

28

20

-

-

dB

Noise figure

VDS = 8 V, ID = 10 mA, VG2S = 4 V,

f = 45 MHz

VDS = 8 V, ID = 10 mA, VG2S = 4 V,

f = 800 MHz

F

-

-

2.8

1.8

-

-

dB

Gain control range

VDS = 8 V, VG2S = 4 ...-2 V, f = 800 MHz ∆Gp40 50 -

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BF998...

Total power dissipation Ptot = ƒ(TS)

BF998, BF998R

0 15 30 45 60 75 90 105 120 °C 150

TS

0

20

40

60

80

100

120

140

160

180

mW

220

Ptot

Output characteristics ID = ƒ(VDS)

VG2S = 4 V

VG1S = Parameter

0 2 4 6 8 10 V14

VDS

0

2

4

6

8

10

12

14

16

18

20

22

mA

26

ID

0.4V

0.2V

0V

-0.2V

-0.4V

Gate 1 forward transconductance

gfs = ƒ(ID)

VDS = 5V, VG2S = Parameter

0 4 8 12 16 mA 24

ID

0

2

4

6

8

10

12

14

16

18

20

22

mS

26

gfs

4V

2V

1V

0V

Gate 1 forward transconductance

gfs1 = ƒ (VG1S)

-1 -0.75 -0.5 -0.25 0 0.25 V0.75

VG1S

0

2

4

6

8

10

12

14

16

18

20

22

mS

26

Gfs

4V

2V

1V

0V

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BF998...

Drain current ID = ƒ(VG1S)

VDS = 5V

VG2S = Parameter

-1 -0.75 -0.5 -0.25 0 0.25 0.5 V1

VG1S

0

5

10

15

20

mA

30

ID

4V 2V

1V

0V

Power gain Gps = ƒ (VG2S)

f = 45 MHz

0 1 2 V4

VG2S

0

5

10

15

20

dB

30

Gps

Noise figure F = ƒ (VG2S)

f = 45 MHz

0 1 2 V4

VG2S

0

1

2

3

4

5

6

7

8

dB

10

F

Noise figure F = ƒ (VG2S)

f = 800 MHz

0 1 2 V4

VG2S

0

1

2

3

dB

5

F

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BF998...

Power gain Gps = ƒ (VG2S)

f = 800 MHz

0 1 2 V4

VG2S

-10

-5

0

5

10

dB

20

Gps

Gate 1 input capacitance Cg1ss = ƒ (VG1S)

-3 -2.6 -2.2 -1.8 -1.4 -1 -0.6 V0.2

VG1S

1

1.2

1.4

1.6

1.8

2

2.2

pF

2.6

Cg1ss

Output capacitance Cdss = ƒ(VDS)

02468V12

VDS

0

0.5

1

1.5

2

2.5

3

pF

4

Cdss

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BF998...

Package SOT143

Package Outline

Foot Print

Marking Layout (Example)

Standard Packing

Reel ø180 mm = 3.000 Pieces/Reel

Reel ø330 mm = 10.000 Pieces/Reel

RFs

2005, June

Date code (YM)

BFP181

Type code

56

Pin 1

0.8 0.81.2

0.9 1.1 0.9

1.2

0.8 0.8

0.8-0.05

+0.1

1.9

1.7

±0.1

2.9

+0.1

-0.05

0.4

0.1 MAX.

12

34

0.25 MB

±0.1

1

10˚ MAX.

0.15 MIN.

0.2 A

M

2.4

±0.15

0.2

10˚ MAX.

A

1.3

±0.1

0...8˚

0.08...0.15

2.6

4

3.15

Pin 1

8

0.2

1.15

B

Manufacturer

2007-04-20

8

BF998...

Package SOT143R

1.1

0.8 0.81.2

0.90.9

0.8 0.8 1.2

Package Outline

Foot Print

Marking Layout (Example)

Standard Packing

Reel ø180 mm = 3.000 Pieces/Reel

Reel ø330 mm = 10.000 Pieces/Reel

2.6

4

3.15

Pin 1

8

0.2

1.15

Reverse bar

2005, June

Date code (YM)

BFP181R

Type code

Pin 1

1.9

1.7

0.4

-0.05

+0.1

+0.1

-0.05

0.8

B

0.25

M

B

2.9

±0.1

0.2

12

43

A

0˚... 8˚

10˚

10˚

0.1 MAX.

0.15 MIN.

1.3±0.1

2.4±0.15

1±0.1

0.08...0.15

A

M

0.2

MAX.

MAX.

Manufacturer

2007-04-20

9

BF998...

Edition 2006-02-01

Published by

Infineon Technologies AG

81726 München, Germany

© Infineon Technologies AG 2007.

All Rights Reserved.

Attention please!

The information given in this dokument shall in no event be regarded as a guarantee

of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any

examples or hints given herein, any typical values stated herein and/or any information

regarding the application of the device, Infineon Technologies hereby disclaims any

and all warranties and liabilities of any kind, including without limitation warranties of

non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices

please contact your nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements components may contain dangerous substances.

For information on the types in question please contact your nearest

Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or

systems with the express written approval of Infineon Technologies, if a failure of

such components can reasonably be expected to cause the failure of that

life-support device or system, or to affect the safety or effectiveness of that

device or system.

Life support devices or systems are intended to be implanted in the human body,

or to support and/or maintain and sustain and/or protect human life. If they fail,

it is reasonable to assume that the health of the user or other persons

may be endangered.