Number: DB-050
Jan 2010 / F
Page 1
S E M IC O N D U C TO R
300 mW DO-34 Hermetically
Sealed Glass Fast Switching
Diodes
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter Value Units
PD Power Dissipation 300 mW
TSTG Storage Temperature Range -65 to +150
°C
TJ Operating Junction Temperature +150 °C
WIV Working Inverse Voltage 75 V
IO Average Rectified Current 150 mA
IFM Non-repetitive Peak Forward Current 450 mA
IFSURGE Peak Forward Surge Current
(Pulse Width = 1.0 µsecond) 2 A
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
Fast Switching Device (TRR <4.0 nS)
DO-34 Package (JEDEC DO-204)
Through-Hole Device Type Mounting
Hermetically Sealed Glass
Compression Bonded Construction
All External Surfaces Are Corrosion Resistant And Lads Are Readily Solderable
RoHS Compliant
Solder Hot Dip Tin (Sn) Terminal Finish
Cathode Indicated By Polarity Band
Electrical Characteristics TA = 25°C unless otherwise noted
Limits
Symbol Parameter Test Condition
Min Max
Unit
BV Breakdown Voltage IR=100µA
IR=5µA
100
75
Volts
IR Reverse Leakage Current VR=20V
VR=75V
25
5
nA
µA
VF Forward Voltage TC1N4448M, TC1N914BM
TC1N4148M, TC1N4148M
TC1N4448M, TC1N914BM
IF=5mA
IF=10mA
IF=100mA
0.62 0.72
1.0
1.0
Volts
TRR Reverse Recovery Time IF=10mA, VR=6V
RL=100
IRR=1mA
4 nS
C Capacitance VR=0V, f=1MHZ 4 pF
TC1N4148M/TC1N4448M/TC1N914BM
DEVICE MARKING DIAGRAM
(TC1N4148M)
AXIAL LEAD
DO34
L : Logo
Device Code : TC1NxxxxM
DEVICE MARKING DIAGRAM
(TC1N4448M / TC1N914BM)