SB1245 Ultra Low VF Schottky Barrier Rectifier Applications * This device is designed for low voltage, high frequency inverters, free-wheeling and polarity protection applications. * This is also designed as bypass diode for solar modules. Features * * * * * UL Flammability Classification 94V-O Environment Standards MIL-S-19500/228 Compliant Low Power Loss, High Efficiency High Surge Capacity Pb-free, RoHS Compliant Absolute Maximum Ratings * Symbol DO-201AD COLOR BAND DENOTES CATHODE TA = 25C unless otherwise noted Parameter Value Units VRRM Maximum Recurrent Peak Reverse Voltage 45 V VRMS Maximum RMS Voltage 31 V VDC Maximum DC Blocking Voltage 45 V IF(AV) Maximum Average Forward Current 12 A IFSM Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed on Rated Load (JEDEC Method) 150 A VF Maximum Forward Voltage at IF=12A 0.55 V IR Maximum DC Reverse Current at Rated VDC 0.1 10 mA I2t Rating for Fusing ( t<8.3ms ) 3.7 A2sec TJ Operating Junction Temperature Range In DC Forward Mode -55 to +150 -55 to +200 C Storage Temperature Range -55 to +175 C TSTG TJ=25C TJ=100C * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics Symbol RJL Parameter Typical Thermal Resistance, Junction to Lead Value Units 10.5 C/W * Temperature read point using thermocouple is at 10mm from case edge. (c) 2009 Fairchild Semiconductor Corporation SB1245 Rev. A2 www.fairchildsemi.com 1 SB1245 -- Ultra Low VF Schottky Barrier Rectifier December 2009 20 16 16 DC Forward Current [A] Average Forward Current [A] 20 12 8 4 12 8 4 Temperature read point using thermocouple is at 10mm from case edge. Temperature read point using thermocouple is at 10mm from case edge. 0 0 0 50 100 150 0 50 o 100 150 200 o Lead Temperature [ C] Lead Temperature [ C] Figure 1a. Average Forward Current Derating Curve Figure 1b. DC Forward Current Derating Curve 100 100 TJ=150 C IR- Instantaneous Reverse Current [mA] o o 10 o TJ=100 C IR- Reverse Current [mA] 1 o 0.1 TJ=85 C 0.01 1E-3 o TJ=25 C 1E-4 1E-5 o TJ= -40 C 1E-6 1E-7 5 10 15 20 25 30 35 40 45 TJ=150 C 10 o TJ=125 C o TJ=100 C 1 o TJ=75 C 0.1 0.01 o TJ=25 C 1E-3 0 VR- Reverse Voltage [V] 80 100 120 140 10000 CJ- Total Capacitance [pF] 10 IF- Forward Current [A] 60 Percent of Rated Reverse Voltage [%] 100 o TA=100 C 1 o TA=25 C 0.1 o TA= -40 C 0.2 0.4 0.6 0.8 1000 100 10 0.1 1.0 1 10 100 VR - Reverse Voltage [V] VF- Forward Voltage [V] Figure 5. Typical Junction Capacitance Figure 4. Forward Voltage vs. Forward Current (c) 2009 Fairchild Semiconductor Corporation SB1245 Rev. A2 40 Figure 3. Typical Reverse Characteristics Figure 2. Reverse Current vs. Reverse Voltage 0.01 0.0 20 www.fairchildsemi.com 2 SB1245 -- Ultra Low VF Schottky Barrier Rectifier Typical Performance Characteristics SB1245 -- Ultra Low VF Schottky Barrier Rectifier Physical Dimensions (c) 2009 Fairchild Semiconductor Corporation SB1245 Rev. A2 www.fairchildsemi.com 3 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I41 (c) 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com