BZT52-Series
www.vishay.com Vishay Semiconductors
Rev. 1.9, 20-Feb-18 1Document Number: 85760
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Zener Diodes
DESIGN SUPPORT TOOLS
FEATURES
• Silicon planar Zener diodes
• The Zener voltages are graded according to
the international E24 standard
• AEC-Q101 qualified available
• ESD capability according to AEC-Q101:
Human body model > 8 kV
Machine model > 800 V
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
PARAMETER VALUE UNIT
VZ range nom. 2.4 to 75 V
Test current IZT 2.5; 5 mA
VZ specification Pulse current
Circuit configuration Single
click logo to get started
Available
Models
Available
ORDERING INFORMATION
DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY
BZT52-series
BZT52C2V4-E3-08 to BZT52C75-E3-08
3000 (8 mm tape on 7" reel) 15 000/box
BZT52B2V4-E3-08 to BZT52B75-E3-08
BZT52C2V4-HE3-08 to BZT52C75-HE3-08
BZT52B2V4-HE3-08 to BZT52B75-HE3-08
BZT52C2V4-E3-18 to BZT52C75-E3-18
10 000 (8 mm tape on 13" reel) 10 000/box
BZT52B2V4-E3-18 to BZT52B75-E3-18
BZT52C2V4-HE3-18 to BZT52C75-HE3-18
BZT52B2V4-HE3-18 to BZT52B75-HE3-18
PACKAGE
PACKAGE NAME WEIGHT MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE SENSITIVITY
LEVEL SOLDERING CONDITIONS
SOD-123 10.3 mg UL 94 V-0 MSL level 1
(according J-STD-020) 260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Power dissipation
Diode on ceramic substrate 0.7 mm;
5 mm2 pad areas Ptot 500 mW
Diode on ceramic substrate 0.7 mm;
2.5 mm2 pad areas Ptot 410 mW
Zener current See table “Electrical Characteristics “
Thermal resistance junction to ambient air Valid provided that electrodes are kept at
ambient temperature RthJA 300 K/W
Junction temperature Tj150 °C
Storage temperature range Tstg -65 to +150 °C
Operating temperature range Top -55 to +150 °C
BZT52-Series
www.vishay.com Vishay Semiconductors
Rev. 1.9, 20-Feb-18 2Document Number: 85760
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
•I
ZT1 = 5 mA, IZT2 = 1 mA
(1) Measured with pulses tp = 5 ms
(2) IZT1 = 2.5 mA
(3) IZT2 = 0.5 mA
(4) Valid provided that electrodes are kept at ambient temperature
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART
NUMBER
MARKING
CODE
ZENER VOLTAGE
RANGE (1)
TEST
CURRENT
REVERSE
VOLTAGE
DYNAMIC
RESISTANCE
TEMP.
COEFFICIENT
ADMISSABLE ZENER
CURRENT (4)
VZ at IZT1 IZT1 IZT2 VR at IRZZ at
IZT1
ZZK at
IZT2
VZ IZ at
Tamb = 45 °C
IZ at
Tamb = 25 °C
VmA VnA 10-4/°C mA
MIN. NOM. MAX.
BZT52C2V4 W1 2.2 2.4 2.6 5 1 - - 85 600 -9 to -4 - -
BZT52C2V7 W2 2.5 2.7 2.9 5 1 - - 75 (< 83) < 500 -9 to -4 113 134
BZT52C3V0 W3 2.8 3.0 3.2 5 1 - - 80 (< 95) < 500 -9 to -3 98 118
BZT52C3V3 W4 3.1 3.3 3.5 5 1 - - 80 (< 95) < 500 -8 to -3 92 109
BZT52C3V6 W5 3.4 3.6 3.8 5 1 - - 80 (< 95) < 500 -8 to -3 85 100
BZT52C3V9 W6 3.7 3.9 4.1 5 1 - - 80 (< 95) < 500 -7 to -3 77 92
BZT52C4V3 W7 4 4.3 4.6 5 1 - - 80 (< 95) < 500 -6 to -1 71 84
BZT52C4V7 W8 4.4 4.7 5 5 1 - - 70 (< 78) < 500 -5 to +2 64 76
BZT52C5V1 W9 4.8 5.1 5.4 5 1 > 0.8 100 30 (< 60) < 480 -3 to +4 56 67
BZT52C5V6 WA 5.2 5.6 6 5 1 > 1 100 10 (< 40) < 400 -2 to +6 50 59
BZT52C6V2 WB 5.8 6.2 6.6 5 1 > 2 100 4.8 (< 10) < 200 -1 to +7 45 54
BZT52C6V8 WC 6.4 6.8 7.2 5 1 > 3 100 4.5 (< 8) < 150 +2 to +7 41 49
BZT52C7V5 WD 7 7.5 7.9 5 1 > 5 100 4 (< 7) < 50 +3 to +7 37 44
BZT52C8V2 WE 7.7 8.2 8.7 5 1 > 6 100 4.5 (< 7) < 50 +4 to +7 34 40
BZT52C9V1 WF 8.5 9.1 9.6 5 1 > 7 100 4.8 (< 10) < 50 +5 to +8 30 36
BZT52C10 WG 9.4 10 10.6 5 1 > 7.5 100 5.2 (< 15) < 70 +5 to +8 28 33
BZT52C11 WH 10.4 11 11.6 5 1 > 8.5 100 6 (< 20) < 70 +5 to +9 25 30
BZT52C12 WI 11.4 12 12.7 5 1 > 9 100 7 (< 20) < 90 +6 to +9 23 28
BZT52C13 WK 12.4 13 14.1 5 1 > 10 100 9 (< 25) < 110 +7 to +9 21 25
BZT52C15 WL 13.8 15 15.6 5 1 > 11 100 11 (< 30) < 110 +7 to +9 19 23
BZT52C16 WM 15.3 16 17.1 5 1 > 12 100 13 (< 40) < 170 +8 to +9.5 17 20
BZT52C18 WN 16.8 18 19.1 5 1 > 14 100 18 (< 50) < 170 +8 to +9.5 15 18
BZT52C20 WO 18.8 20 21.2 5 1 > 15 100 20 (< 50) < 220 +8 to +10 14 17
BZT52C22 WP 20.8 22 23.3 5 1 > 17 100 25 (< 55) < 220 +8 to +10 13 16
BZT52C24 WR 22.8 24 25.6 5 1 > 18 100 28 (< 80) < 220 +8 to +10 11 13
BZT52C27 WS 25.1 27 28.9 5 1 > 20 100 30 (< 80) < 250 +8 to +10 10 12
BZT52C30 WT 28 30 32 5 1 > 22.5 100 35 (< 80) < 250 +8 to +10 9 10
BZT52C33 WU 31 33 35 5 1 > 25 100 40 (< 80) < 250 +8 to +10 8 9
BZT52C36 WW 34 36 38 5 1 > 27 100 40 (< 90) < 250 +8 to +10 8 9
BZT52C39 WX 37 39 41 5 1 > 29 100 50 (< 90) < 300 +10 to +12 7 8
BZT52C43 WY 40 43 46 5 1 > 32 100 60 (< 100) < 700 +10 to +12 6 7
BZT52C47 WZ 44 47 50 5 1 > 35 100 70 (< 100) < 750 +10 to +12 5 6
BZT52C51 X1 48 51 54 5 1 > 38 100 70 (< 100) < 750 +10 to +12 5 6
BZT52C56 X2 52 56 60 2.5 0.5 - - < 135 (2) < 1000 (3) typ. +10 (2) --
BZT52C62 X3 58 62 66 2.5 0.5 - - < 150 (2) < 1000 (3) typ. +10 (2) --
BZT52C68 X4 64 68 72 2.5 0.5 - - < 200 (2) < 1000 (3) typ. +10 (2) --
BZT52C75 X5 70 75 79 2.5 0.5 - - < 250 (2) < 1500 (3) typ. +10 (2) --
BZT52-Series
www.vishay.com Vishay Semiconductors
Rev. 1.9, 20-Feb-18 3Document Number: 85760
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
•I
ZT1 = 5 mA, IZT2 = 1 mA
(1) Measured with pulses tp = 5 ms
(2) IZT1 = 2.5 mA
(3) IZT2 = 0.5 mA
(4) Valid provided that electrodes are kept at ambient temperature
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART
NUMBER
MARKING
CODE
ZENER VOLTAGE
RANGE (1)
TEST
CURRENT
REVERSE
VOLTAGE
DYNAMIC
RESISTANCE
TEMP.
COEFFICIENT
ADMISSABLE ZENER
CURRENT (4)
VZ at IZT1 IZT1 IZT2 VR at IRZZ at IZT1 ZZK at
IZT2
VZ
I
Z
at
T
amb
= 45 °C
I
Z
at
T
amb
= 25 °C
VmA VnA 10-4/°C mA
MIN. NOM. MAX.
BZT52B2V4 W1 2.35 2.4 2.45 5 1 - - 85 600 -9 to -4 - -
BZT52B2V7 W2 2.65 2.7 2.75 5 1 - - 75 (< 83) < 500 -9 to -4 113 134
BZT52B3V0 W3 2.94 3.0 3.06 5 1 - - 80 (< 95) < 500 -9 to -3 98 118
BZT52B3V3 W4 3.23 3.3 3.37 5 1 - - 80 (< 95) < 500 -8 to -3 92 109
BZT52B3V6 W5 3.53 3.6 3.67 5 1 - - 80 (< 95) < 500 -8 to -3 85 100
BZT52B3V9 W6 3.82 3.9 3.98 5 1 - - 80 (< 95) < 500 -7 to -3 77 92
BZT52B4V3 W7 4.21 4.3 4.39 5 1 - - 80 (< 95) < 500 -6 to -1 71 84
BZT52B4V7 W8 4.61 4.7 4.79 5 1 - - 70 (< 78) < 500 -5 to +2 64 76
BZT52B5V1 W9 5 5.1 5.2 5 1 > 0.8 100 30 (< 60) < 480 -3 to +4 56 67
BZT52B5V6 WA 5.49 5.6 5.71 5 1 > 1 100 10 (< 40) < 400 -2 to +6 50 59
BZT52B6V2 WB 6.08 6.2 6.32 5 1 > 2 100 4.8 (< 10) < 200 -1 to +7 45 54
BZT52B6V8 WC 6.66 6.8 6.94 5 1 > 3 100 4.5 (< 8) < 150 +2 to +7 41 49
BZT52B7V5 WD 7.35 7.5 7.65 5 1 > 5 100 4 (< 7) < 50 +3 to +7 37 44
BZT52B8V2 WE 8.04 8.2 8.36 5 1 > 6 100 4.5 (< 7) < 50 +4 to +7 34 40
BZT52B9V1 WF 8.92 9.1 9.28 5 1 > 7 100 4.8 (< 10) < 50 +5 to +8 30 36
BZT52B10 WG 9.8 10 10.2 5 1 > 7.5 100 5.2 (< 15) < 70 +5 to +8 28 33
BZT52B11 WH 10.8 11 11.2 5 1 > 8.5 100 6 (< 20) < 70 +5 to +9 25 30
BZT52B12 WI 11.8 12 12.2 5 1 > 9 100 7 (< 20) < 90 +6 to +9 23 28
BZT52B13 WK 12.7 13 13.3 5 1 > 10 100 9 (< 25) < 110 +7 to +9 21 25
BZT52B15 WL 14.7 15 15.3 5 1 > 11 100 11 (< 30) < 110 +7 to +9 19 23
BZT52B16 WM 15.7 16 16.3 5 1 > 12 100 13 (< 40) < 170 +8 to +9.5 17 20
BZT52B18 WN 17.6 18 18.4 5 1 > 14 100 18 (< 50) < 170 +8 to +9.5 15 18
BZT52B20 WO 19.6 20 20.4 5 1 > 15 100 20 (< 50) < 220 +8 to +10 14 17
BZT52B22 WP 21.6 22 22.4 5 1 > 17 100 25 (< 55) < 220 +8 to +10 13 16
BZT52B24 WR 23.5 24 24.5 5 1 > 18 100 28 (< 80) < 220 +8 to +10 11 13
BZT52B27 WS 26.5 27 27.5 5 1 > 20 100 30 (< 80) < 250 +8 to +10 10 12
BZT52B30 WT 29.4 30 30.6 5 1 > 22.5 100 35 (< 80) < 250 +8 to +10 9 10
BZT52B33 WU 32.3 33 33.7 5 1 > 25 100 40 (< 80) < 250 +8 to +10 8 9
BZT52B36 WW 35.3 36 36.7 5 1 > 27 100 40 (< 90) < 250 +8 to +10 8 9
BZT52B39 WX 38.2 39 39.8 5 1 > 29 100 50 (< 90) < 300 +10 to +12 7 8
BZT52B43 WY 42.1 43 43.9 5 1 > 32 100 60 (< 100) < 700 +10 to +12 6 7
BZT52B47 WZ 46.1 47 47.9 5 1 > 35 100 70 (< 100) < 750 +10 to +12 5 6
BZT52B51 X1 50 51 52 5 1 > 38 100 70 (< 100) < 750 +10 to +12 5 6
BZT52B56 X2 54.9 56 57.1 2.5 0.5 - - < 135 (2) < 1000 (3) typ. +10 (2) --
BZT52B62 X3 60.8 62 63.2 2.5 0.5 - - < 150 (2) < 1000 (3) typ. +10 (2) --
BZT52B68 X4 66.6 68 69.4 2.5 0.5 - - < 200 (2) < 1000 (3) typ. +10 (2) --
BZT52B75 X5 73.5 75 76.5 2.5 0.5 - - < 250 (2) < 1500 (3) typ. +10 (2) --
BZT52-Series
www.vishay.com Vishay Semiconductors
Rev. 1.9, 20-Feb-18 4Document Number: 85760
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Forward characteristics
Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature
Fig. 3 - Dynamic Resistance vs. Zener Current
Fig. 4 - Dynamic Resistance vs. Zener Current
Fig. 5 - Dynamic Resistance vs. Zener Current
Fig. 6 - Thermal Differential Resistance vs. Zener Voltage
18114
mA
10
3
10
2
10
-1
10
-2
10
-3
10
-4
10
-5
10
1
IF
VF
0 0.2 0.4 0.6 0.8 1V
T
J
= 100 °C
T
J
= 25 °C
18888
500
400
300
200
100
0
mW
Ptot
2001000°C
Tamb
18117
1000
5
4
3
2
5
4
3
2
100
1
r
zj
0.1
25 25
110
I
Z
T
J
= 25 °C
2.7
5
4
3
2
10
25
100 mA
3.6
4.7
5.1
5.6
Ω
18119
100
5
4
3
2
5
4
3
2
10
rzj
0.1
25 25
110
I
Z
1
25
100 mA
Ω
T
J
= 25 °C
33
27
22
18
15
12
10
6.8/8.2
6.2
18120
10
3
7
5
4
3
2
7
5
4
3
2
10
Ω
0.1
2345 2345
110
mA
R
zj
I
Z
T
j
= 25 °C
47 + 51
43
39
36
10
2
18121
103
5
4
3
2
5
4
3
2
102
1
Rzth
5
4
3
2
10
Ω
12345 2345
10 100 V
VZ at IZ = 5 mA
negative positive
Δ
Δ
VZ
Tj
Rzth = RthA x VZ x
BZT52-Series
www.vishay.com Vishay Semiconductors
Rev. 1.9, 20-Feb-18 5Document Number: 85760
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Dynamic Resistance vs. Zener Voltage
Fig. 8 - Temperature Dependence of Zener Voltage vs.
Zener Voltage
Fig. 9 - Change of Zener Voltage vs. Junction Temperature
Fig. 10 - Temperature Dependence of Zener Voltage vs.
Zener Voltage
Fig. 11 - Change of Zener Voltage vs. Junction Temperature
Fig. 12 - Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener Voltage
18122
100
7
5
4
3
2
7
5
4
3
2
1
Ω
R
zj
10
Tj = 25 °C
IZ = 5 mA
12345 2345
10 100 V
V
Z
18135
Δ
25
20
15
10
5
0
- 5
mV/°C
Δ
VZ
Tj
1
2345 2345
10 100 V
VZ at IZ = 5 mA
V 27 V, I = 2 mA
≥
5 mA
1 mA
20 mA
IZ =
18124
V
Z
at I
Z
= 5 mA
25 15
10
8
7
6.2
5.9
5.6
5.1
4.7
3.6
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
- 1
- 0.2
VZ
V
Tj
020406080
100 120 140 C
Δ
18136
Δ
100
80
60
40
20
0
mV/°C
Δ
VZ
Tj
020 40 80
60 100 V
VZ at IZ = 2 mA
IZ = 5 mA
18158
0 20 40 60 80 100 120 140 °C
9
8
7
6
5
4
3
2
1
0
- 1
V
VZ at IZ = 5 mA
IZ = 5 mA
ΔVZ
Tj
51
43
36
BZT52-Series
www.vishay.com Vishay Semiconductors
Rev. 1.9, 20-Feb-18 6Document Number: 85760
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 13 - Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener Voltage
Fig. 14 - Breakdown Characteristics
Fig. 15 - Breakdown Characteristics
Fig. 16 - Breakdown Characteristics
18160
Δ
5
4
3
2
1
0
V
V
Z
020 40 60 80 100 V
V
Z
at I
Z
= 5 mA
IZ = 5 mA
IZ = 2.5 mA
VZ = rzth x IZ
Δ
18111
Test
current
I
Z
5 mA
123456789
0 10 V
V
Z
3.3
3.9 5.6
2.7
mA
50
40
30
20
10
0
l
Z
T
j
= 25 °C
8.2
6.8
4.7
18112
10 20 30
0 40 V
V
Z
mA
30
20
10
0
l
Z
33
Test
current
I
Z
5 mA
T
j
= 25 °C
10
12
15
18
22
27
36
18157
BZT52-Series
www.vishay.com Vishay Semiconductors
Rev. 1.9, 20-Feb-18 7Document Number: 85760
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters (inches): SOD-123
0.1 (0.004) max.
2.85 (0.112)
2.55 (0.100)
3.85 (0.152)
3.55 (0.140)
1.7 (0.067)
1.40 (0.055)
Mounting Pad Layout
2.5 (0.098)
0.85 (0.033) 0.85 (0.033)
0.85 (0.033)
Cathode bar
0.65 (0.026)
0.45 (0.018)
0.10 (0.004)
1 (0.039)
0.15 (0.006)
1.35 (0.053)
0.2 (0.008)
0° to 8°
0.45 (0.018)
0.25 (0.010)
0.5 (0.020) ref.
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED