"2N7002PV,115" - NXP SEMICONDUCTORS

1. Product profile

1.1 General description

Dual N-channel enhanceme nt mode Field-Effect T ran sistor (FET) in an ultra small and flat

lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET

technology.

1.2 Features and benefits

Logic-level compatible

Very fast switching

Trench MOSFET technology

AEC-Q101 qualified

1.3 Applications

Relay driver

High-speed line driver

Low-side loadswitch

Switching circuits

1.4 Quick reference data

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad

for drain 1 cm2.

2N7002PV

60 V, 350 mA N-channel Trench MOSFET

Rev. 1 — 5 August 2010 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transis tor

VDS drain-source volt ag e Tamb =25°C--60V

VGS gate-source voltage Tamb =25°C--±20 V

IDdrain current Tamb =25°C;

VGS =10V [1] --350mA

RDSon drain - so urce on-state

resistance Tj=25°C;

VGS =10V;

ID= 500 mA

-11.6Ω

Product data sheet Rev. 1 — 5 August 2010 2 of 16

NXP Semiconductors 2N7002PV

60 V, 350 mA N-channel Trench MOSFET

2. Pinning information

3. Ordering information

4. Marking

5. Limiting values

Table 2. Pinning

Pin Symbol Description Simplified outline Graphic symbol

1S1source1

2 G1 gate1

3D2drain2

4S2source2

5 G2 gate2

6D1drain1 123

456

G1S2

msd90

Table 3. Ordering i nformation

Type number Package

Name Description Version

2N7002PV - plastic surface-mounted package; 6 leads SOT666

Table 4. Marking codes

Type number Marking code

2N7002PV ZF

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per transis tor

VDS drain-source voltage Tamb =25°C-60V

VGS gate-source voltage Tamb =25°C-±20 V

IDdrain current VGS =10V [1]

Tamb =25°C-350mA

Tamb =100°C-250mA

IDM peak drain current Tamb =25°C;

single pulse; tp≤10 μs-1.2A

Product data sheet Rev. 1 — 5 August 2010 3 of 16

NXP Semiconductors 2N7002PV

60 V, 350 mA N-channel Trench MOSFET

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

Ptot total power dissipation Tamb =25°C[2] -330mW

[1] -390mW

Tsp =25°C - 1090 mW

Source-drain diode

ISsource current Tamb =25°C[1] -350mA

Per device

Ptot total power dissipation Tamb =25°C[2] -500mW

Tjjunction temperature 150 °C

Tamb ambient temperature −55 +150 °C

Tstg storage temperature −65 +150 °C

Table 5. Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Fig 1. Normalized total power dissipation as a

function of ambient temperature Fig 2. Normalized continuous drain current as a

function of ambient temperature

Tamb (°C)

−75 17512525 75−25

017aaa001

120

Pder

(%)

Tamb (°C)

−75 17512525 75−25

017aaa002

120

Ider

(%)

Pder Ptot

Ptot 25°C()

------------------------100 %×=Ider ID

ID25°C()

--------------------100 %×=

Product data sheet Rev. 1 — 5 August 2010 4 of 16

NXP Semiconductors 2N7002PV

60 V, 350 mA N-channel Trench MOSFET

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.

IDM = single pulse

(1) tp= 100 μs

(2) tp=1ms

(3) tp=10ms

(4) DC; Tsp =25°C

(5) tp= 100 ms

(6) DC; Tamb =25°C; drain mounting pad 1 cm2

Fig 3. Per transistor : Safe ope r ating area; junction to ambient; co nti nuous and peak drain currents as a

function of drain-source voltage

017aaa063

10−1

10−2

(A)

10−3

VDS (V)

10−1102

101

(1)

(2)

(3)

(4)

(5)

(6)

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Per transis tor

Rth(j-a) thermal resistance from

junction to ambient in free air [1] - 330 380 K/W

[2] - 280 320 K/W

Rth(j-sp) thermal resistance from

junction to solder point --115K/W

Per device

Rth(j-a) thermal resistance from

junction to ambient in free air [1] - - 250 K/W

Product data sheet Rev. 1 — 5 August 2010 5 of 16

NXP Semiconductors 2N7002PV

60 V, 350 mA N-channel Trench MOSFET

FR4 PCB, standard footprint

Fig 4. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;

typical valu e s

FR4 PCB, mounting pad for drain 1 cm2

Fig 5. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;

typical valu e s

017aaa064

tp (s)

10−3102103

10110−210−1

102

103

Zth(j-a)

(K/W)

duty cycle = 1

0.75

0.5 0.33

0.25 0.2

0.1 0.05

0.02

0.01

017aaa065

tp (s)

10−3102103

10110−210−1

102

103

Zth(j-a)

(K/W)

duty cycle = 1

0.75

0.5 0.33

0.25 0.2

0.1 0.05

0.02

0.01

Product data sheet Rev. 1 — 5 August 2010 6 of 16

NXP Semiconductors 2N7002PV

60 V, 350 mA N-channel Trench MOSFET

7. Characteristics

[1] Pulse test: tp≤300 μs; δ≤0.01.

Table 7. Characteristics

Tj=25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Per transis tor

Static characteristics

V(BR)DSS drain-source breakdown

voltage ID=10μA; VGS =0V 60--V

VGS(th) gate-source threshold

voltage ID=250μA; VDS =V

GS 1.1 1.75 2.4 V

IDSS drain leakage current VDS =60V; V

GS =0V

Tj=25°C --1μA

Tj= 150 °C --10μA

IGSS gate leakage current VGS =±20 V; VDS = 0 V - - 100 nA

RDSon drain-source on-state

resistance [1]

VGS =5V; I

D=50mA - 1.3 2 Ω

VGS =10V; I

D=500mA - 1 1.6 Ω

gfs forward

transconductance VDS =10V; I

D= 200 mA [1] - 400 - mS

Dynamic characteristics

QG(tot) total gate charge ID=300mA;

VDS =30V;

VGS =4.5V

-0.60.8nC

QGS gate-source charge - 0.2 - nC

QGD gate-drain charge - 0.2 - nC

Ciss input capacitance VGS =0V; V

DS =10V;

f=1MHz - 3050pF

Coss output capacitance - 7 - pF

Crss reverse transfer

capacitance -4-pF

td(on) turn-on delay time VDD =50V;

RL=250Ω;

VGS =10V;

RG=6Ω

- 36ns

trrise time -4-ns

td(off) turn-off delay time - 10 20 ns

tffall time - 5 - ns

Source-drain diode

VSD source-drain voltage IS=115mA; V

GS = 0 V 0.47 0.75 1.1 V

Product data sheet Rev. 1 — 5 August 2010 7 of 16

NXP Semiconductors 2N7002PV

60 V, 350 mA N-channel Trench MOSFET

Tamb =25°CT

amb =25°C; VDS =5V

(1) minimum values

(2) typical values

(3) maximum values

Fig 6. Per transistor: Output characteristics: drain

current as a function of drain-source voltage;

typical valu e s

Fig 7. Pe r transistor: Sub-threshold drain current as

a function of gate-source voltage

Tamb =25°C

(1) VGS =3.25V

(2) VGS =3.5V

(3) VGS =4V

(4) VGS =5V

(5) VGS =10V

ID=500mA

(1) Tamb = 150 °C

(2) Tamb =25°C

Fig 8. Per transistor: Drain-so urc e on-s tate

resistance as a function of drain current;

typical valu e s

Fig 9. Per transistor: Drain-source on-state

resistance as a function of gate-source

voltage; typical values

VDS (V)

0.0 4.03.01.0 2.0

017aaa017

0.4

0.5

0.3

0.2

0.1

0.6

0.7

(A)

0.0

3.5 V

VGS = 4.0 V

3.0 V

2.75 V

2.5 V

3.25 V

017aaa018

VGS (V)

0321

10−4

10−5

10−3

(A)

10−6

(2)(1) (3)

ID (A)

0.0 1.00.80.4 0.60.2

017aaa019

5.0

2.5

7.5

10.0

RDSon

(Ω)

0.0

(2)

(1)

(3)

(4)

(5)

VGS (V)

0.0 10.08.04.0 6.02.0

017aaa020

2.0

4.0

6.0

RDSon

(Ω)

0.0

(1)

(2)

Product data sheet Rev. 1 — 5 August 2010 8 of 16

NXP Semiconductors 2N7002PV

60 V, 350 mA N-channel Trench MOSFET

VDS >I

D×RDSon

(1) Tamb =25°C

(2) Tamb = 150 °C

Fig 10. Per transistor: T ransfer characteristics: drain

current as a function of gate-source voltage;

typical valu e s

Fig 11. Per transistor: Normalized drain-source

on-state resistance as a function of ambient

temperature; typical value s

ID= 0.25 mA; VDS =V

(1) maximum values

(2) typical values

(3) minimum values

f=1MHz; V

GS =0V

(1) Ciss

(2) Coss

(3) Crss

Fig 12. P e r tr ansistor: Gate-source thre sh old voltage

as a function of ambient temperature Fig 13. Per transistor: Input, output and reverse

transfer capacitances as a function of

drain-so ur c e vo ltage; typica l values

VGS (V)

0.0 5.04.02.0 3.01.0

017aaa021

0.4

0.6

0.2

0.8

1.0

(A)

0.0

(1) (2)

(2) (1)

Tamb (°C)

−60 180120060

017aaa022

1.2

0.6

1.8

2.4

0.0

aRDSon

RDSon 25°C()

-----------------------------

Tamb (°C)

−60 180120060

017aaa023

1.0

2.0

3.0

VGS(th)

(V)

0.0

(2)

(1)

(3)

017aaa024

VDS (V)

10−1102

101

102

(pF)

(2)

(1)

(3)

Product data sheet Rev. 1 — 5 August 2010 9 of 16

NXP Semiconductors 2N7002PV

60 V, 350 mA N-channel Trench MOSFET

ID= 300 mA; VDS =30V; T

amb =25°C

Fig 14. Per transis t or : Gate-source voltage as a

function of gate charge; typ ic al values Fig 15. Per transist or : Gate ch ar g e wa v eform

definitions

VGS =0V

(1) Tamb = 150 °C

(2) Tamb =25°C

Fig 16. Per transistor: Source current as a function of source-drain voltage; typical values

QG (nC)

0.0 0.80.60.2 0.4

017aaa025

2.0

3.0

1.0

4.0

5.0

VGS

(V)

0.0

003aaa50

VGS

VGS(th)

QGS1 QGS2

QGD

VDS

QG(tot)

QGS

VGS(pl)

VSD (V)

0.0 1.20.80.4

017aaa026

0.4

0.8

1.2

(A)

0.0

(1) (2)

Product data sheet Rev. 1 — 5 August 2010 10 of 16

NXP Semiconductors 2N7002PV

60 V, 350 mA N-channel Trench MOSFET

8. Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in auto motive applications.

Fig 17. Duty cycle definition

006aaa812

duty cycle δ =

Product data sheet Rev. 1 — 5 August 2010 11 of 16

NXP Semiconductors 2N7002PV

60 V, 350 mA N-channel Trench MOSFET

9. Package outline

Fig 18. Package outline SOT666

UNIT bpcDE e1HELpw

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

04-11-08

06-03-16

IEC JEDEC JEITA

mm 0.27

0.17

0.18

0.08

1.7

1.5

1.3

1.1 0.5

1.0 1.7

1.5 0.1

0.1

DIMENSIONS (mm are the original dimensions)

0.3

0.1

SOT666

pin 1 index

detail X

0 1 2 mm

scale

0.6

0.5

123

456

Plastic surface-mounted package; 6 leads SOT66

wMA

Product data sheet Rev. 1 — 5 August 2010 12 of 16

NXP Semiconductors 2N7002PV

60 V, 350 mA N-channel Trench MOSFET

10. Soldering

Reflow soldering is the only recommended soldering method.

Fig 19. Reflow soldering footprint SOT666

solder lands

placement area

occupied area

solder paste

sot666_

2.75

2.45

2.1

1.6

0.4

(6×)

0.55

(2×)

0.25

(2×)

0.6

(2×)

0.65

(2×)

0.3

(2×)

0.325

(4×)

0.45

(4×)

0.5

(4×)

0.375

(4×)

1.72

1.7

1.075

0.538

Dimensions in mm

Product data sheet Rev. 1 — 5 August 2010 13 of 16

NXP Semiconductors 2N7002PV

60 V, 350 mA N-channel Trench MOSFET

11. Revision history

Table 8. Revision history

Document ID Release date Data sheet status Change notice Supersedes

2N7002PV v.1 20100805 Product data sheet - -

Product data sheet Rev. 1 — 5 August 2010 14 of 16

NXP Semiconductors 2N7002PV

60 V, 350 mA N-channel Trench MOSFET

12. Legal information

12.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semicond uctors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre va il.

Product specificat io n — The information and data provided in a Product

data sheet shall define the specification of the product as agr eed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

12.3 Disclaimers

Limited warr a nty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warrant ies, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequ ential damages (including - wit hout limitation - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconduct ors’ aggregate and cumulati ve liability toward s

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semicondu ctors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suit able for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in perso nal injury, death or severe propert y or environmental

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applicati ons or customer product

design. It is customer’s sole responsibility to determine whet her the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Custo mers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party custo m er(s). Customer is responsible for doing all necessary

testing for the customer’s applications and pro ducts using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by cust omer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter m s and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing i n this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or the gr ant,

conveyance or implication of any license under any copyrights, patents or

other industrial or inte llectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulatio ns. Export might require a prior

authorization from national authorities.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contain s data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 1 — 5 August 2010 15 of 16

NXP Semiconductors 2N7002PV

60 V, 350 mA N-channel Trench MOSFET

Quick reference data — The Quick reference dat a is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

12.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respective ow ners.

13. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors 2N7002PV

60 V, 350 mA N-channel Trench MOSFET

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 5 August 2010

Document identifier: 2N7002PV

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information ’.

14. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . 10

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . 10

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11

10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15

13 Contact information. . . . . . . . . . . . . . . . . . . . . 15

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16