KST-3038-001 1
BC856UF
PNP Silicon Transistor
Descriptions
• General purpose application
• Switching application
Featur es
• High voltage : VCEO=-55V
• Complementary pair with BC846UF
Ordering Information
Type NO. Marking Package Code
BC856UF CV SOT-323F
: hFE rank
Outline Dimensions unit :
mm
S
Se
em
mi
ic
co
on
nd
du
uc
ct
to
or
r
PIN Conne ctions
1. Bas e
2. Emitter
3. Collector
2.1±0.1
1.30±0.1
1
0.30~0.40
1.30 BSC
2
2.0±0.1
0.11±0.05
0.70-0.15
3
0~0.1
+0.1
KST-3038-001 2
BC856UF
Absolute maximum ratings (Ta=25°
°°
°C)
Characteristic Symbol Ratings Unit
Collector-Base vo ltage VCBO -80 V
Collector-Emitter vo ltage VCEO -55 V
Emitter-Base voltage VEBO -5 V
Collector current IC -100 mA
Collector dissipation PC 200 mW
Junction temperature Tj 150
°C
Storage temperature Tstg -55~150
°C
Electrical Characteristics (Ta=25°
°°
°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collector-Emitter breakd own voltage BVCEO I
C=-1mA, IB=0 -55 - - V
Base- Emitter tur n on voltage VBE(ON) V
CE=-5V, IC=-2mA - - -700 mV
Base- Emitter satura tion volta g e VBE(sat) I
C=-100mA, IB=-5mA - -900 - mV
Collector- Emitter saturation v olta ge VCE(sat) I
C=-100mA, IB=-5mA - - -650 mV
Collector cut-off current ICBO V
CB=-35V, IB=0 - - -15 nA
DC current gain hFE* VCE=-5V, IB=-2mA 110 - 800 -
Transition frequency fT V
CB=-5V, IC=-10mA - 150 - MHz
Collector output capacitance Cob V
CB=-10V, IE=0, f =1MHz - - 4.5 pF
Noise figure NF VCE=-5V, IC=-200µA,
f=1KHz,Rg=2KΩ - - 10 dB
* : hFE rank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800
KST-3038-001 3
BC856UF
Electrical Characteristic Curves
Fig. 3 IC-VCE Fig. 4 hFE-IC
Fig. 5 VCE(sat) -IC
Fig. 2 IC-VBE
Fig. 1 PC-Ta
