1N4678~1N4717
Excel Semiconductor
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Zener diode
Features
1. High reliability
2. Very sharp reverse characteristi c
3. Zener voltage 1.8V to 43V
4. VZ-tolerance±5%
Applications
Voltage st abili zation
Absolute Maximum Ratings
Tj=25℃ Parameter Test Conditions Type Symbol Value Unit
Power dissipation Tamb≤75℃ P
V 500 mW
Z-current IZ PV/VZ mA
Junction temperature Tj 200 ℃
Storage temperature range Tstg -65~+200 ℃
Maximum Thermal Resistance
Tj=25℃ Parameter Test Conditions Symbol Value Unit
Junction ambient I=9.5mm(3/8”) T L=constant RthJA 300 K/W
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the
recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may
affect device reliability.
Electrical Characteristics
Tj=25℃ Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=100mA VF 1.5 V
1N4678~1N4717
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Zener voltage VZ @ IZT=50μA
VZnom1) VZMin VZMax IR at VR3) IZM2) ΔVZ4) Type1)
V V V μA V mA V
1N4678 1.8 1.71 1.89 7.5 1 120 0.7
1N4679 2 1.9 2.1 5 1 110 0.7
1N4680 2.2 2.09 2.31 4 1 100 0.75
1N4681 2.4 2.28 2.52 2 1 95 0.8
1N4682 2.7 2.565 2.835 1 1 90 0.85
1N4683 3 2.85 3.15 0.8 1 85 0.9
1N4684 3.3 3.135 3.465 7.5 1.5 80 0.95
1N4685 3.6 3.42 3.78 7.5 2 75 0.95
1N4686 3.9 3.705 4.095 5 2 70 0.97
1N4687 4.3 4.085 4.515 4 2 65 0.99
1N4688 4.7 4.465 4.935 10 3 60 0.99
1N4689 5.1 4.845 5.355 10 3 55 0.97
1N4690 5.6 5.32 5.88 10 4 50 0.96
1N4691 6.2 5.89 6.51 10 5 45 0.95
1N4692 6.8 6.46 7.14 10 5.1 35 0.9
1N4693 7.5 7.125 7.875 10 5.7 31.8 0.75
1N4694 8.2 7.79 8.61 1 6.2 29 0.5
1N4695 8.7 8.265 9.135 1 6.6 27.4 0.1
1N4696 9.1 8.645 9.555 1 6.9 26.2 0.08
1N4697 10 9.5 10.5 1 7.6 24.8 0.1
1N4698 11 10.45 11.55 0.05 8.4 21.6 0.11
1N4699 12 11.4 12.6 0.05 9.1 20.4 0.12
1N4700 13 12.35 13.65 0.05 9.8 19 0.13
1N4701 14 13.3 14.7 0.05 10.6 17.5 0.14
1N4702 15 14.25 15.75 0.05 11.4 16.3 0.15
1N4703 16 15.20 16.8 0.05 12.1 15.4 0.16
1N4704 17 16.15 17.85 0.05 12.9 14.5 0.17
1N4705 18 17.10 18.9 0.05 13.6 13.2 0.18
1N4707 20 19 21 0.01 15.2 11.9 0.2
1N4711 27 25.65 28.35 0.01 20.4 8.8 0.27
1N4713 30 28.5 31.5 0.01 22.8 7.9 0.3
1N4714 33 31.35 34.65 0.01 25 7.2 0.33
1N4715 36 34.2 37.8 0.01 27.3 6.6 0.36
1N4716 39 37.05 40.95 0.01 29.6 6.1 0.39
1N4717 43 40.85 45.15 0.01 32.6 5.5 0.43
1) Tolerance and voltage designation(Vz):
The type numbers shown have a standard tolerance of ±5% on the nominal zener voltage, C for ±2%, D
for ±1%.
2) Maximum zener current ratings(IZM):
Maximum zener current ratings are based on maximum zener voltage of the individual units and JEDEC
250 mW rating.
3) Reverse leakage current(IR):
Reverse leakage current s are guaranteed and measured at VR as shown on the table.
4) Maximum voltage change(ΔVZ):
Voltage chan ge is equal to the diff erence between VZ at 100μA and VZ at 10μA.
1N4678~1N4717
Excel Semiconductor
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Characteristics (Tj=25℃ unless otherwise specified)
Figure 1. Typical Thermal Resistance Figure 2. Typical Forward Characteristics
Figure 3. Temperature coefficients
(-55℃ to +150℃ temperature range; 90% of the units are in the ranges indicated.)
Figure 4. Effect of zener current on zener impedance Figure 5. Effect of zener voltage on zener impedance
1N4678~1N4717
Excel Semiconductor
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Figure 6. Zener Voltage versus Zener Current – Vz=1 thru 16 Volts
Figure 7. Zener Voltage versus Zener Current – Vz=15 thru 30 Volts
1N4678~1N4717
Excel Semiconductor
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Figure 8. Zener Voltage versus Zener Current – Vz=30 thru 75 Volts
1N4678~1N4717
Excel Semiconductor
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Dimensions in mm
Standard Glass Case
JEDEC DO-35
Marking
N
6
9
1
4
8
Cathode Anode
26 min. 26 min. 4.2 max.
Φ0.55 max.
Φ2.0 max.
Cathode identification Type No.
1
4
N
6