BCW67 SERIES
BCW68 SERIES
SURFACE MOUNT
PNP SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCW67 and BCW68
Series types are PNP Silicon Transistors manufactured
by the epitaxial planar process, epoxy molded in a
surface mount package, designed for general purpose
switching and amplifier applications.
MARKING CODE: SEE MARKING CODE TABLE
ON FOLLOWING PAGE
MAXIMUM RATINGS: (TA=25°C) SYMBOL BCW67 BCW68 UNITS
Collector-Base Voltage VCBO 45 60 V
Collector-Emitter Voltage VCEO 32 45 V
Emitter-Base Voltage VEBO 5.0 V
Conitinuous Collector Current IC 800 mA
Peak Collector Current ICM 1.0 A
Continuous Base Current IB 100 mA
Peak Base Current IBM 200 mA
Power Dissipation PD 350 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 357 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
ICBO V
CB=Rated VCEO 20 nA
ICBO V
CB= Rated VCEO, TA=150°C 20 µA
IEBO V
EB=4.0V 20 nA
BVCBO I
C=10µA (BCW67) 45 V
BVCBO I
C=10µA (BCW68) 60 V
BVCEO I
C=10mA (BCW67) 32 V
BVCEO I
C=10mA (BCW68) 45 V
BVEBO I
E=10µA 5.0 V
VCE(SAT) I
C=100mA, IB=10mA 0.3 V
VCE(SAT) I
C=500mA, IB=50mA 0.7 V
VBE(SAT) I
C=100mA, IB=10mA 1.25 V
VBE(SAT) I
C=500mA, IB=50mA 2.0 V
fT V
CE=5.0V, IC=50mA, f=20MHz 200 MHz
Cc V
CB=10V, IE=0, f=1.0MHz 6.0 pF
Ce V
EB=0.5V, IC=0, f=1.0MHz 60 pF
BCW67A BCW67B BCW67C
BCW68F BCW68G BCW68H
MIN MAX MIN MAX MIN MAX
hFE V
CE=10V, IC=100µA 35 50 80
hFE V
CE=1.0V, IC=10mA 75 120 180
hFE V
CE=1.0V, IC=100mA 100 250 160 400 250 630
hFE V
CE=2.0V, IC=500mA 35 60 100
SOT-23 CASE
R2 (20-November 2009)
www.centralsemi.com
BCW67 SERIES
BCW68 SERIES
SURFACE MOUNT
PNP SILICON TRANSISTOR
SOT-23 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
DEVICE MARKING CODE
BCW67A DA
BCW67B DB
BCW67C DC
BCW68F DF
BCW68G DG
BCW68H DH
www.centralsemi.com
R2 (20-November 2009)
