SuperSOT
SOT23 NPN SILICON POWER
(SWITCHING) TRANSISTORS
ISSUE 3 - NOVEMBER 1995
FEATURES
* 625mW POWER DISSIPATION
*I
C CONT 3A
* 12A Peak Pulse Current
* Excellent HFE Characteristics Up To 12A (pulsed)
* Extremely Low Saturation Voltage E.g. 8mV Typ.
* Extremely Low Equivalent On Resistance; RCE(sat)
DEVICE TYPE COMPLEMENT PARTMARKING RCE(sat)
FMMT617 FMMT717 617 50mΩ at 3A
FMMT618 FMMT718 618 50mΩ at 2A
FMMT619 FMMT720 619 75mΩ at 2A
FMMT624 FMMT723 624 -
FMMT625 625 -
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL
FMMT
617
FMMT
618
FMMT
619
FMMT
624
FMMT
625 UNIT
Collector-Base Voltage VCBO 15 20 50 125 150 V
Collector-Emitter Voltage VCEO 15 20 50 125 150 V
Emitter-Base Voltage VEBO 55555V
Peak Pulse Current** ICM 126633A
Continuous Collector Current IC32.5211A
Base Current IB500 mA
Power Dissipation at Tamb
=25°C* Ptot 625 mW
Operating and Storage Temperature
Range
Tj:Tstg -55 to +150 °C
* Maximum power dissipation is calculated assuming that the device is mounted on a ceramic
substrate measuring 15x15x0.6mm
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for these devices
C
B
E
FMMT617 FMMT618
FMMT619 FMMT624
FMMT625
3 - 149
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 15 70 V IC
=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO 15 18 V IC
=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO 58.2 VIE=100µA
Collector Cut-Off
Current
ICBO 100 nA VCB
=10V
Emitter Cut-Off Current IEBO 100 nA VEB
=4V
Collector Emitter
Cut-Off Current
ICES 100 nA VCES=10V
Collector-Emitter
Saturation Voltage
VCE(sat) 8
70
150
14
100
200
mV
mV
mV
IC
=0.1A, IB
=10mA*
IC
=1A, IB
=10mA*
IC
=3A, IB
=50mA*
Base-Emitter
Saturation Voltage
VBE(sat) 0.9 1.0 V IC
=3A, IB
=50mA*
Base-Emitter Turn-On
Voltage
VBE(on) 0.84 1.0 V IC=3A, VCE=2V*
Static Forward Current
Transfer
Ratio
hFE 200
300
200
150
415
450
320
240
80
IC
=10mA, VCE=2V*
IC
=200mA, VCE=2V*
IC
=3A, VCE=2V*
IC
=5A, VCE=2V*
IC
=12A, VCE=2V*
Transition
Frequency
fT80 120 MHz IC
=50mA, VCE=10V
f=50MHz
Output Capacitance Cobo 30 40 pF VCB
=10V, f=1MHz
Turn-On Time t(on) 120 ns VCC
=10V, IC
=3A
IB1=IB2=50mA
Turn-Off Time t(off) 160 ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
FMMT617
100°C
-55°C
25°C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Collector Current
I
C
/I
B
=60
Collector Current
Collector Current
Collector Current
25°C
100°C
-55°C
I
C
/I
B
=60
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
450
225
25°C
100°C
-55°C
V
CE
=2V
0.2
0.0
1.0
0.8
0.6
0.4
SINGLE PULSE TEST T
amb
= 25 deg C
VCE (VOLTS)
Safe Operating Area
TYPICAL CHARACTERISTICS
100A
1mA 10mA 100mA 1A 10A
10A1A
100mA
10mA1mA 100A
1.4
1mA 10mA 100mA 1A 10A 100A
1.2
1mA 10mA 100A
100mA 1A 10A
0.4
0.3
0.2
0.1
0.0
V
CE
=2V
100°C
25°C
-55°C
1.4
0.1 1.0 10 100
0.01
0.1
1.0
10
D.C.
1s
100ms
10ms
1ms
100
µ
s
1m 100m 10
IC- Collector Current (A)
VCE(SAT) v IC
1m
1
I
C
/I
B
=100
I
C
/I
B
=60
I
C
/I
B
=10
+25 °C
10m
100m
10m 1
VCE(SAT) vs IC
VBE(SAT) vs IC
hFE vs IC
VBE(ON) vs IC
FMMT617
3 - 1513 - 150
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 15 70 V IC
=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO 15 18 V IC
=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO 58.2 VIE=100µA
Collector Cut-Off
Current
ICBO 100 nA VCB
=10V
Emitter Cut-Off Current IEBO 100 nA VEB
=4V
Collector Emitter
Cut-Off Current
ICES 100 nA VCES=10V
Collector-Emitter
Saturation Voltage
VCE(sat) 8
70
150
14
100
200
mV
mV
mV
IC
=0.1A, IB
=10mA*
IC
=1A, IB
=10mA*
IC
=3A, IB
=50mA*
Base-Emitter
Saturation Voltage
VBE(sat) 0.9 1.0 V IC
=3A, IB
=50mA*
Base-Emitter Turn-On
Voltage
VBE(on) 0.84 1.0 V IC=3A, VCE=2V*
Static Forward Current
Transfer
Ratio
hFE 200
300
200
150
415
450
320
240
80
IC
=10mA, VCE=2V*
IC
=200mA, VCE=2V*
IC
=3A, VCE=2V*
IC
=5A, VCE=2V*
IC
=12A, VCE=2V*
Transition
Frequency
fT80 120 MHz IC
=50mA, VCE=10V
f=50MHz
Output Capacitance Cobo 30 40 pF VCB
=10V, f=1MHz
Turn-On Time t(on) 120 ns VCC
=10V, IC
=3A
IB1=IB2=50mA
Turn-Off Time t(off) 160 ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
FMMT617
100°C
-55°C
25°C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Collector Current
I
C
/I
B
=60
Collector Current
Collector Current
Collector Current
25°C
100°C
-55°C
I
C
/I
B
=60
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
450
225
25°C
100°C
-55°C
V
CE
=2V
0.2
0.0
1.0
0.8
0.6
0.4
SINGLE PULSE TEST T
amb
= 25 deg C
VCE (VOLTS)
Safe Operating Area
TYPICAL CHARACTERISTICS
100A
1mA 10mA 100mA 1A 10A
10A1A
100mA
10mA1mA 100A
1.4
1mA 10mA 100mA 1A 10A 100A
1.2
1mA 10mA 100A
100mA 1A 10A
0.4
0.3
0.2
0.1
0.0
V
CE
=2V
100°C
25°C
-55°C
1.4
0.1 1.0 10 100
0.01
0.1
1.0
10
D.C.
1s
100ms
10ms
1ms
100
µ
s
1m 100m 10
IC- Collector Current (A)
VCE(SAT) v IC
1m
1
I
C
/I
B
=100
I
C
/I
B
=60
I
C
/I
B
=10
+25 °C
10m
100m
10m 1
VCE(SAT) vs IC
VBE(SAT) vs IC
hFE vs IC
VBE(ON) vs IC
FMMT617
3 - 1513 - 150
DERATING CURVE
* Reference above figures, Devices were mounted on a 15mmx15mm ceramic substrate
MAXIMUM TRANSIENT THERMAL RESISTANCE
FMMT617 FMMT624
FMMT618 FMMT625
FMMT619
THERMAL CHARACTERISTICS AND DERATING INFORMATION
FMMT717 FMMT722
FMMT718 FMMT723
FMMT720
SuperSOT Series
3 - 158
