DISCRETE SEMICONDUCTORS DATA SHEET BLF145 HF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification HF power MOS transistor FEATURES BLF145 PIN CONFIGURATION * High power gain * Low noise figure k, halfpage * Good thermal stability 1 4 * Withstands full load mismatch. d DESCRIPTION g Silicon N-channel enhancement mode vertical D-MOS transistor designed for SSB transmitter applications in the HF frequency range. The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage (VGS) groups are available on request. MBB072 2 s 3 MSB057 Fig.1 Simplified outline and symbol. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. PINNING - SOT123 PIN DESCRIPTION 1 drain 2 source 3 gate 4 source WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Th = 25 C in a common source test circuit. f (MHz) VDS (V) ID (A) PL (W) Gp (dB) D (%) (note 1) d3 (dB) SSB, class-A 28 28 1.3 8 (PEP) > 24 - < -40 SSB, class-AB 28 28 - 30 (PEP) typ. 20 typ. 40 typ. -35 MODE OF OPERATION Note 1. 2-tone efficiency. September 1992 2 Philips Semiconductors Product specification HF power MOS transistor BLF145 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSS drain-source voltage - 65 V VGSS gate-source voltage - 20 V ID DC drain current - 6 A Ptot total power dissipation - 68 W Tstg storage temperature -65 150 C Tj junction temperature - 200 C up to Tmb = 25 C THERMAL RESISTANCE SYMBOL PARAMETER THERMAL RESISTANCE Rth j-mb thermal resistance from junction to mounting base 2.6 K/W Rth mb-h thermal resistance from mounting base to heatsink 0.3 K/W MRA901 10 MGP035 100 handbook, halfpage handbook, halfpage Ptot ID (A) (W) (1) (2) 80 (1) 1 60 (2) 40 10-1 1 10 VDS (V) 20 102 0 80 120 Th (C) 160 (1) Short-time operation during mismatch. (2) Continuous operation. (1) Current is this area may be limited by RDS(on). (2) Tmb = 25 C. Fig.2 DC SOAR. September 1992 40 Fig.3 Power/temperature derating curves. 3 Philips Semiconductors Product specification HF power MOS transistor BLF145 CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS V(BR)DSS drain-source breakdown voltage MIN. TYP. MAX. UNIT ID = 10 mA; VGS = 0 65 - - V IDSS drain-source leakage current VGS = 0; VDS = 28 V - - 2 mA IGSS gate-source leakage current VGS = 20 V; VDS = 0 - - 1 A VGS(th) gate-source threshold voltage ID = 10 mA; VDS = 10 V 2 - 4.5 V VGS gate-source voltage difference of matched devices ID = 10 mA; VDS = 10 V - - 100 mV gfs forward transconductance ID = 1.5 A; VDS = 10 V 1.2 - - S RDS(on) drain-source on-state resistance ID = 1.5 A; VGS = 10 V - 0.4 0.75 IDSX on-state drain current VGS = 10 V; VDS = 10 V - 10 - A Cis input capacitance VGS = 0; VDS = 28 V; f = 1 MHz - 125 - pF Cos output capacitance VGS = 0; VDS = 28 V; f = 1 MHz - 75 - pF Crs feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz - 7 - pF MGP036 4 MGP037 12 handbook, halfpage handbook, halfpage T.C. (mV/K) Tj = 25 C ID (A) 2 125 C 8 0 -2 4 -4 -6 10 102 103 ID (mA) 0 104 0 5 VDS = 10 V. VDS = 10 V. Fig.4 Fig.5 Temperature coefficient of gate-source voltage as a function of drain current, typical values. September 1992 4 10 15 VGS (V) 20 Drain current as a function of gate-source voltage, typical values. Philips Semiconductors Product specification HF power MOS transistor BLF145 MGP038 0.8 MGP039 240 handbook, halfpage handbook, halfpage C (pF) RDS(on) () 0.6 180 0.4 120 Cis Cos 0.2 60 0 0 0 40 80 120 0 160 10 ID = 1.5 A; VGS = 10 V. Fig.6 Fig.7 MRA900 20 handbook, halfpage Crs (pF) 10 0 10 20 VDS (V) 30 VGS = 0; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage, typical values. September 1992 30 40 VGS = 0; f = 1 MHz. Drain-source on-state resistance as a function of junction temperature, typical values. 0 20 VDS (V) Tj (C) 5 Input and output capacitance as functions of drain-source voltage, typical values. Philips Semiconductors Product specification HF power MOS transistor BLF145 APPLICATION INFORMATION FOR CLASS-A OPERATION Th = 25 C; Rth mb-h = 0.3 K/W; R1 = 26 ; unless otherwise specified. RF performance in SSB operation in a common source class-A circuit. MODE OF OPERATION f VDS (MHz) (V) SSB, class-A 28 28 ID (A) PL (W) GP (dB) d3 (dB) (note 1) d5 (dB) (note 1) 1.3 8 (PEP) > 24 typ. 27 > -40 typ. -43 < -40 typ. -70 ZL () 18.4 + j5.2 Note 1. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are referred to the according level of either the equal amplified tones. Related to the according peak envelope power these figures should be decreased by 6 dB. MGP040 30 MGP041 -20 handbook, halfpage handbook, halfpage d3 (dB) Gp (dB) -30 28 -40 26 -50 -60 24 0 10 20 30 PL (W) PEP 0 10 20 PL (W) PEP 30 Class-A operation; VDS = 28 V; ID = 1.3 A; Rth mb-h = 0.3 K/W; f = 28 MHz. solid line: Th = 25 C. dotted line: Th = 70 C. Class-A operation; VDS = 28 V; ID = 1.3 A; Rth mb-h = 0.3 K/W; f = 28 MHz. solid line: Th = 25 C. dotted line: Th = 70 C. Fig.9 Fig.10 Third order intermodulation distortion as a function of load power, typical values. Power gain as a function of load power, typical values. September 1992 6 Philips Semiconductors Product specification HF power MOS transistor BLF145 handbook, full pagewidth C5 C1 C9 L5 output 50 L2 L1 input 50 L3 D.U.T. C2 C10 C6 R1 C3 L4 C8 C4 C7 R2 +VD +VG C11 C12 L6 MGP042 f = 28 MHz. Fig.11 Test circuit for class-A operation. List of components (class-A test circuit) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C3, C8, C9 film dielectric trimmer 7 to 100 pF C2, C10 multilayer ceramic chip capacitor (note 1) 39 pF 2222 809 07015 C4, C7 multilayer ceramic chip capacitor 100 nF C5, C6 multilayer ceramic chip capacitor (note 1) 27 pF C11 multilayer ceramic chip capacitor 3 x 100 nF 2222 852 47104 C12 electrolytic capacitor 2.2 F, 63 V 2222 030 38228 L1 12 turns enamelled 0.5 mm copper wire 307 nH length 8 mm; int. dia. 4 mm L2, L3 stripline (note 2) 30 length 15 x 6 mm L4 14 turns enamelled 1 mm copper wire 1039 nH length 14 mm; int. dia. 9 mm L5 9 turns enamelled 1 mm copper wire 305 nH L6 grade 3B Ferroxcube wideband HF choke R1 0.25 W metal film resistor 26 R2 0.25 W metal film resistor 10 2222 852 47104 length 10 mm; int. dia. 6 mm 4312 020 36640 Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (r = 4.5), thickness 116 mm. September 1992 7 Philips Semiconductors Product specification HF power MOS transistor BLF145 APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 C; Rth mb-h = 0.3 K/W; R1 = 34 ; unless otherwise specified. RF performance in SSB operation in a common source class-AB circuit. MODE OF OPERATION f VDS (MHz) (V) SSB, class-AB 28 28 IDQ (A) PL (W) Gp (dB) D (%) d3 (dB) (note 1) d5 (dB) (note 1) ZL () 0.25 30 (PEP) typ. 20 typ. 40 typ. -35 typ. -40 8.9 + j1.0 Note 1. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are referred to the according level of either the equal amplified tones. Related to the according peak envelope power these figures should be decreased by 6 dB. Ruggedness in class-AB operation The BLF145 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases at PL = 30 W single tone under the following conditions: VDS = 28 V; f = 28 MHz; Th = 25 C; Rth mb-h = 0.3 K/W at rated load power. MGP043 22 MGP044 60 handbook, halfpage handbook, halfpage D (%) Gp (dB) 20 40 18 20 16 0 20 40 PL (W) 0 60 0 20 40 PL (W) 60 Class-AB operation; VDS = 28 V; IDQ = 0.25 A; Rth mb-h = 0.3 K/W; f = 28 MHz. solid line: Th = 25 C. dotted line: Th = 70 C. Class-AB operation; VDS = 28 V; IDQ = 0.25 A; Rth mb-h = 0.3 K/W; f = 28 MHz. solid line: Th = 25 C. dotted line: Th = 70 C. Fig.12 Power gain as a function of load power, typical values. Fig.13 Two tone efficiency as a function of load power, typical values. September 1992 8 Philips Semiconductors Product specification HF power MOS transistor BLF145 handbook, full pagewidth C7 C9 C4 L3 D.U.T. C1 C10 C5 C2 output 50 L2 L1 input 50 L5 R1 L4 C8 C3 C6 R2 +VD +VG C11 C12 L6 MGP045 f = 28 MHz. Fig.14 Test circuit for class-AB operation. List of components (class-AB test circuit) COMPONENT DESCRIPTION C1, C2 film dielectric trimmer C3, C6 C4, C5 VALUE DIMENSIONS CATALOGUE NO. 5 to 60 pF 2222 809 07011 multilayer ceramic chip capacitor 100 nF 2222 852 47104 multilayer ceramic chip capacitor (note 1) 27 pF C7, C10 multilayer ceramic chip capacitor (note 1) 39 pF C8, C9 film dielectric trimmer 7 to 100 pF 2222 809 07015 C11 multilayer ceramic chip capacitor 3 x 100 nF 2222 852 47104 C12 electrolytic capacitor 2.2 F, 63 V 2222 030 38228 L1 13 turns enamelled 0.5 mm copper wire 415 nH length 10 mm; int. dia. 5 mm L2, L3 stripline (note 2) 30 length 15 x 6 mm L4 10 turns enamelled 1 mm copper wire 390 nH length 13 mm; int. dia. 7 mm L5 9 turns enamelled 1 mm copper wire 245 nH length 10 mm; int. dia. 5 mm L6 grade 3B Ferroxcube wideband HF choke R1 0.5 W metal film resistor 34 R2 0.25 W metal film resistor 10 4312 020 36640 Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (r = 4.5), thickness 116 mm. September 1992 9 Philips Semiconductors Product specification HF power MOS transistor BLF145 MGP046 -20 MGP047 -20 handbook, halfpage handbook, halfpage d3 (dB) d5 (dB) -30 -30 -40 -40 -50 -50 0 20 40 PL (W) 60 0 20 40 PL (W) 60 Class-AB operation; VDS = 28 V; IDQ = 0.25 A; Rth mb-h = 0.3 K/W; f = 28 MHz. solid line: Th = 25 C. dotted line: Th = 70 C. Class-AB operation; VDS = 28 V; IDQ = 0.25 A; Rth mb-h = 0.3 K/W; f = 28 MHz. solid line: Th = 25 C. dotted line: Th = 70 C. Fig.15 Third order intermodulation distortion as a function of load power, typical values. Fig.16 Fifth order intermodulation distortion as a function of load power, typical values. Table 1 Input impedance as a function of frequency Class-AB operation; VDS = 28 V; IDQ = 0.25 A; PL = 30 W; Th = 25 C; Rth mb-h = 0.3 K/W; R1 = 34 ; ZL = 8.9 + j1 . MGP048 21 handbook, halfpage Gp (dB) f (MHz) 20 19 0 6 12 18 24 30 f (MHz) Class-AB operation; VDS = 28 V; IDQ = 0.25 A; PL = 30 W; Th = 25 C; Rth mb-h = 0.3 K/W; R1 = 34 ; ZL = 8.9 + j1 . Fig.17 Power gain as a function of frequency, typical values. September 1992 10 Zi () 1.5 32.9 - j2.2 3.0 32.4 - j4.3 6.0 30.7 - j8.1 10 27.4 - j11.9 15 32.9 - j14.6 20 18.5 - j15.4 25 15.1 - j15.3 30 12.5 - j14.6 Philips Semiconductors Product specification HF power MOS transistor BLF145 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads SOT123A D A F q C B U1 w2 M C c H b L 4 3 A p U3 U2 w1 M A B 1 2 H Q 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 F H L p Q q U1 U2 U3 w1 w2 mm 7.47 6.37 5.82 5.56 0.18 0.10 9.73 9.47 9.63 9.42 2.72 2.31 20.71 19.93 5.61 5.16 3.33 3.04 4.63 4.11 18.42 25.15 24.38 6.61 6.09 9.78 9.39 0.51 1.02 inches 0.294 0.251 0.229 0.007 0.219 0.004 0.182 0.725 0.162 0.99 0.96 0.26 0.24 0.385 0.370 0.02 0.04 OUTLINE VERSION 0.383 0.397 0.107 0.815 0.373 0.371 0.091 0.785 0.221 0.131 0.203 0.120 REFERENCES IEC JEDEC EIAJ SOT123A September 1992 45 EUROPEAN PROJECTION ISSUE DATE 97-06-28 11 Philips Semiconductors Product specification HF power MOS transistor BLF145 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1992 12