DATA SH EET
Product specification September 1992
DISCRETE SEMICONDUCTORS
BLF145
HF power MOS transistor
September 1992 2
Philips Semiconductors Product specification
HF power MOS transistor BLF145
FEATURES
•High power gain
•Low noise figure
•Good thermal stability
•Withstands full load mismatch.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for SSB transmitter
applications in the HF frequency
range. The transistor is encapsulated
in a 4-lead, SOT123 flange envelope,
with a ceramic cap. All leads are
isolated from the flange. Matched
gate-source voltage (VGS) groups are
available on request.
PINNING - SOT123
PIN DESCRIPTION
1 drain
2 source
3 gate
4 source
PIN CONFIGURATION
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
Fig.1 Simplified outline and symbol.
k
, halfpage
1
23
4
MSB057
s
d
g
MBB072
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
Note
1. 2-tone efficiency.
MODE OF OPERATION f
(MHz) VDS
(V) ID
(A) PL
(W) Gp
(dB)
ηD
(%)
(note 1)
d3
(dB)
SSB, class-A 28 28 1.3 8 (PEP) >24 −<−40
SSB, class-AB 28 28 −30 (PEP) typ. 20 typ. 40 typ. −35
September 1992 3
Philips Semiconductors Product specification
HF power MOS transistor BLF145
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDSS drain-source voltage −65 V
±VGSS gate-source voltage −20 V
IDDC drain current −6A
P
tot total power dissipation up to Tmb = 25 °C−68 W
Tstg storage temperature −65 150 °C
Tjjunction temperature −200 °C
SYMBOL PARAMETER THERMAL RESISTANCE
Rth j-mb thermal resistance from junction to mounting base 2.6 K/W
Rth mb-h thermal resistance from mounting base to heatsink 0.3 K/W
Fig.2 DC SOAR.
(1) Current is this area may be limited by RDS(on).
(2) Tmb =25°C.
handbook, halfpage
10−1
1
10
110
I
D
(A)
VDS (V) 102
MRA901
(1) (2)
Fig.3 Power/temperature derating curves.
(1) Short-time operation during mismatch.
(2) Continuous operation.
handbook, halfpage
0
(1)
40 80 160
100
80
40
20
60
120
MGP035
Ptot
(W)
Th (°C)
(2)
September 1992 4
Philips Semiconductors Product specification
HF power MOS transistor BLF145
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS drain-source breakdown voltage ID = 10 mA; VGS = 0 65 −− V
I
DSS drain-source leakage current VGS = 0; VDS = 28 V −−2mA
I
GSS gate-source leakage current ±VGS = 20 V; VDS = 0 −−1µA
V
GS(th) gate-source threshold voltage ID = 10 mA; VDS = 10 V 2 −4.5 V
∆VGS gate-source voltage difference of
matched devices ID = 10 mA; VDS = 10 V −−100 mV
gfs forward transconductance ID = 1.5 A; VDS = 10 V 1.2 −− S
R
DS(on) drain-source on-state resistance ID = 1.5 A; VGS = 10 V −0.4 0.75 Ω
IDSX on-state drain current VGS = 10 V; VDS = 10 V −10 −A
Cis input capacitance VGS = 0; VDS = 28 V; f = 1 MHz −125 −pF
Cos output capacitance VGS = 0; VDS = 28 V; f = 1 MHz −75 −pF
Crs feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz −7−pF
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
VDS =10V.
handbook, halfpage
4
−6
MGP036
102103104
10
−4
−2
0
2
T.C.
(mV/K)
ID (mA)
Fig.5 Drain current as a function of gate-source
voltage, typical values.
VDS =10V.
handbook, halfpage
05
I
D
(A)
10 20
12
0
4
8
15 VGS (V)
MGP037
125 °C
Tj = 25 °C
September 1992 5
Philips Semiconductors Product specification
HF power MOS transistor BLF145
Fig.6 Drain-source on-state resistance as a
function of junction temperature, typical
values.
ID= 1.5 A;
VGS =10V.
handbook, halfpage
040
R
DS(on)
(Ω)
Tj (°C)
80 160
0.8
0.6
0.2
0
0.4
120
MGP038
Fig.7 Input and output capacitance as functions
of drain-source voltage, typical values.
VGS = 0; f = 1 MHz.
handbook, halfpage
01020 40
240
0
60
180
120
30
MGP039
C
(pF)
VDS (V)
Cos
Cis
Fig.8 Feedback capacitance as a function of
drain-source voltage, typical values.
VGS = 0; f = 1 MHz.
handbook, halfpage
0
10
20
010
C
rs
(pF)
20 VDS (V) 30
MRA900
September 1992 6
Philips Semiconductors Product specification
HF power MOS transistor BLF145
APPLICATION INFORMATION FOR CLASS-A OPERATION
Th = 25 °C; Rth mb-h = 0.3 K/W; R1 = 26 Ω; unless otherwise specified.
RF performance in SSB operation in a common source class-A circuit.
Note
1. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are
referred to the according level of either the equal amplified tones. Related to the according peak envelope power
these figures should be decreased by 6 dB.
MODE OF
OPERATION f
(MHz) VDS
(V) ID
(A) PL
(W) GP
(dB)
d3
(dB)
(note 1)
d5
(dB)
(note 1)
ZL
(Ω)
SSB, class-A 28 28 1.3 8 (PEP) >24
typ. 27 >−40
typ. −43 <−40
typ. −70 18.4 +j5.2
Fig.9 Power gain as a function of load power,
typical values.
Class-A operation; VDS = 28 V; ID= 1.3 A;
Rth mb-h = 0.3 K/W; f = 28 MHz.
solid line: Th=25°C.
dotted line: Th=70°C.
handbook, halfpage
0
30
28
26
24 10 20 30
MGP040
Gp
(dB)
PL (W) PEP
Fig.10 Third order intermodulation distortion as a
function of load power, typical values.
Class-A operation; VDS = 28 V; ID= 1.3 A;
Rth mb-h = 0.3 K/W; f = 28 MHz.
solid line: Th=25°C.
dotted line: Th=70°C.
handbook, halfpage
0102030
−20
−30
−50
−60
−40
MGP041
d3
(dB)
PL (W) PEP
September 1992 7
Philips Semiconductors Product specification
HF power MOS transistor BLF145
List of components (class-A test circuit)
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 4.5),
thickness 1⁄16 mm.
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C3, C8, C9 film dielectric trimmer 7 to 100 pF 2222 809 07015
C2, C10 multilayer ceramic chip capacitor
(note 1) 39 pF
C4, C7 multilayer ceramic chip capacitor 100 nF 2222 852 47104
C5, C6 multilayer ceramic chip capacitor
(note 1) 27 pF
C11 multilayer ceramic chip capacitor 3 ×100 nF 2222 852 47104
C12 electrolytic capacitor 2.2 µF, 63 V 2222 030 38228
L1 12 turns enamelled 0.5 mm copper
wire 307 nH length 8 mm;
int. dia. 4 mm
L2, L3 stripline (note 2) 30 Ωlength 15 ×6mm
L4 14 turns enamelled 1 mm copper
wire 1039 nH length 14 mm;
int. dia. 9 mm
L5 9 turns enamelled 1 mm copper wire 305 nH length 10 mm;
int. dia. 6 mm
L6 grade 3B Ferroxcube wideband HF
choke 4312 020 36640
R1 0.25 W metal film resistor 26 Ω
R2 0.25 W metal film resistor 10 Ω
Fig.11 Test circuit for class-A operation.
f = 28 MHz.
handbook, full pagewidth
MGP042
input
50 Ω
C1
C4 C7
L1 L2 D.U.T. L3 L5
+VG
L4
R1
C3
C2
C8
C11
C6
C5
C12
C10
+VD
C9
L6
R2
output
50 Ω
September 1992 8
Philips Semiconductors Product specification
HF power MOS transistor BLF145
APPLICATION INFORMATION FOR CLASS-B OPERATION
Th = 25 °C; Rth mb-h = 0.3 K/W; R1 = 34 Ω; unless otherwise specified.
RF performance in SSB operation in a common source class-AB circuit.
Note
1. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are
referred to the according level of either the equal amplified tones. Related to the according peak envelope power
these figures should be decreased by 6 dB.
MODE OF
OPERATION f
(MHz) VDS
(V) IDQ
(A) PL
(W) Gp
(dB) ηD
(%)
d3
(dB)
(note 1)
d5
(dB)
(note 1)
ZL
(Ω)
SSB, class-AB 28 28 0.25 30 (PEP) typ. 20 typ. 40 typ. −35 typ. −40 8.9 +j1.0
Ruggedness in class-AB operation
The BLF145 is capable of withstanding a load mismatch
corresponding to VSWR = 50 through all phases at
PL = 30 W single tone under the following conditions:
VDS = 28 V; f = 28 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W at
rated load power.
Fig.12 Power gain as a function of load power,
typical values.
Class-AB operation; VDS = 28 V; IDQ = 0.25 A;
Rth mb-h = 0.3 K/W; f = 28 MHz.
solid line: Th=25°C.
dotted line: Th=70°C.
handbook, halfpage
0
22
20
18
16 20 40 60
MGP043
Gp
(dB)
PL (W)
Fig.13 Two tone efficiency as a function of load
power, typical values.
Class-AB operation; VDS = 28 V; IDQ = 0.25 A;
Rth mb-h = 0.3 K/W; f = 28 MHz.
solid line: Th=25°C.
dotted line: Th=70°C.
handbook, halfpage
0
60
40
20
020 40 60
MGP044
ηD
(%)
PL (W)
September 1992 9
Philips Semiconductors Product specification
HF power MOS transistor BLF145
List of components (class-AB test circuit)
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 4.5),
thickness 1⁄16 mm.
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C2 film dielectric trimmer 5 to 60 pF 2222 809 07011
C3, C6 multilayer ceramic chip capacitor 100 nF 2222 852 47104
C4, C5 multilayer ceramic chip capacitor
(note 1) 27 pF
C7, C10 multilayer ceramic chip capacitor
(note 1) 39 pF
C8, C9 film dielectric trimmer 7 to 100 pF 2222 809 07015
C11 multilayer ceramic chip capacitor 3 ×100 nF 2222 852 47104
C12 electrolytic capacitor 2.2 µF, 63 V 2222 030 38228
L1 13 turns enamelled 0.5 mm copper
wire 415 nH length 10 mm;
int. dia. 5 mm
L2, L3 stripline (note 2) 30 Ωlength 15 ×6mm
L4 10 turns enamelled 1 mm copper
wire 390 nH length 13 mm;
int. dia. 7 mm
L5 9 turns enamelled 1 mm copper wire 245 nH length 10 mm;
int. dia. 5 mm
L6 grade 3B Ferroxcube wideband HF
choke 4312 020 36640
R1 0.5 W metal film resistor 34 Ω
R2 0.25 W metal film resistor 10 Ω
Fig.14 Test circuit for class-AB operation.
f = 28 MHz.
handbook, full pagewidth
MGP045
input
50 Ω
C1
C3 C6
L1 L2 D.U.T. L3 L5
+VG
L4
R1
C2 C8
C11
C5
C4 C7
C12
C10
+VD
C9
L6
R2
output
50 Ω
September 1992 10
Philips Semiconductors Product specification
HF power MOS transistor BLF145
Fig.15 Third order intermodulation distortion as a
function of load power, typical values.
Class-AB operation; VDS = 28 V; IDQ = 0.25 A;
Rth mb-h = 0.3 K/W; f = 28 MHz.
solid line: Th=25°C.
dotted line: Th=70°C.
handbook, halfpage
0
−20
−30
−40
−50 20 40 60
MGP046
d3
(dB)
PL (W)
Fig.16 Fifth order intermodulation distortion as a
function of load power, typical values.
Class-AB operation; VDS = 28 V; IDQ = 0.25 A;
Rth mb-h = 0.3 K/W; f = 28 MHz.
solid line: Th=25°C.
dotted line: Th=70°C.
handbook, halfpage
0
−20
−30
−40
−50 20 40 60
MGP047
d5
(dB)
PL (W)
Fig.17 Power gain as a function of frequency,
typical values.
Class-AB operation; VDS = 28 V; IDQ = 0.25 A;
PL= 30 W; Th=25°C; Rth mb-h = 0.3 K/W;
R1=34Ω;Z
L= 8.9 +j1 Ω.
handbook, halfpage
030
21
19
20
MGP048
6 121824
G
p
(dB)
f (MHz)
Table 1
Input impedance as a function of frequency
Class-AB operation; VDS = 28 V; IDQ = 0.25 A;
PL = 30 W; Th = 25 °C;
Rth mb-h = 0.3 K/W; R1 = 34 Ω;Z
L
= 8.9 + j1 Ω.
f
(MHz) Zi
(Ω)
1.5 32.9 − j2.2
3.0 32.4 − j4.3
6.0 30.7 − j8.1
10 27.4 − j11.9
15 32.9 − j14.6
20 18.5 − j15.4
25 15.1 − j15.3
30 12.5 − j14.6
September 1992 11
Philips Semiconductors Product specification
HF power MOS transistor BLF145
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT123A 97-06-28
0 5 10 mm
scale
Flanged ceramic package; 2 mounting holes; 4 leads SOT123A
1
2
43
U
3
U
2
H
HL
b
Q
D
U
1
q
A
F
c
p
M
w
2
B
C
C
A
w
1
M
AB
α
UNIT A
mm
Db
5.82
5.56 0.18
0.10 9.73
9.47 9.63
9.42 20.71
19.93 3.33
3.04 6.61
6.09
7.47
6.37
cD1U2U3
9.78
9.39 1.020.51
w2
w1
45°
αL
5.61
5.16
U1
25.15
24.38
Q
4.63
4.11
q
18.42
F
2.72
2.31
inches 0.229
0.219 0.007
0.004 0.383
0.373 0.397
0.371 0.815
0.785 0.131
0.120 0.26
0.24
0.294
0.251 0.385
0.370 0.040.02
0.221
0.203 0.99
0.96
0.182
0.162 0.725
0.107
0.091
pH
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
September 1992 12
Philips Semiconductors Product specification
HF power MOS transistor BLF145
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
