BZT52H-C3V0,115 - NXP

1. Product profile

1.1 General description

General-purpose Ze ner diodes in a SOD123F small and flat lead Surface-Mounted

Device (SMD) plastic package.

1.2 Features and benefits

1.3 Applications

General regulation functions

1.4 Quick reference data

[1] Pulse test: tp≤300 μs; δ≤0.02.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

2. Pinning information

[1] The marking bar indicates the cathode.

BZT52H series

Single Zener diodes in a SOD123F package

Rev. 3 — 7 December 2010 Product data sheet

Total power dissipation: ≤830 mW Low differential resistance

Wide working voltage range: nominal

2.4 V to 75 V (E24 range)

AEC-Q101 qualified

Small plastic package suitable for

surface-mounted design

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VFforward voltage IF=10mA [1] --0.9V

Ptot total power dissipation Tamb ≤25 °C[2] --375mW

[3] --830mW

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1 cathode [1]

2 anode 21

006aaa15

Product data sheet Rev. 3 — 7 December 2010 2 of 13

NXP Semiconductors BZT52H series

Single Zener diodes in a SOD123F pack age

3. Ordering information

[1] The series consists of 74 types with nominal working voltages from 2.4 V to 75 V.

4. Marking

Table 3. Ordering information

Type number Package

Name Description Version

BZT52H-B2V4 to

BZT52H-C75[1] - plastic surface-mounted package; 2 leads SOD123F

Table 4. Marking codes

Type number Marking

code Type number Marking

code

BZT52H-B2V4 DC BZT52H-B15 DX BZT52H-C2V4 B3 BZT52H-C15 BN

BZT52H-B2V7 DD BZT52H-B16 DY BZT52H-C2V7 B4 BZT52H-C16 BP

BZT52H-B3V0 DE BZT52H-B18 DZ BZT52H-C3V0 B5 BZT52H-C18 BQ

BZT52H-B3V3 DF BZT52H-B20 E1 BZT52H-C3V3 B6 BZT52H-C20 BR

BZT52H-B3V6 DG BZT52H-B22 E2 BZT52H-C3V6 B7 BZT52H-C22 BS

BZT52H-B3V9 DH BZT52H-B24 E3 BZT52H-C3V9 B8 BZT52H-C24 BT

BZT52H-B4V3 DJ BZT52H-B27 E4 BZT52H-C4V3 B9 BZT52H-C27 BU

BZT52H-B4V7 DK BZT52H-B30 E5 BZT52H-C4V7 BA BZT52H-C30 BV

BZT52H-B5V1 DL BZT52H-B33 E6 BZT52H-C5V1 BB BZT52H-C33 BW

BZT52H-B5V6 DM BZT52H-B36 E7 BZT52H-C5V6 BC BZT52H-C36 BX

BZT52H-B6V2 DN BZT52H-B39 E8 BZT52H-C6V2 BD BZT52H-C39 BY

BZT52H-B6V8 DP BZT52H-B43 E9 BZT52H-C6V8 BE BZT52H-C43 BZ

BZT52H-B7V5 DQ BZT52H-B47 EA BZT52H-C7V5 BF BZT52H-C47 C1

BZT52H-B8V2 DR BZT52H-B51 EB BZT52H-C8V2 BG BZT52H-C51 C2

BZT52H-B9V1 DS BZT52H-B56 EC BZT52H-C9V1 BH BZT52H-C56 C3

BZT52H-B10 DT BZT52H-B62 ED BZT52H-C10 BJ BZT52H-C62 C4

BZT52H-B11 DU BZT52H-B68 EE BZT52H-C11 BK BZT52H-C68 C5

BZT52H-B12 DV BZT52H-B75 EF BZT52H-C12 BL BZT52H-C75 C6

BZT52H-B13 DW - - BZT52H-C13 BM - -

Product data sheet Rev. 3 — 7 December 2010 3 of 13

NXP Semiconductors BZT52H series

Single Zener diodes in a SOD123F pack age

5. Limiting values

[1] tp=100μs; square wave; Tj=25°C prior to surge.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

[3] Soldering point of cathode tab.

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

IFforward current - 250 mA

IZSM non-repetitive peak

reverse current - see

Table 8, 9

and 10

PZSM non-repetitive peak

reverse power dissipation [1] -40W

Ptot total power dissipation Tamb ≤25 °C[2] - 375 mW

[3] - 830 mW

Tjjunction temperature - 150 °C

Tamb ambient temperature −65 +150 °C

Tstg storage temperature −65 +150 °C

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance from

junction to ambient in free air [1] --330K/W

[2] --150K/W

Rth(j-sp) thermal resistance from

junction to solder point [3] --70K/W

Product data sheet Rev. 3 — 7 December 2010 4 of 13

NXP Semiconductors BZT52H series

Single Zener diodes in a SOD123F pack age

7. Characteristics

[1] Pulse test: tp≤300 μs; δ≤0.02.

Table 7. Characteristics

Tj=25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

VFforward voltage IF=10mA [1] --0.9V

Table 8. Characteristics per type; BZT52H-B2V4 to BZT52H-C2 4

Tj=25

C unless otherwise specified.

BZT52H

-xxx Sel Working

voltage

VZ(V);

IZ=5mA

Maximum differential

resistance rdif (Ω)Reverse

current IR(μA) Temperature

coefficient

SZ(mV/K);

IZ=5mA

Diode

capacitance

Cd(pF)[1]

Non-repetitive

peak reverse

current

IZSM (A)[2]

Min Max IZ=1mA IZ=5mA Max VR(V) Min Max Max Max

2V4 B 2.35 2.45 400 85 50 1 −3.5 0.0 450 6.0

C2.22.6

2V7 B 2.65 2.75 500 83 20 1 −3.5 0.0 450 6.0

C2.52.9

3V0 B 2.94 3.06 500 95 10 1 −3.5 0.0 450 6.0

C2.83.2

3V3 B 3.23 3.37 500 95 5 1 −3.5 0.0 450 6.0

C3.13.5

3V6 B 3.53 3.67 500 95 5 1 −3.5 0.0 450 6.0

C3.43.8

3V9 B 3.82 3.98 500 95 3 1 −3.5 0.0 450 6.0

C3.74.1

4V3 B 4.21 4.39 500 95 3 1 −3.5 0.0 450 6.0

C4.04.6

4V7 B 4.61 4.79 500 78 3 2 −3.5 0.2 300 6.0

C4.45.0

5V1 B 5.0 5.2 480 60 2 2 −2.7 1.2 300 6.0

C4.85.4

5V6 B 5.49 5.71 400 40 1 2 −2.0 2.5 300 6.0

C5.26.0

6V2 B 6.08 6.32 150 10 3 4 0.4 3.7 200 6.0

C5.86.6

6V8 B 6.66 6.94 80 8 2 4 1.2 4.5 200 6.0

C6.47.2

7V5 B 7.35 7.65 80 10 1 5 2.5 5.3 150 4.0

C7.07.9

8V2 B 8.04 8.36 80 10 0.7 5 3.2 6.2 150 4.0

C7.78.7

Product data sheet Rev. 3 — 7 December 2010 5 of 13

NXP Semiconductors BZT52H series

Single Zener diodes in a SOD123F pack age

[1] f = 1 MHz; VR=0V.

[2] tp= 100 μs; Tamb =25°C.

9V1 B 8.92 9.28 100 10 0.5 6 3.8 7.0 150 3.0

C8.59.6

10 B 9.8 10.2 70 10 0.2 7 4.5 8.0 90 3.0

C 9.4 10.6

11 B 10.8 11.2 70 10 0.1 8 5.4 9.0 85 2.5

C 10.4 11.6

12 B 11.8 12.2 90 10 0.1 8 6.0 10.0 85 2.5

C 11.4 12.7

13 B 12.7 13.3 110 10 0.1 8 7.0 11.0 80 2.5

C 12.4 14.1

15 B 14.7 15.3 110 15 0.05 10.5 9.2 13.0 75 2.0

C 13.8 15.6

16 B 15.7 16.3 170 20 0.05 11.2 10.4 14.0 75 1.5

C 15.3 17.1

18 B 17.6 18.4 170 20 0.05 12.6 12.4 16.0 70 1.5

C 16.8 19.1

20 B 19.6 20.4 220 20 0.05 14 14.4 18.0 60 1.5

C 18.8 21.2

22 B 21.6 22.4 220 25 0.05 15.4 16.4 20.0 60 1.25

C 20.8 23.3

24 B 23.5 24.5 220 30 0.05 16.8 18.4 22.0 55 1.25

C 22.8 25.6

Table 8. Characteristics per type; BZT52H-B2V4 to BZT52H-C2 4 …continued

Tj=25

C unless otherwise specified.

BZT52H

-xxx Sel Working

voltage

VZ(V);

IZ=5mA

Maximum differential

resistance rdif (Ω)Reverse

current IR(μA) Temperature

coefficient

SZ(mV/K);

IZ=5mA

Diode

capacitance

Cd(pF)[1]

Non-repetitive

peak reverse

current

IZSM (A)[2]

Min Max IZ=1mA IZ=5mA Max VR(V) Min Max Max Max

Product data sheet Rev. 3 — 7 December 2010 6 of 13

NXP Semiconductors BZT52H series

Single Zener diodes in a SOD123F package

[1] f = 1 MHz; VR=0V.

[2] tp= 100 μs; Tamb =25°C.

[1] f = 1 MHz; VR=0V.

[2] tp= 100 μs; Tamb =25°C.

Table 9. Characteristics per type; BZT52H-B27 to BZT52H-C51

Tj=25

C unless otherwise specified.

BZT52H

-xxx Sel Working

voltage

VZ(V);

IZ=2mA

Maximum differential

resistance rdif (Ω)Reverse

current IR(μA) Temperature

coefficient

SZ(mV/K);

IZ=5mA

Diode

capacitance

Cd(pF)[1]

Non-repetitive

peak reverse

current

IZSM (A)[2]

Min Max IZ=1mA IZ=5mA Max VR(V) Min Max Max Max

27 B 26.5 27.5 250 40 0.05 18.9 21.4 25.3 50 1.0

C 25.1 28.9

30 B 29.4 30.6 250 40 0.05 21 24.4 29.4 50 1.0

C 28.0 32.0

33 B 32.3 33.7 250 40 0.05 23.1 27.4 33.4 45 0.9

C 31.0 35.0

36 B 35.3 36.7 250 60 0.05 25.2 30.4 37.4 45 0.8

C 34.0 38.0

39 B 38.2 39.8 300 75 0.05 27.3 33.4 41.2 45 0.7

C 37.0 41.0

43 B 42.1 43.9 325 80 0.05 30.1 37.6 46.6 40 0.6

C 40.0 46.0

47 B 46.1 47.9 325 90 0.05 32.9 42.0 51.8 40 0.5

C 44.0 50.0

51 B 50.0 52.0 350 100 0.05 35.7 46.6 57.2 40 0.4

C 48.0 54.0

Table 10 . Characteristics per type; BZT52H-B56 to BZT52H-C75

Tj=25

C unless otherwise specified.

BZT52H

-xxx Sel Working

voltage

VZ(V);

IZ=2mA

Maximum differential

resistance rdif (Ω)Reverse

current IR(μA) Temperature

coefficient

SZ(mV/K);

IZ=5mA

Diode

capacitance

Cd(pF)[1]

Non-repetitive

peak reverse

current

IZSM (A)[2]

Min Max IZ=0.5mA IZ=2mA Max VR(V) Min Max Max Max

56 B 54.9 57.1 375 120 0.05 39.2 52.2 63.8 40 0.3

C 52.0 60.0

62 B 60.8 63.2 400 140 0.05 43.4 58.8 71.6 35 0.3

C 58.0 66.0

68 B 66.6 69.4 400 160 0.05 47.6 65.6 79.8 35 0.25

C 64.0 72.0

75 B 73.5 76.5 400 175 0.05 52.5 73.4 88.6 35 0.20

C 70.0 79.0

Product data sheet Rev. 3 — 7 December 2010 7 of 13

NXP Semiconductors BZT52H series

Single Zener diodes in a SOD123F package

(1) Tj=25°C (prior to surge)

(2) Tj= 150 °C (prior to surge) Tj=25°C

Fig 1. Non-repetitive peak reverse power dissipation

as a function of pulse duration; maximum

values

Fig 2. Forward current as a function of forward

voltage; typical values

BZT52H-B/C2V4 to BZT52H-B/C4V3

Tj=25°C to 150 °CBZT52H-B/C4V7 to BZT52H-B/C12

Tj=25°C to 150 °C

Fig 3. Temperature coefficient as a function of

working current; typica l values Fig 4. Temperature coefficient as a function of

working current; typical va lues

mbg801

103

1tp (ms)

PZSM

(W)

102

10−1

(1)

(2)

VF (V)

0.6 10.8

mbg781

100

200

300

(mA)

060

−2

−3

−1

mbg783

20 40 IZ (mA)

(mV/K) 4V3

3V9

3V6

3V0

2V4

2V7

3V3

02016

−5

mbg782

4812 IZ (mA)

(mV/K)

4V7

9V1

8V2

7V5

6V8 6V2

5V6

5V1

Product data sheet Rev. 3 — 7 December 2010 8 of 13

NXP Semiconductors BZT52H series

Single Zener diodes in a SOD123F package

8. Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in auto motive applications.

9. Package outline

10. Packing information

[1] For further information and the availability of packing methods, see Section 14.

Fig 5. Package outline SOD123F

04-11-29Dimensions in mm

1.2

1.0

0.25

0.10

3.6

3.4

2.7

2.5

0.55

0.35

0.70

0.55

1.7

1.5

Table 11. Packing methods

The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]

Type number Package Description Packing quantity

3000 10000

BZT52H-B2V4 to

BZT52H-C75 SOD123F 4 mm pitch, 8 mm tape and reel -115 -135

Product data sheet Rev. 3 — 7 December 2010 9 of 13

NXP Semiconductors BZT52H series

Single Zener diodes in a SOD123F package

11. Soldering

Reflow soldering is the only recommended soldering method.

Dimensions in mm.

Fig 6. Reflow soldering footprint SOD123F

1.6

2.9

4.4

1.1 1.22.1

1.1

(2×)

solder lands

solder resist

occupied area

solder paste

Product data sheet Rev. 3 — 7 December 2010 10 of 13

NXP Semiconductors BZT52H series

Single Zener diodes in a SOD123F package

12. Revision history

Table 12. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BZT52H_SER v.3 20101207 Product data sheet - BZT52H_SER v.2

Modifications: •Added selection B.

•Section 1.2 “Features and benefits”: amended.

•Table 2 “Pinning”: graphic symbol updated.

•Section 8 “Test information”: added.

•Section 13 “Legal information”: updated.

BZT52H_SER v.2 20091115 Product data sheet - BZT52H_SER v.1

BZT52H_SER v.1 20051222 Product data sheet - -

Product data sheet Rev. 3 — 7 December 2010 11 of 13

NXP Semiconductors BZT52H series

Single Zener diodes in a SOD123F package

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semicond uctors sales

office. In case of any inconsistency or conflict wit h the short data sheet, th e

full data sheet shall pre va il.

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data sheet shall define the specification of the product as agr eed between

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Notwithstanding any damages that customer might incur for any reason

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NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applicati ons or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

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customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

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products are sold subject to the general terms and conditions of commercial

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Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contain s data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 3 — 7 December 2010 12 of 13

NXP Semiconductors BZT52H series

Single Zener diodes in a SOD123F package

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respective ow ners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to : salesaddresses@nxp.com

NXP Semiconductors BZT52H series

Single Zener diodes in a SOD123F package

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 7 December 2010

Document identifier: BZT52H_SER

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 8

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

10 Packing information . . . . . . . . . . . . . . . . . . . . . 8

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

14 Contact information. . . . . . . . . . . . . . . . . . . . . 12

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13