2N6111 2N6109 2N6107
MAXIMUM RATINGS: (TC=25°C) SYMBOL 2N6288 2N6290 2N6292 UNITS
Collector-Base Voltage VCBO 40 60 80 V
Collector-Emitter Voltage VCEO 30 50 70 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 7.0 A
Peak Collector Current ICM 10 A
Continuous Base Current IB 3.0 A
Power Dissipation PD 40 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJC 3.13 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICEV VCE=Rated VCEO, VEB=1.5V 100 μA
ICEV VCE=Rated VCEO, VEB=1.5V, TC=150°C 2.0 mA
ICEO V
CE=20V (2N6111, 2N6288) 1.0 mA
ICEO V
CE=40V (2N6109, 2N6290) 1.0 mA
ICEO VCE=60V (2N6107, 2N6292) 1.0 mA
IEBO V
EB=5.0V 1.0 mA
BVCEO I
C=100mA (2N6111, 2N6288) 30 V
BVCEO I
C=100mA (2N6109, 2N6290) 50 V
BVCEO I
C=100mA (2N6107, 2N6292) 70 V
VCE(SAT) I
C=7.0A, IB=3.0A 3.5 V
VBE(ON) V
CE=4.0V, IC=7.0A 3.0 V
hFE V
CE=4.0V, IC=2.0A (2N6107, 2N6292) 30 150
hFE V
CE=4.0V, IC=2.5A (2N6109, 2N6290) 30 150
hFE V
CE=4.0V, IC=3.0A (2N6111, 2N6288) 30 150
hFE V
CE=4.0V, IC=7.0A 2.3
hfe V
CE=4.0V, IC=0.5A, f=50kHz 20
fT V
CE=4.0V, IC=0.5A, f=1.0MHz 4.0 MHz
Cob V
CB=10V, IE=0, f=1.0MHz 250 pF
2N6107 2N6109 2N6111 PNP
2N6288 2N6290 2N6292 NPN
COMPLEMENTARY
SILICON POWER TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6107, 2N6288
series types are complementary silicon power transistors,
manufactured by the epitaxial base process, designed
for general purpose power amplifier and switching
applications.
MARKING: FULL PART NUMBER
TO-220 CASE
R1 (10-April 2013)
www.centralsemi.com
2N6107 2N6109 2N6111 PNP
2N6288 2N6290 2N6292 NPN
COMPLEMENTARY
SILICON POWER TRANSISTORS
TO-220 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Collector
3) Emitter
Tab) Collector
MARKING:
FULL PART NUMBER
www.centralsemi.com
R1 (10-April 2013)
