TEMIC 2N7081 Siliconix N-Channel Enhancement-Mode Transistor Product Summary _Varpss() | mse @) | IA). 100 0.15 13 TO-257AB D Hermetic Package O oo Case Isolated s GDS Top View N-Channel MOSFET Absolute Maximum Ratings (Tc = 25C Unless Otherwise Noted) "Parameter Drain-Source Voltage Gate-Source Voltage Vos +20 Te = 25C 13 Continuous Drain Current (Ty = 150C) Ip Tec = 100C 8.0 A Puised Drain Current IpM 48 Te = 25C 50 Maximum Power Dissipation Pp Ww Te = 100C 20 Operating Junction and Storage Temperature Range Ty, Tstg 55 to 150 C Lead Temperature (3/35 from case for 10 sec.) Ti 300 Thermal Resistance Ratings Maximum Junction-to-Ambient Maximum Junction-to-Case Case-to-Sink P-36736Rev. C (05/30/94) 6-197 M8 42547395 0014383 2) N-/P-Channel MOSFETs2N7081 Specifications (Ty = 25C Unless Otherwise Noted) TEMIC Siliconix Parameter Symbol Test Condition Limit min | Typ* | Max Static Drain-Source Breakdown Voltage Vasrypss Vos = OV, Ip = 250 pA 100 Vv Gate Threshold Voltage Vascth) Vyps = Vas, Ip = 250 pA 2.0 4.0 Gate-Body Leakage Igss Vps = 0V, Ves = 20V +100 nA Vps = 80 V, Vag = 0V 25 Zero Gate Voltage Drain Current Ipss v mOUN, UT DSc 750 HA Ds = > GS = 5 4y= On-State Drain Current Ip(on) Vps = 10 V, Vgs = 10 V 13.0 A Vos = 10 V.Ip =8.0A 0.12 0.15 Drain-Source On-State Resistance (DS(on) - Q Veg = 10 V, Ip = 8.0A, Ty = 125C 0.22 0.27 Forward Transconductance? fs Vps = 15 V,Ip = 80A 4.0 5.0 s Fall Time* tt Dynami Input Capacitance Ciss 600 Output Capacitance Coss Vas = 0 V, Vps = 25 V, f = 1 MHz 190 pF Reverse Transfer Capacitance Crs 35 Total Gate Charge* Q; 17 30 Gate-Source Charge Qes Vos = 50V, Vas = 10 V, Ip = 13 A 6 9.0 nc Gate-Drain Charge Qea 9 20 Turn-On Delay Time tagon) 7 30 Rise Time* t Vpp = 50 V, Ry, = 3.82 45 80 Turn-Off Delay Time teat Ip 13 A, Vaen = 10V, Rg = 7.5 Q a rr 10 40 Continuous Current Is 13 A Pulsed Current Ism 48 Diode Forward Voltage Vsp Ip = 13 A, Vos = 0V 25 Vv Reverse Recovery Time ty . 100 300 ns Ip = 13 A, di/dt = 100 A/us Reverse Recovery Charge Qn 0.7 pec Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width = 300 ps, duty cycle < 2%. c. Independent of operating temperature. 6-198 MM 8254735 00183484 468 a P.36736Rev. C (05/30/94)TEMIC Siliconix Typical Characteristics (25C Unless Otherwise Noted) 10 Output Characteristics Vos =10V f/f 8V ov Y/ YY 8 | Aay < Y/ 6V 2 | seca E 6 4 a 3 oO &B 4 I a 5Vv 2 4V 0 0 04 08 1.2 16 2 Vps Drain-to-Source Voltage (V) Transconductance & : 3 2 3 d a ! A Lo) 0 5 10 Ip Drain Current (A) 15 Capacitance 1500 C Capacitance (pF) Crss Coss 0 10 20 Vps Drain-to-Source Voltage (V) P-36736-Rev. C (05/30/94) Me 6254735 0018385 774 30 20 40 25 50 Ip Drain Current (A) Tpson) On-Resistance (2) Vgs Gate-to-Source Voltage (V) 15 12 0.5 0.4 0.3 0.2 0.1 15.0 12.5 10.0 15 5.0 2.5 Transfer Characteristics 2N7081 T T T Tc = -55C 25C | 125C 0 3 6 6 9 Vas Gate-to-Source Voltage (V) On-Resistance ys. Drain Current 12 [tee 0 10 20 Ip Drain Current (A) 30 Gate Charge 0 4 8 12 16 20 Q; Total Gate Charge (nC) 50 24 6-199 N-/P-Channel MOSFETs2N7081 TEMIC Siliconix Typical Characteristics (25C Unless Otherwise Noted) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.25 200 2.00 100 Ty =25C e ~ 1.75 r 8 5 sos t 3 B 150 3 ae 8 Be 4. 2 10 1.25 83 t ge 1.00 0.75 0.50 0 -50 -10 30 70 110 150 9 1 2 3 4 5 Ty Junction Temperature (C) Vsp Source-to-Drain Voltage (V) Thermal Ratings 20 Maximum Drain Current vs. Case Temperature 100 Safe Operating Area = 5 E 12 & 6 6 e <q rs & 8 p a I oN I a a 4 N\ 0 0 25 50 75 100 125 150 1 10 100 Tc Case Temperature (C) Vps ~ Drain-to-Source Voltage (V) 2 Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Single Pulse 10-5 10-4 10-3 10-2 10-1 1 3 Square Wave Pulse Duration (sec) 6-200 P-36736Rev. C (05/30/94) MB 4254735 0014346 630