Hyperfast Diode 50 A, 600 V RHRG5060 Description The RHRG5060 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling/ clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. ANODE CATHODE Features * * * * * www.onsemi.com Hyperfast Recovery ( trr = 50 ns (@ IF = 50 A ) Max Forward Voltage( VF = 2.1 V (@ TC = 25 C ) 600 V Reverse Voltage and High Reliability Avalanche Energy Rated This Device is Pb-Free and is RoHS Compliant JEDEC STYLE TO-247 340CL MARKING DIAGRAM Applications * Switching Power Supplies * Power Switching Circuits * General Purpose $Y&Z&3&K RHRG5060 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 600 V Working Peak Reverse Voltage VRWM 600 V VR 600 V Average Rectified Forward Current (TC = 93 C) IF(AV) 50 A Repetitive Peak Surge Current (Square Wave, 20 kHz) IFRM 100 A Nonrepetitive Peak Surge Current (Halfwave 1 Phase, 60 Hz) IFSM 500 A PD 150 W EAVL 40 mJ TSTG, TJ -65 to +175 C DC Blocking Voltage Maximum Power Dissipation Avalanche Energy (See Figure 10 and Figure 11) Operating and Storage Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. (c) Semiconductor Components Industries, LLC, 2001 March, 2020 - Rev. 3 1 $Y &Z &3 &K RHRG5060 1. Cathode = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code 2. Anode ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Publication Order Number: RHRG5060/D RHRG5060 PACKAGE MARKING AND ORDERING INFORMATION Part Number Package Brand RHRG5060 TO-247-2L RHRG5060 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Parameter Symbol VF IR trr Test Conditions Min Typ Max Unit Instantaneous Forward Voltage (Pulse Width = 300 ms, Duty Cycle = 2%) IF = 50 A 2.1 V IF = 50 A, TC = 150C 1.7 V Instantaneous Reverse Current VR = 600 V 250 mA VR = 600 V TC = 150C 1.5 mA IF = 1 A, dlF/dt = 100 A/ms 45 ns IF = 50 A, dIF/dt = 100 A/ms 50 ns Reverse Recovery Time (See Figure 9 ) Summation of ta + tb ta Time to Reach Peak Reverse Current (See Figure 9) IF = 50 A, dIF/dt = 100 A/ms 25 ns tb Time from Peak IRM to Projected Zero Crossing of IRM Based on a Straight Line from Peak IRM Through 25% of IRM (See Figure 9) IF = 50 A, dIF/dt = 100 A/ms 20 ns Qrr Reverse Recovery Charge IF = 50 A, dIF/dt = 100 A/ms 65 nC CJ Junction Capacitance VR = 10 V, IF = 0 A 140 pF RqJC Thermal Resistance Junction to Case 1.0 C/W Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 RHRG5060 TYPICAL PERFORMANCE CURVES 300 3000 175oC IR, Reverse Current (mA) 1000 IF, Forward Current (A) 100 175oC 100oC 10 1 0 0.5 12 25oC 1.5 2.5 100 100oC 10 1 0.01 3 25oC 0.1 0 100 VF, Forward Voltage (V) 50 600 TC = 100oC, dIF/dt = 100A/ms 125 Trr t, Recovery Time (ns) t, Recovery Times (ns) 500 150 TC = 25oC, dIF/dt = 100A/ms 40 30 ta 20 tb 10 1 100 75 ta 50 tb 25 0 50 10 Trr 1 50 10 IF, Forward Current (A) IF, Forward Current (A) Figure 3. Trr, ta and tb Curves vs. Forward Current Figure 4. Trr, ta and tb Curves vs. Forward Current 50 TC = 175oC, dIF/dt = 100A/ms 200 Trr 150 100 ta 50 tb 1 10 50 IF(AV), Average Forward Current (A) 250 t, Recovery Times (ns) 400 Figure 2. Reverse Current vs. Reverse Voltage 60 0 300 VR, Reverse Voltage (V) Figure 1. Forward Current vs. Forward Voltage 0 200 40 DC SQ. WAVE 30 20 10 0 25 50 75 100 125 150 TC, Case Temperature (5C) IF, Forward Current (A) Figure 5. Trr, ta and tb Curves vs. Forward Current Figure 6. Current Derating Curve www.onsemi.com 3 175 RHRG5060 TYPICAL PERFORMANCE CURVES (continued) CJ, Junction Capacitance (pF) 350 300 250 200 150 100 50 0 0 50 100 150 200 VR, Reverse Voltage (V) Figure 7. Junction Capacitance vs. Reverse Voltage TEST CIRCUITS AND WAVEFORMS VGE AMPLITUDE AND RG CONTROL dlF/dt t1 AND t2 CONTROL IF L DUT RG CURRENT SENSE VGE dIF Trr dt ta 0 VDD - IGBT t1 IF + tb 0.25I RM IRM t2 Figure 8. Trr Test Circuit Figure 9. Trr Waveforms and Definitions I=1A L = 40 mH R < 0.1 W EAVL = 1/2LI2 [VR(AVL)/(VR(AVL)-VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L VAVL R CURRENT SENSE + VDD DUT - IL IL I V Q1 VDD t0 Figure 10. Avalanche Energy Test Circuit t1 t2 t Figure 11. Avalanche Current and Voltage Waveforms www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO-247-2LD CASE 340CL ISSUE A DATE 03 DEC 2019 GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX A Y WW ZZ = Specific Device Code = Assembly Location = Year = Work Week = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot "G", may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13850G TO-247-2LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. (c) Semiconductor Components Industries, LLC, 2018 www.onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800-282-9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 www.onsemi.com 1 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative