BSR316P
SIPMOS® Small-Signal-Transistor
Features
• P-Channel
• Enhancement mode / Logic level
• Avalanche rated
• Pb-free lead plating; RoHS compliant
• Footprint compatible to SOT23
• Qualified according to AEC Q101
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
IDTA=25 °C A
TA=70 °C
Pulsed drain current
ID,pulse TA=25 °C
Avalanche energy, single pulse
EAS ID=-0.36 A, RGS=25 WmJ
Gate source voltage
VGS V
Power dissipation
Ptot TC=25 °C W
Operating and storage temperature
Tj, Tstg °C
ESD class
JESD22-A114-HBM
Soldering temperature
IEC climatic category; DIN IEC 68-1
55/150/56
-55 ... 150
±20
260 °C
1A (250V to 500V)
-0.36
-0.29
0.5
Value
25
-1.44
steady state
VDS
-100
V
RDS(on),max
1.8
W
-0.36
A
Product Summary
Type
Package
Tape and Reel Information
Marking
Lead free
Packing
BSR316P
PG-SC59
L6327 = 3000 pcs. / reel
LC
Yes
Non dry
PG-SC59
Rev 1.05 page 1 2009-02-16
BSR316P
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - ambient
RthJA
minimal footprint,
steady state
- - 250 K/W
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V(BR)DSS VGS=0 V, ID=-250 µA - - -100 V
Gate threshold voltage
VGS(th) VDS=VGS, ID=-170 µA -2 -1.5 -1
Zero gate voltage drain current
IDSS
VDS=-100 V, VGS=0 V,
Tj=25 °C
- -0.1 -1 µA
VDS=-100 V, VGS=0 V,
Tj=150 °C
- -10 -100
Gate-source leakage current
IGSS VGS=-20 V, VDS=0 V - -10 -100 nA
Drain-source on-state resistance
RDS(on) VGS=-4.5 V,
ID=-0.33 A -1.8 2.2 W
VGS=-10 V,
ID=-0.36 A -1.3 1.8
Transconductance
gfs
|VDS|>2|ID|RDS(on)max,
ID=-0.29 A
0.3 0.5 - S
Values
Rev 1.05 page 2 2009-02-16
BSR316P
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance
Ciss -124 165 pF
Output capacitance
Coss -25 33
Reverse transfer capacitance
Crss -13 20
Turn-on delay time
td(on) - 5 8 ns
Rise time
tr- 6 9
Turn-off delay time
td(off) -71 106
Fall time
tf-26 39
Gate Charge Characteristics2)
Gate to source charge
Qgs -0.3 0.4 nC
Gate to drain charge
Qgd -1.6 2.4
Gate charge total
Qg-5.3 7.0
Gate plateau voltage
Vplateau - -2.7 - V
Reverse Diode
Diode continuous forward current IS- - -0.36 A
Diode pulse current
IS,pulse - - -1.44
Diode forward voltage
VSD
VGS=0 V, IF=0.36 A,
Tj=25 °C
- -0.8 -1.1 V
Reverse recovery time
trr -40.6 -ns
Reverse recovery charge
Qrr -46.4 -nC
2) See figure 16 for gate charge parameter definition
TC=25 °C
Values
VGS=0 V, VDS=-25 V,
f=1 MHz
VDD=-50 V,
VGS=-10 V,
ID=-0.36 A, RG=6 W
VDD=-80 V,
ID=-0.36 A, VGS=0 to -
10 V
VR=-50 V, IF=|IS|,
diF/dt=100 A/µs
Rev 1.05 page 3 2009-02-16
BSR316P
1 Power dissipation 2 Drain current
Ptot=f(TC)ID=f(TC); |VGS|≥10 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TC=25 °C; D=0 ZthJC=f(tp)
parameter: tpparameter: D=tp/T
100 µs
1 ms
10 ms
100 ms
DC
10-1
100
101
102
103
10-3
10-2
10-1
100
101
-ID [A]
-VDS [V]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10-5
10-4
10-3
10-2
10-1
100
101
10-1
100
101
102
103
ZthJS [K/W]
tp [s]
0
0.1
0.2
0.3
0.4
0.5
0.6
0 40 80 120 160
Ptot [W]
TA [°C]
0
0.1
0.2
0.3
0.4
0 40 80 120 160
-ID [A]
TA [°C]
Rev 1.05 page 4 2009-02-16
BSR316P
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
parameter: Tj
-3 V
-3.2 V
-3.5 V
-4 V
-4.5 V
-5 V
-7 V
-10 V
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
0 0.4 0.8 1.2 1.6
RDS(on) [W]
-ID [A]
25 °C
150 °C
0
0.2
0.4
0.6
0.8
1
0 1 2 3 4 5
-ID [A]
-VGS [V]
0
0.2
0.4
0.6
0.8
1
0.0 0.2 0.4 0.6
gfs [S]
-ID [A]
-2.5 V
-3 V
-3.5 V
-4 V
4.5 V
6 V
7 V
10 V
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0 1 2 3 4
ID [A]
-VDS [V]
Rev 1.05 page 5 2009-02-16
BSR316P
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=-0.36 A; VGS=-10 V VGS(th)=f(Tj); VGS=VDS; ID=-170 µA
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD)
parameter: Tj
typ.
98 %
0.5
1
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140
RDS(on) [W]
Tj [°C]
Ciss
Coss
Crss
101
102
103
0 20 40 60 80 100
C [pF]
-VDS [V]
typ
2 %
98 %
0
0.5
1
1.5
2
2.5
-60 -20 20 60 100 140
-VGS(th) [V]
Tj [°C]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
10-2
10-1
100
101
0 0.4 0.8 1.2 1.6
IF [A]
-VSD [V]
Rev 1.05 page 6 2009-02-16
BSR316P
Package Outline
SC-59: Outline
Footprint
Packaging
Tape
Dimensions in mm
Rev 1.05 page 7 2009-02-16
BSR316P
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 WVGS=f(Qgate); ID=-0.36 A pulsed
parameter: Tj(start) parameter: VDD
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=-250 µA
90
95
100
105
110
115
120
-60 -20 20 60 100 140
-VBR(DSS) [V]
Tj [°C]
VGS
Qgate
Vgs(th)
Qg(th)
Qgs
Qgd
Qsw
Qg
25 °C
100 °C
125 °C
100
101
102
103
10-2
10-1
100
-IAV [A]
tAV [µs]
20 V
50 V
80 V
0
1
2
3
4
5
6
7
8
9
10
0 2 4 6
-VGS [V]
-Qgate [nC]
Rev 1.05 page 8 2009-02-16
BSR316P
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support and/or
maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the
user or other persons may be endangered.
Rev 1.05 page 9 2009-02-16