A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subjec t to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIO NS MINIMUM TYPICAL MAXIMUM UNITS
BVCES IC = 100 mA 60 V
BVCEO IC = 50 mA 33 V
BVEBO IE = 10 mA 3.5 V
hFE VCE = 5.0 V IC = 1.0 A 10 ---
GP
IMD
η
ηη
ηC
VSWR
VCE = 28 V POUT = 175 W(PEP) f = 30 MHz
PIN = 7.0 W
14
65
-32
30:1
dB
dBc
%
---
NPN SILICON RF POWER TRANSISTOR
S175-28
DESCRIPTION:
The ASI S175-28 is a 28 V high power
transistor designed for linear HF applicat ions.
The device utilizes emitter ballastiong for
ruggedness.
FEATURES:
• PG = 14 dB min. at 175 W/30 MHz
• IMD = -32 dBc max. at 175 W(PEP)
• Omnigold™ Metalization System
• Common Emit t e r configuration
MAXIMUM RATINGS
IC 30 A
VCES 60 V
VEBO 3.5 V
PDISS 320 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θ
θθ
θJC 0.55 °C/W
PACKAGE STYLE .500 4L FLG
MINIMUM
inches / mm
.220 / 5.59
.720 / 18.28
.125 / 3.18
.245 / 6.22
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
.255 / 6.48
.980 / 24.89
.7.30 / 18.54
inches / mm
.230 / 5.84
H.003 / 0.08 .007 / 0.18
DIM
K
L
I
J
.090 / 2.29
.150 / 3.81
.980 / 24.89
.110 / 2.79
.175 / 4.45
1.050 / 26.67
H
IK
J
.112x45°
FULL R
C
E
B
G
D F
AL
Ø.125 NOM.
.125 / 3.18
.495 / 12.57 .505 / 12.83
.280 / 7.11
E
C
E
B
